Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

Analysis of the Fracture of Reinforced Concrete Flat Elements Subjected to Explosions. Experimental Procedure and Numerical Validation

Many of the material models most frequently used for the numerical simulation of the behavior of concrete when subjected to high strain rates have been originally developed for the simulation of ballistic impact. Therefore, they are plasticity-based models in which the compressive behavior is modeled in a complex way, while their tensile failure criterion is of a rather simpler nature. As concrete elements usually fail in tensión when subjected to blast loading, available concrete material models for high strain rates may not represent accurately their real behavior. In this research work an experimental program of reinforced concrete fíat elements subjected to blast load is presented. Altogether four detonation tests are conducted, in which 12 slabs of two different concrete types are subjected to the same blast load. The results of the experimental program are then used for the development and adjustment of numerical tools needed in the modeling of concrete elements subjected to blast.

Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology

The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.

Ultra high frequency thin film saw devices

Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.

High precision pressure sensors based on SAW devices in the GHz range

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated.

Experimental study on the effective width of flat slab structures under dynamic seismic loading

This paper investigates the effective width of reinforced concrete flat slab structures subjected to seismic loading on the basis of dynamic shaking table tests. The study is focussed on the behavior of corner slab? column connections with structural steel I- or channel-shaped sections (shearheads) as shear punching reinforcement. To this end, a 1/2 scale test model consisting of a flat slab supported on four box-type steel columns was subjected to several seismic simulations of increasing intensity. It is found from the test results that the effective width tends to increase with the intensity of the seismic simulation, and this increase is limited by the degradation of adherence between reinforcing steel and concrete induced by the strain reversals caused by the earthquake. Also, significant differences are found between the effective width obtained from the tests and the values predicted by formula proposed in the literature. These differences are attributed to the stiffening effect provided by the steel profiles that constitute the punching shear reinforcement.

Simulation of wind farms in flat and complex terrain using CFD

Use of computational fluid dynamic (CFD) methods to predict the power production from wind entire wind farms in flat and complex terrain is presented in this paper. Two full 3D Navier–Stokes solvers for incompressible flow are employed that incorporate the k–ε and k–ω turbulence models respectively. The wind turbines (W/Ts) are modelled as momentum absorbers by means of their thrust coefficient using the actuator disk approach. The WT thrust is estimated using the wind speed one diameter upstream of the rotor at hub height. An alternative method that employs an induction-factor based concept is also tested. This method features the advantage of not utilizing the wind speed at a specific distance from the rotor disk, which is a doubtful approximation when a W/T is located in the wake of another and/or the terrain is complex. To account for the underestimation of the near wake deficit, a correction is introduced to the turbulence model. The turbulence time scale is bounded using the general “realizability” constraint for the turbulent velocities. Application is made on two wind farms, a five-machine one located in flat terrain and another 43-machine one located in complex terrain. In the flat terrain case, the combination of the induction factor method along with the turbulence correction provides satisfactory results. In the complex terrain case, there are some significant discrepancies with the measurements, which are discussed. In this case, the induction factor method does not provide satisfactory results.

Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.

Super-high-frequency SAW resonators on AlN/Diamond

This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10–14 GHz range with up to 36 dB out-of-band rejection.

Wide-angle, high-concentration photovoltaics to compete with flat plate systems

A novel photovoltaic concentrator enables highly uniform irradiance on a small number of efficient solar cells. The maximum electrical power of a photovoltaic (PV) energy installation depends on three factors: the available irradiance, the size of the systems collecting sunlight, and the rate at which the device transforms light into electricity (the conversion efficiency). Developers can maximize the irradiance by carefully selecting the site and orientation of the solar facility. But they can only expand their sunlight collection systems for standard flat plate PV devices by increasing the number of solar cells, at greater cost. Here, we consider the advantages of an alternative PV system that produces more energy without increasing the number of cells used (actually, reducing it), by improving the conversion rates.We also present a new device that may enhance the commercial viability of such technologies.

Moment transfer and influence of transverse beams in interior waffle flat plate-column connections under lateral loading

This paper addresses two aspects of the behavior of interior reinforced concrete waffle flat plate?column connections under lateral loads: the share of the unbalanced moment between flexure and excentric shear, and the effect of the transverse beams. A non-linear finite element model (benchmark model) was developed and calibrated with the results of quasi-static cyclic tests conducted on a 3/5 scale specimen. First, from this numerical model, the portion cv of the unbalanced moment transferred by the excentricity of shear about the centroid of the critical sections defined by Eurocode 2 (EC-2) and by ACI 318-11 was calculated and compared with the share-out prescribed by these codes. It is found that while the critical section of EC-2 is consistent with the cv provided by this code, in the case of ACI 318-11, the value assigned to cv is far below (about 50% smaller) the actual one obtained with the numerical simulations. Second, from the benchmark model, seven additional models were developed by varying the depth D of the transverse beam over the thickness h of the plate. It was found that the ductility of the connection and the effective width of the plate can respectively be increased up to 50% and 10% by raising D/h to 2 and 1.5.

A generalized method for flat plates impact detection and location

In the last years, many analyses from acoustic signal processing have been used for different applications. In most cases, these sensor systems are based on the determination of times of flight for signals from every transducer. This paper presents a flat plate generalization method for impact detection and location over linear links or bars-based structures. The use of three piezoelectric sensors allow to achieve the position and impact time while the use of additional sensors lets cover a larger area of detection and avoid wrong timing difference measurements. An experimental setup and some experimental results are briefly presented.

Influence of an upstream building on the wind-induced mean suction on the flat roof of a low-rise building

The effect of an upstream building on the suction forces on the flat roof of a low-rise building placed in the wake of the former is analyzed. The analysis has been performed by wind tunnel testing of a flat roof, low-rise building model equipped with pressure taps on the roof and different block-type buildings (only configurations where the upstream building is as high or higher than the downstream one are considered in this paper). The influence of the distance between both buildings on the wind loads on the downstream building roof is analyzed, as well as the height of the upstream one and the wind angle of incidence. Experimental results reveal that the wind load increases as the relative height of the upstream building increases, the wind load being highest for intermediate distances between buildings, when a passage between them is formed.

Plano Horizontal Plano. Del plano horizontal como límite entre lo estereotómico y lo tectónico = Flat Horizontal Plane. On Horizon

Plano Horizontal Plano. Del plano horizontal como límite entre lo estereotómico y lo tectónico