Laser-fired contact optimization in c-Si solar cells

In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c-Si and mc-Si solar cell fabrication: thermally grown silicon oxide (SiO2), deposited phosphorus-doped amorphous silicon carbide (a-SiCx/H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm2 have been obtained

Evaluación de la madera estructural para la rehabilitación de las Naves Cros (Valencia, España) por medio de diferentes técnicas no destructivas

El proyecto de rehabilitación de una de las naves del complejo fabril de la industria química ?CROS? en Valencia se llevó a cabo con el criterio de mantener, en la medida de lo posible, los elementos estructurales presentes en la nave. Con este objetivo se realizaron una serie de ensayos no destructivos (END) in situ. Estos ensayos permitieron evaluar la calidad de la madera, determinar qué elementos estructurales debían ser sustituidos y comprobar la aptitud de los que iban a ser reutilizados. Los END empleados en este estudio fueron los siguientes: (1) Identificación de la especie por técnicas anatómicas, (2) Clasificación resistente por método visual, (3) Estimación de humedad por la técnica de resistencia eléctrica; (4) Obtención de velocidades de propagación ultrasónicas (5) Resistógrafía y (6) Alteración de la propagación de ondas electromagnéticas por medio de Georradar. Para la calibración de estos END se tomó una muestra de piezas y se hicieron ensayos destructivos bajo condiciones controladas en laboratorio. En el trabajo que aquí se presenta se muestra la metodología empleada durante el proceso de toma de datos, de análisis de resultados y de cruce de la información obtenida a partir de cada uno de los ensayos hasta llegar a un diagnóstico para los elementos analizados. The assessment of structural timber was requested in the rehabilitation project of the Naves of the chemical industry "CROS". The criterion was to maintain as much as possible timber of the structure and to make only partial replacements. In order not to damage the existing structure and to assess the quality of the existing timber, a series of non-destructive testing (NDT) in the entire structure were performed: (1) Identification of the species by anatomical techniques, (2) Strength grading by visual method, (3) Estimation of moisture content by the technique of electrical resistance, (4) Acquisition of ultrasonic propagation velocities (5) Resistography and (6) Record of the propagation of electromagnetic waves by means of Ground-penetrating radar. Following, a sample group was chose to carry out destructive testing in the lab and compare the NDT results with those obtained with the standard UNE-EN408 (modules of strength, stiffness and density). In the present work, the results provided by each of the NDT techniques are detailed and above all, what is more important, the validity of these after they have been contrasted with the destructive standard tests.

Fabrication process of Mo/Au TES at RT

We report on the fabrication details of TES based on Mo/Au bilayers. The Mo layer is deposited by radio frequency (RF) sputtering and capped with a sputter deposited thin Au protection layer. Afterwards, a second Au layer of suitable (lower) resistivity is deposited ex‐situ by e‐beam evaporation, until completion of the total desired Au thickness. The deposition was performed at room temperature (RT) on LPCVD Si3 N4 membranes. Such a deposition procedure is very reproducible and allow controlling the critical temperature (Tc) and normal electrical resistance (RN ) of the Mo/Au bilayer. The process is optimized to achieve low stress bilayers, thus avoiding the undesirable curvature of the membranes. Bilayers are patterned using photolithographic techniques and wet etching procedures. Mo superconducting paths are used to contact the Mo/Au bilayers, thus ensuring good electrical conductivity and thermal isolation. The entire fabrication process let to stable and reproducible sensors with required and tunable functional properties

Biomechanics of smart wings in a bat robot: morphing wings using SMA actuators

This paper presents the design of a bat-like micro aerial vehicle with actuated morphing wings. NiTi shape memory alloys (SMAs) acting as artificial biceps and triceps muscles are used for mimicking the morphing wing mechanism of the bat flight apparatus. Our objective is twofold. Firstly, we have implemented a control architecture that allows an accurate and fast SMA actuation. This control makes use of the electrical resistance measurements of SMAs to adjust morphing wing motions. Secondly, the feasibility of using SMA actuation technology is evaluated for the application at hand. To this purpose, experiments are conducted to analyze the control performance in terms of nominal and overloaded operation modes of the SMAs. This analysis includes: (i) inertial forces regarding the stretchable wing membrane and aerodynamic loads, and (ii) uncertainties due to impact of airflow conditions over the resistance–motion relationship of SMAs. With the proposed control, morphing actuation speed can be increased up to 2.5 Hz, being sufficient to generate lift forces at a cruising speed of 5ms−1.

Investigación sobre la aplicación de energía solar a una depuradora convencional de fangos activos

El consumo de energía es responsable de una parte importante de las emisiones a la atmósfera de CO2, que es uno de los principales causantes del efecto invernadero en nuestro planeta. El aprovechamiento de la energía solar para la producción de agua caliente, permite economizar energía y disminuir el impacto del consumo energético sobre el medio ambiente y por tanto un menor impacto medioambiental. El objetivo de la presente investigación consiste en estudiar el aprovechamiento solar para el calentamiento de los fangos en los digestores anaerobios mediante agua caliente circulando en el interior de un serpentín que rodea la superficie de dicho digestor, como apoyo a los métodos convencionales del calentamiento de fangos como la resistencia eléctrica o el intercambiador de calor mediante la energía obtenida por el gas metano producido en la digestión anaerobia. Para el estudio se utilizaron 3 digestores, dos delos cuales se calentaron con agua caliente en el interior de un serpentín (uno aislado mediante una capa de fibra de vidrio y poliuretano y otro sin aislar).El tercer digestor no tenía calentamiento exterior con el objetivo de observar su comportamiento y comparar su evolución con el resto de los digestores .La comparación de los digestores 1 y 2 nos permitió estudiar la conveniencia de proveer de aislamiento al digestor. La transferencia de calor mediante serpentín de cobre dio valores comprendidos entre 83 y 92%. La aplicación de la instalación a una depuradora a escala real para mantenimiento en el interior del digestor a T=32ºC en diferentes climas: climas templados, cálidos y fríos, consistió en el cálculo de la superficie de colectores solares y superficie de serpentín necesario para cubrir las necesidades energéticas anuales de dicho digestor, así como el estudio de rentabilidad de la instalación, dando los mejores resultados para climas cálidos con períodos de retorno de 12 años y una tasa interna de rentabilidad (TIR) del 16% obteniendo una cobertura anual del 79% de las necesidades energéticas con energía solar térmica. Energy consumption accounts for a significant part of the emissions of CO2, which is one of the main causes of the greenhouse effect on our planet. The use of solar energy for hot water production. can save energy and reduce the impact of energy consumption on the environment and therefore a reduced environmental impact. The objective of this research is to study the solar utilization for heating the sludge in anaerobic digesters by hot water circulating inside a coil surrounding the surface of digester, to support conventional heating methods sludge as the electrical resistance or heat exchanger by energy generated by the methane gas produced in the anaerobic digestion. To study 3 digesters used two models which are heated with hot water within a coil (one insulated by a layer of fiberglass and polyurethane and other uninsulated) .The third digester had no external heating in order to observe their behavior and compare their evolution with the rest of the .The comparison digesters digesters 1 and 2 allowed us to study the advisability of providing insulation to the digester. Heat transfer through copper coil gave values between 83 and 92%. The installation application to a treatment for maintaining full scale within the digester at T = 32ºC in different climates: temperate, warm and cold climates, consisted of calculating the surface area of solar collectors and coil required to cover the annual energy needs of the digester, and the study of profitability of the installation, giving the best results for hot climates with return periods of 12 years and an internal rate of return (IRR) of 16% achieving an annual coverage of 79 % of energy needs with solar energy.

Individualization and Electrical Characterization of SiGe Nanowires

SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective

Study of the Electrical Behavior in Intermediate Band-Si Junctions

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance per Carrier RK= h/q^2

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK/(2pi)

Different approaches to grounding resistance. Calculation for thin wire structures at low frequency energization

The present paper deals with the calculation of grounding resistance of an electrode composed of thin wires, that we consider here as perfect electric conductors (PEC) e.g. with null internal resistance, when buried in a soil of uniform resistivity. The potential profile at the ground surface is also calculated when the electrode is energized with low frequency current. The classic treatment by using leakage currents, called Charge Simulated Method (CSM), is compared with that using a set of steady currents along the axis of the wires, here called the Longitudinal Currents Method (LCM), to solve the Maxwell equations. The method of moments is applied to obtain a numerical approximation of the solution by using rectangular basis functions. Both methods are applied to two types of electrodes and the results are also compared with those obtained using a thirth approach, the Average Potential Method (APM), later described in the text. From the analysis performed, we can estimate a value of the error in the determination of grounding resistance as a function of the number of segments in which the electrodes are divided.

Influence of fabrication steps on optical and electrical properties of InN thin films

This paper reports on a case study of the impact of fabrication steps on InN material properties. We discuss the influence of annealing time and sequence of device processing steps. Photoluminescence (PL), surface morphology and electrical transport (electrical resistivity and low frequency noise) properties have been studied as responses to the adopted fabrication steps. Surface morphology has a strong correlation with annealing times, while sequences of fabrication steps do not appear to be influential. In contrast, the optical and electrical properties demonstrate correlation with both etching and thermal annealing. For all the studied samples PL peaks were in the vicinity of 0.7 eV, but the intensity and full width at half maximum (FWHM) demonstrate a dependence on the technological steps followed. Sheet resistance and electrical resistivity seem to be lower in the case of high defect introduction due to both etching and thermal treatments. The same effect is revealed through 1/f noise level measurements. A reduction of electrical resistivity is connected to an increase in 1/f noise level.