Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates has been characterized. We analyzed the variation of the surface potential (ΔVsp/ΔpH) and current (ΔIds/ΔpH) with solution pH in devices with the same indium content (17%, in-plane lattice-matched to GaN) and different AlInN thickness (6 nm and 10 nm), and compared with the literature. The shrinkage of the barrier, that has the effect to increase the transconductance of the device, makes the 2-dimensional electron density (2DEG) at the interface very sensitive to changes in the surface. Although the surface potential sensitivity to pH is similar in the two devices, the current change with pH (ΔIds/ΔpH), when biasing the ISFET by a Ag/AgCl reference electrode, is almost 50% higher in the device with 6 nm AlInN barrier, compared to the device with 10 nm barrier. When measuring the current response (ΔIds/ΔpH) without reference electrode, the device with thinner AlInN layer has a larger response than the thicker one, of a factor of 140%, and that current response without reference electrode is only 22% lower than its maximum response obtained using reference electrode.

Reduction of front-metallization grid shading in concentrator cells through laser micro-grooved cover glass

Concentrator solar cell front-grid metallizations are designed so that the trade-off between series resistance and shading factor (SF) is optimized for a particular irradiance. High concentrator photovoltaics (CPV) typically requires a metallic electrode pattern that covers up to 10% of the cell surface. The shading effect produced by this front electrode results in a significant reduction in short-circuit current (I SC) and hence, in a significant efficiency loss. In this work we present a cover glass (originally meant to protect the cell surface) that is laser-grooved with a micrometric pattern that redirects the incident solar light towards interfinger regions and away from the metallic electrodes, where they would be wasted in terms of photovoltaic generation. Quantum efficiency (QE) and current (I)-voltage (V) characterization under concentration validate the proof-of-concept, showing great potential for CPV applications