Effect of van der Waals interaction on the properties of SnS2 layered semiconductor

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included.

Smoothing of PV power fluctuations by geographical dispersion

The quality and the reliability of the power generated by large grid-connected photovoltaic (PV) plants are negatively affected by the source characteristic variability. This paper deals with the smoothing of power fluctuations because of geographical dispersion of PV systems. The fluctuation frequency and the maximum fluctuation registered at a PV plant ensemble are analyzed to study these effects. We propose an empirical expression to compare the fluctuation attenuation because of both the size and the number of PV plants grouped. The convolution of single PV plants frequency distribution functions has turned out to be a successful tool to statistically describe the behavior of an ensemble of PV plants and determine their maximum output fluctuation. Our work is based on experimental 1-s data collected throughout 2009 from seven PV plants, 20 MWp in total, separated between 6 and 360 km.