2 resultados para Flux growth

em Universidad Politécnica de Madrid


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The laminar low Mach number flow of a gas in a tube is analyzed for very small and very large values of the inlet-to-wall temperature ratio. When this ratio tends to zero, pressure forces confine the cold gas to a thin core around the axis of the tube. This core is neatly bounded by an ablation front that consumes it at a finite distance from the tube inlet. When the temperature ratio tends to infinity, the temperature of the gas increases smoothly from the wall to the axis of the tube and the shear stress and heat flux are positive at the wall despite the fact that the viscosity and thermal conductivity of the gas scaled with their inlet values tend to zero at the wall.

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The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth conditions may lead to selective growth but not be suitable for subsequent vertical growth. With optimized conditions, ordered GaN nanocolumns can be grown with a wide variety of diameters. In this work, ordered GaN nanocolumns with diameter as small as 50 nm are shown.