Hydrostatic instabilities in floating zone cristal growth process

If only Fluid Mechanics aspects are considered, the configuration appearing in the floating zone technique for crystal growth can be modelled as a mass of liquid spanning between two solid rods. Besides, if now the influence of temperature gradients and heat flow are not considered, the simplest fluid model consists of an isothermal liquid mass of constant properties (density and surface tension) held by capillary forces between two solid disks placed a distance L apart: the so called liquid bridge. As it is well known, if both supporting disks were parallel, coaxial and of the same diameter, 2R, the volume of liquid, V, were equal to that of a cylinder of the same L and R (V=KR~L) and no body forces were acting on the liquid column, the fluid configuration (under these conditions of cylindrical shape) will become unstable when the distance between the disks equals the length of the circumference of the supporting disks (L=2KR, the so-called Rayleigh stability limit). One should be aware that the Rayleigh stability limit can be dramatically modified when the geometry differs from the above described cylinder (due to having non-coaxial disks, different diameter disks, liquid volume different from the cylindrical one, etc) or when other external effects like accelerations either axial or lateral are considered. In this paper the stability limits of liquid bridges considering different types of perturbations are reviewed.

About the origin of low wafer performance and crystal defect generation on seed-cast growth of industrial mono-like silicon ingots

The era of the seed-cast grown monocrystalline-based silicon ingots is coming. Mono-like, pseudomono or quasimono wafers are product labels that can be nowadays found in the market, as a critical innovation for the photovoltaic industry. They integrate some of the most favorable features of the conventional silicon substrates for solar cells, so far, such as the high solar cell efficiency offered by the monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost, high productivity and full square-shape that characterize the well-known multicrystalline casting growth method. Nevertheless, this innovative crystal growth approach still faces a number of mass scale problems that need to be resolved, in order to gain a deep, 100% reliable and worldwide market: (i) extended defects formation during the growth process; (ii) optimization of the seed recycling; and (iii) parts of the ingots giving low solar cells performance, which directly affect the production costs and yield of this approach. Therefore, this paper presents a series of casting crystal growth experiments and characterization studies from ingots, wafers and cells manufactured in an industrial approach, showing the main sources of crystal defect formation, impurity enrichment and potential consequences at solar cell level. The previously mentioned technological drawbacks are directly addressed, proposing industrial actions to pave the way of this new wafer technology to high efficiency solar cells.

Discrete (MD) and continuum (DD) simulations of void growth in single crystals.

Void growth in ductile materials is an important problem from the fundamental and technological viewpoint. Most of the models developed to quantify and understand the void growth process did not take into account two important factors: the anisotropic nature of plastic flow in single crystals and the size effects that appear when plastic flow is confined into very small regions.

Fluid-physics-module experiments

Some floating-liquid-zone experiments performed under reduced-gravity conditions are reviewed. Several types of instabilities are discussed, together with the relevant parameters controlling them. It is shown that the bounding values of these parameters could be increased, by orders of magnitude in several instances, by selecting appropriate liquids. Two of the many problems that a Fluid-Physics Module, devised to perform experiments on floating zones in a space laboratory, would involve are discussed: namely (i) procedures for disturbing the zoneunder controlled conditions, and (ii) visualisation of the inner flow pattern. Several topics connected with the nonisothermal nature and the phase-changes of floating zones are presented. In particular, a mode of propagation through the liquid zone for disturbances which could appear in the melting solid/liquid interface is suggested. Although most research on floating liquid zones is aimed at improving the crystal-growth process, some additional applications are suggested.

Ciudades intermedias latinoamericanas ante modelos urbanos externos

En su proceso de crecimiento, las ciudades de América Latina y el Caribe (ALC) han tenido una vinculación histórica con la dinámica de implementación de herramientas, metodologías y proyectos urbanos, gestados en otros contextos, especialmente desde Europa (UE) y Estados Unidos (EE.UU). Desde la época colonial hasta hoy, la mayor parte de las ciudades de ALC han experimentado diversos tipos de influencia urbana externa, que han dejado huellas tangibles. Esta influencia ha ido variando a través de los años, desde la implantación directa de un modelo urbano, propia de la época colonial; hasta la importación de modelos urbanos total o parcialmente, de manera autónoma y ajena al origen de este. Actualmente, en ALC se han generado diversas iniciativas para abordar las necesidades urbanas desde sus especificidades, pero los instrumentos y proyectos vanguardistas utilizados en países desarrollados, siguen teniendo mayor fuerza de atracción y diseminación que las iniciativas vecinas. Se observa que las ciudades intermedias, que crecen con mayor velocidad que las grandes ciudades, también participan activamente en este proceso, aunque con otras limitaciones y condicionantes, diferentes a las encontradas en las grandes ciudades de la Región. ¿Por qué se produce esta dinámica?, ¿quiénes participan?, ¿cuáles son sus procesos?, ¿responden a las necesidades del complejo y diverso contexto urbano latinoamericano? Las Ciudades Intermedias Latinoamericanas ante los Modelos Urbanos Externos, es una investigación que aborda la dinámica de implementación de modelos de desarrollo urbanos1 exógenos, en ciudades emergentes que, en su proceso de crecimiento, tienden a repetir patrones de las grandes ciudades, y que en sí mismas, representan una oportunidad ante los desequilibrios territoriales de ALC. Esta dinámica, ha sido abordada por investigadores de diversas disciplinas, cuyos puntos de vista en muchas ocasiones no coinciden, pero revelan que estamos frente a una discusión de larga data, entre las visiones modernistas y las visiones identitarias de la historia urbana de ALC. Por ello, el trabajo recoge la evolución de los procesos de toma de decisiones, desarrollados bajo un efecto cascada (Global, Internacional, Regional, Nacional, Subnacional, Local), donde actualmente el nivel Local asciende a espacios del nivel Regional (ALC) e Internacional; pasando de meros receptores de políticas generadas en un plano superior derivadas de las relaciones geopolíticas y geoeconómicas de escala mundial; a ser sujetos proactivos del desarrollo de sus territorios. Para observar la concatenación de este proceso macro-disciplinar-micro (grosso modo), se plantea una herramienta metodológica de triangulación, desde la que se pueda visualizar el contexto en el que se produce la dinámica y como éste la condiciona. Con dicha metodología se abordará ALC como caso de estudio general, haciendo una aproximación al detalle en dos casos particulares: Ciudad Guayana (República Bolivariana de Venezuela) y Santiago de los Caballeros (República Dominicana). Estos casos, sumados a las observaciones de actores vinculados a la dinámica de transferencia de modelos urbanos, coadyuvarán en este esfuerzo de aproximación, para definir con más claridad un proceso que se incrementa y complejiza, en medio de la denominada “era de las ciudades”. ABSTRACT In its growth process, the cities of Latin America and the Caribbean (LAC) have had a historical link with the dynamics of implementation tools and engendered in other contexts, especially from Europe (EU) and the US methodologies (USA). From colonial times until today, most LAC cities have experienced various types of external urban influence that have left tangible traces. This influence has varied over the years, since the introduction of direct, typical of the colonial era; to import all or part independently and outside the origin of this urban model. Currently, in LAC they have generated various initiatives to address urban needs from its specificities, but notes that the instruments used in cutting-edge projects and developed countries, are still more attractive force and spread to neighboring initiatives. It is observed that the intermediate cities, which grow faster than big cities are also actively involved in this process, although with different constraints and other limitations to the big cities of the region. Why this dynamic occurs?, Who ?, which involved processes are ?, respond to the needs of complex and diverse Latin American urban context? Intermediate Latin American cities to external urban models, is a research that addresses the dynamics of exogenous implementation of urban development models in emerging cities in their growth process, they tend to repeat patterns of large cities, and represent a shot at LAC regional imbalances. This dynamic has been addressed by researchers from various disciplines, whose views often do not match, but show that we are facing a long-standing debate between modernists and identity visions on urban history of ALC. Therefore, the work shows the evolution of the processes of decision making, developed under a (global, international, regional, national, subnational, local) cascade effect, which currently stands at the Local level Regional level spaces (ALC) and International, from mere recipients of policies generated on a higher plane derived from the geopolitical and geo-economic relations worldwide; to be proactive in the development of their territories subject. To observe this process concatenation macro-micro-discipline (roughly), a triangulation methodology tool, from which it can view the context in which the dynamic occurs and how it affects what arises. ALC will address her as if general study, making an approach to detail two particular cases: Ciudad Guayana (Bolivarian Republic of Venezuela) and Santiago de los Caballeros (Dominican Republic). These cases, together with the comments of stakeholders involved in the dynamics of transfer of urban models, will assist in this effort approach to define more clearly a process that increases and more complex, amid the so-called "era of the cities".

Sustainable Planning And Land Valuation, New Forms Of Suburban Growth In Areas Of The Spanish Mediterranean Coast

The present study analyzes residential models in coastal areas with large influxes of tourism, the sustainability of their planning and its repercussion on urban values. The project seeks to establish a methodology for territorial valuation through the analysis of externalities that have influenced urban growth and its impact on the formation of residential real estate values. This will make it possible to create a map for qualitative land valuation, resulting from a combination of environmental, landscape, social and productive valuations. This in turn will establish a reference value for each of the areas in question, as well as their spatial interrelations. These values become guidelines for the study of different territorial scenarios, which help improve the sustainable territorial planning process. This is a rating scale for urban planning. The results allow us to establish how the specific characteristics of the coast are valued and how they can be incorporated into sustainable development policies.

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a-plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c-plane

E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods

E-beam lithography was used to pattern a titanium mask on a GaN substrate with ordered arrays of nanoholes. This patterned mask served as a template for the subsequent ordered growth of GaN/InGaN nanorods by plasma-assisted molecular beam epitaxy. The mask patterning process was optimized for several holes configurations. The smallest holes were 30 nm in diameter with a pitch (center-to-center distance) of 100 nm only. High quality masks of several geometries were obtained that could be used to grow ordered GaN/InGaN nanorods with full selectivity (growth localized inside the nanoholes only) over areas of hundreds of microns. Although some parasitic InGaN growth occurred between the nanorods during the In incorporation, transmission electron microscopy and photoluminescence measurements demonstrated that these ordered nanorods exhibit high crystal quality and reproducible optical properties.

Foreigner? Want to study in Spain? The integration process at universities

The student exchange programs being carried out at universities for over 50 years, have led to changes in the institutions, which had to adapt to accommodate these students. Despite those changes, the integration of foreign students not coming from the aforementioned exchange programs that come to our country to study at the University has been neglected. These students face many barriers (language, cultural and origin customs mainly), so a clear and detailed information would be highly desirable in order to facilitate the necessary arrangements This study aims to show the deficiencies in the integration process and hosting programs faced by a foreign student at University. The study is performed by means of an analysis of statistical data from the Polytechnic University of Madrid and the Civil Engineering School over the last 12 school years (1999 - 2000 to 2010 - 2011), as well as surveys and interviews with some of these students. The study is enhanced with the analysis of the measures and integration methods of the various minorities, which had been implemented by the foremost public universities in Spain, as well as other public and private universities abroad. It illustrates the existing backlog at the Spanish universities with regards to supporting the integration of diversity among foreign students, providing data concerning the growth of such population and its impact at the university, and on the institutions in particular. In an increasingly globalized world, we must understand and facilitate the integration of minorities at University, supplying them, from the first day, and before the enrollment process, the essential elements that will allow their adequate adaptation to the educational process at University. It concludes by identifying the main subjects that need to be tackled to endorse such integration.

On track for solar grade silicon through a siemens process-type laboratory reactor: operating conditions and energy savings

Polysilicon cost impacts significantly on the photovoltaics (PV) cost and on the energy payback time. Nowadays, the besetting production process is the so called Siemens process, polysilicon deposition by chemical vapor deposition (CVD) from Trichlorosilane. Polysilicon purification level for PV is to a certain extent less demanding that for microelectronics. At the Instituto de Energía Solar (IES) research on this subject is performed through a Siemens process-type laboratory reactor. Through the laboratory CVD prototype at the IES laboratories, valuable information about the phenomena involved in the polysilicon deposition process and the operating conditions is obtained. Polysilicon deposition by CVD is a complex process due to the big number of parameters involved. A study on the influence of temperature and inlet gas mixture composition on the polysilicon deposition growth rate, based on experimental experience, is shown. Moreover, CVD process accounts for the largest contribution to the energy consumption of the polysilicon production. In addition, radiation phenomenon is the major responsible for low energetic efficiency of the whole process. This work presents a model of radiation heat loss, and the theoretical calculations are confirmed experimentally through a prototype reactor at our disposal, yielding a valuable know-how for energy consumption reduction at industrial Siemens reactors.

A model of the spatially dependent mechanical properties of the axon during its growth

Neuronal growth is a complex process involving many intra- and extracellular mechanisms which are collaborating conjointly to participate to the development of the nervous system. More particularly, the early neocortical development involves the creation of a multilayered structure constituted by neuronal growth (driven by axonal or dendritic guidance cues) as well as cell migration. The underlying mechanisms of such structural lamination not only implies important biochemical changes at the intracellular level through axonal microtubule (de)polymerization and growth cone advance, but also through the directly dependent stress/stretch coupling mechanisms driving them. Efforts have recently focused on modeling approaches aimed at accounting for the effect of mechanical tension or compression on the axonal growth and subsequent soma migration. However, the reciprocal influence of the biochemical structural evolution on the mechanical properties has been mostly disregarded. We thus propose a new model aimed at providing the spatially dependent mechanical properties of the axon during its growth. Our in-house finite difference solver Neurite is used to describe the guanosine triphosphate (GTP) transport through the axon, its dephosphorylation in guanosine diphosphate (GDP), and thus the microtubules polymerization. The model is calibrated against experimental results and the tensile and bending mechanical stiffnesses are ultimately inferred from the spatially dependent microtubule occupancy. Such additional information is believed to be of drastic relevance in the growth cone vicinity, where biomechanical mechanisms are driving axonal growth and pathfinding. More specifically, the confirmation of a lower stiffness in the distal axon ultimately participates in explaining the controversy associated to the tensile role of the growth cone.

Mechanical characterization of GdBCO/Ag and YBCO single grains fabricated by top-seeded melt growth at 77 and 300 K

YBaCuO and GdBaCuO + 15 wt% Ag large, single-grain, bulk superconductors have been fabricated via the top-seeded, melt-growth (TSMG) process using a generic NdBCO seed. The mechanical behavior of both materials has been investigated by means of three-point bending (TPB) and transversal tensile tests at 77 and 300 K. The strength, fracture toughness and hardness of the samples were studied for two directions of applied load to obtain comprehensive information about the effect of microstructural anisotropy on the macroscopic and microscopic mechanical properties of these technologically important materials. Splitting (Brazilian) tests were carried out on as-melt-processed cylindrical samples following a standard oxygenation process and with the load applied parallel to the growth-facet lines characteristic of the TSMG process. In addition, the elastic modulus of each material was measured by three different techniques and related to the microstructure of each sample using optical microscopy. The results show that both the mechanical properties and the elastic modulus of both YBCO and GdBCP/Ag are improved at 77 K. However, the GdBCO/Ag samples are less anisotropic and exhibit better mechanical behavior due to the presence of silver particles in the bulk, superconducting matrix. The splitting tensile strength was determined at 77 K and both materials were found to exhibit similar behavior, independently of their differences in microstructure.

Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.