Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection

The Imaging and Slitless Spectroscopy Instrument for Surveys (ISSIS): expected radiometric performance, operation modes and data handling

ISSIS is the instrument for imaging and slitless spectroscopy on-board WSO-UV. In this article, a detailed comparison between ISSIS expected radiometric performance and other ultraviolet instruments is shown. In addition, we present preliminary information on the performance verification tests and on the foreseen procedures for in-flight operation and data handling.

World Space Observatory-Ultraviolet: ISSIS, the imaging instrument

The Imaging and Slitless Spectroscopy Instrument (ISSIS) will be flown as part of the science instrumentation in the World Space Observatory-Ultraviolet (WSO-UV). ISSIS will be the first UV imager to operate in a high Earth orbit from a 2 m class space telescope. In this contribution, the science driving the ISSIS design and the main characteristics of this instrument are presented.