Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increased

Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices

Although everybody should know thatmeasurements are never performed directly onmaterials but on devices, this is not generally true. Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide. Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free fromsurface effects. By replacing this unjustified assumption with a propermodel forGaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces.

Ammonia and Greenhouse Gases Emission from Slurry Storage with impermeable Cover and Landspreading of Cattle Slurry

Intensive farm systems handle large volume of livestock wastes, resulting in adverse environmental effects, such as gaseous losses into the atmosphere in form of ammonia (NH3) and greenhouse gases (GHG), i.e. methane (CH4), carbon dioxide (CO2) and nitrous oxide (N2O). In this study, the manure management continuum of slurry storage with impermeable cover and following cattle slurry band spreading and incorporation to soil was assessed for NH3 and GHG emissions. The experiment was conducted in an outdoor covered storage (flexible bag system) (study I), which collected the slurry produced in 7 dairy cattle farms (2,000 m3 slurry) during 12 days in the northern Spain.