5 resultados para Ferroelectric memories

em Universidad Politécnica de Madrid


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Large scale high yield cadmium sulfide (CdS) nanowires with uniform diameter were synthesized using a rapid and simple solvo-chemical and hydrothermal route assisted by the surfactant cetyltrimethylammonium bromide (CTAB). Unique CdS nanowires of different morphologies could be selectively produced by only varying the concentration of CTAB in the reaction system with cadmium acetate, sulfur powder and ethylenediamine. We obtained CdS nanowires with diameters of 64–65 nm and lengths of up to several micrometers. A comparative study of the optical properties of ferroelectric liquid crystal (FLC) Felix-017/100 doped with 1% of CdS nanowires was performed. Response times of the order of from 160 to 180 μs, rotational viscosities of the order of from 5000 to 3000 mN s m−2 and polarizations of the order of from 10 to 70 nC cm−2 were measured. We also observed an anti-ferroelectric to ferroelectric transition for CdS doped FLC instead of the ferroelectric to paraelectric transition for pure FLC.

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A simple and scalable chemical approach has been proposed for the generation of 1-dimensional nanostructures of two most important inorganic materials such as zinc oxide and cadmium sulfide. By controlling the growth habit of the nanostructures with manipulated reaction conditions, the diameter and uniformity of the nanowires/nanorods were tailored. We studied extensively optical behavior and structural growth of CdS NWs and ZnO NRs doped ferroelectric liquid crystal Felix-017/100. Due to doping band gap has been changed and several blue shifts occurred in photoluminescence spectra because of nanoconfinement effect and mobility of charges.

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Modern Field Programmable Gate Arrays (FPGAs) are power packed with features to facilitate designers. Availability of features like huge block memory (BRAM), Digital Signal Processing (DSP) cores, embedded CPU makes the design strategy of FPGAs quite different from ASICs. FPGA are also widely used in security-critical application where protection against known attacks is of prime importance. We focus ourselves on physical attacks which target physical implementations. To design countermeasures against such attacks, the strategy for FPGA designers should also be different from that in ASIC. The available features should be exploited to design compact and strong countermeasures. In this paper, we propose methods to exploit the BRAMs in FPGAs for designing compact countermeasures. BRAM can be used to optimize intrinsic countermeasures like masking and dual-rail logic, which otherwise have significant overhead (at least 2X). The optimizations are applied on a real AES-128 co-processor and tested for area overhead and resistance on Xilinx Virtex-5 chips. The presented masking countermeasure has an overhead of only 16% when applied on AES. Moreover Dual-rail Precharge Logic (DPL) countermeasure has been optimized to pack the whole sequential part in the BRAM, hence enhancing the security. Proper robustness evaluations are conducted to analyze the optimization for area and security.

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This paper describes the dielectrophoretic potential created by the evanescent electric field acting on a particle near a photovoltaic crystal surface depending on the crystal cut. This electric field is obtained from the steady state solution of the Kukhtarev equations for the photovoltaic effect, where the diffusion term has been disregarded. First, the space charge field generated by a small, square, light spot where d _ l (being d a side of the square and l the crystal thickness) is studied. The surface charge density generated in both geometries is calculated and compared as their relation determines the different properties of the dielectrophoretic potential for both cuts. The shape of the dielectrophoretic potential is obtained and compared for several distances to the sample. Afterwards other light patterns are studied by the superposition of square spots, and the resulting trapping profiles are analysed. Finally the surface charge densities and trapping profiles for different d/l relations are studied.

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Allergies and food intolerances are at the forefront of institutional interest (European Regulation No 1169/2011) for their impact on consumer health. Allergies to peanuts and other nuts and gluten intolerance, makes production processes involving mixtures of powders a great concern for the industry, given the need to indicate the existence of traces of any of them. The food industry requires non-destructive and non-invasive methods of quantification that meet sensitivity requirements but also specificity levels. Optical methods such as NIR spectrophotometry or hyper-spectral image are currently some of the technologies that show potential success. This is the context of this paper that evaluates how to use NIR spectroscopy (900-1600nm) to detect traces of 15 different kinds of nuts and 20 other flours.