Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

Measurement of plasma electron density generated in an experiment of laser shock processing, utilizing the H­α­-line

In this work we have realized plasma diagnosis produced by Laser (LPP), by means of emission spectroscopy in a Laser Shock Processing (LSP). The LSP has been proposed as an alternative technology, competitive with classical surface treatments. The ionic species present in the plasma together with electron density and its temperature provide significant indicators of the degree of surface effect of the treated material. In order to analyze these indicators, we have realized spectroscopic studies of optical emission in the laser-generated plasmas in different situations. We have worked focusing on an aluminum sample (Al2024) in air and/or in LSP conditions (water flow) a Q-switched laser of Nd:YAG (λ = 1.06 μm, 10 ns of pulse duration, running at 10 Hz repetition rate). The pulse energy was set at 2,5 J per pulse. The electron density has been measured using, in every case, the Stark broadening of H Balmer α line (656.27 nm). In the case of the air, this measure has been contrasted with the value obtained with the line of 281.62 nm of Al II. Special attention has been paid to the self-absorption of the spectral lines used. The measures were realized with different delay times after the pulse of the laser (1–8 μs) and with a time window of 1 μs. In LSP the electron density obtained was between 1017 cm−3 for the shortest delays (4–6 μs), and 1016 cm−3 for the greatest delays (7,8 μs).

Parametrization of the average ionization and radiative cooling rates of carbon plasmas in a wide range of density and temperature

In this work we present an analysis of the influence of the thermodynamic regime on the monochromatic emissivity, the radiative power loss and the radiative cooling rate for optically thin carbon plasmas over a wide range of electron temperature and density assuming steady state situations. Furthermore, we propose analytical expressions depending on the electron density and temperature for the average ionization and cooling rate based on polynomial fittings which are valid for the whole range of plasma conditions considered in this work.

A theory of electron collection by a grid sphere

Use of a spherical grid as electron collector at the anodic end of a tether, as recently proposed, is considered. The standard analysis of space-charge limited current to a solid sphere (with neither magnetic nor plasma-motion effects), which has been shown to best fit TSS1R in-orbit results at very high bias, is used to determine effects from grid transparency on current collected; the analysis is first reformulated in the formalism recently introduced in the two-dimensional analysis of bare-tethers. A discussion of the electric potential created by a spherical grid in vacuum is then carried out; it is shown that each grid-wire collects current well below its maximum OML current, the effective grid transparency being close to its optical value. Formulae for the current to a spherical grid, showing the effects of grid transparency, is determined. A fully consistent analysis of electric potential and electron density, outside and inside the grid, is completed.

PIC computation of electron current collection to a moving bare tether in the mesothermal condition

In tethered satellite technology, it is important to estimate how many electrons a spacecraft can collect from its ambient plasma by a bare electrodynamic tether. The analysis is however very difficult because of the small but significant Geo-magnetic field and the spacecraft’s relative motion to both ions and electrons. The object of our work is the development of a numerical method, for this purpose. Particle-In-Cell (PIC) method, for the calculation of electron current to a positive bare tether moving at orbital velocity in the ionosphere, i.e. in a flowing magnetized plasma under Maxwellian collisionless conditions. In a PIC code, a number of particles are distributed in phase space and the computational domain has a grid on which Poisson equation is solved for field quantities. The code uses the quasi-neutrality condition to solve for the local potential at points in the plasma which coincide with the computational outside boundary. The quasi-neutrality condition imposes ne - ni on the boundary. The Poisson equation is solved in such a way that the presheath region can be captured in the computation. Results show that the collected current is higher than the Orbital Motion Limit (OML) theory. The OML current is the upper limit of current collection under steady collisionless unmagnetized conditions. In this work, we focus on the flowing effects of plasma as a possible cause of the current enhancement. A deficit electron density due to the flowing effects has been worked and removed by introducing adiabatic electron trapping into our model.

Direct Vlasov simulations of electron-attracting cylindrical Langmuir probes in flowing plasmas

Current collection by positively polarized cylindrical Langmuir probes immersed in flowing plasmas is analyzed using a non-stationary direct Vlasov-Poisson code. A detailed description of plasma density spatial structure as a function of the probe-to-plasma relative velocity U is presented. Within the considered parametric domain, the well-known electron density maximum close to the probe is weakly affected by U. However, in the probe wake side, the electron density minimum becomes deeper as U increases and a rarified plasma region appears. Sheath radius is larger at the wake than at the front side. Electron and ion distribution functions show specific features that are the signature of probe motion. In particular, the ion distribution function at the probe front side exhibits a filament with positive radial velocity. It corresponds to a population of rammed ions that were reflected by the electric field close to the positively biased probe. Numerical simulations reveal that two populations of trapped electrons exist: one orbiting around the probe and the other with trajectories confined at the probe front side. The latter helps to neutralize the reflected ions, thus explaining a paradox in past probe theory.

Stark Broadening of Sn III Spectral Lines of Astrophysical Interest: Predictions and Regularities

The determination of the Stark broadening parameters of Sn ions is useful for astrophysicists interested in the determination of the density of electrons in stellar atmospheres. In this paper, we report on the calculated values of the Stark broadening parameters for 171 lines of Sn iii arising from 4d105sns (n= 6–9), 4d105snp (n= 5, 6), 4d105p2, 4d105snd (n= 5–7), 4d105s4f and 4d105s5g. Stark linewidths and line shifts are presented for an electron density of 1023 m−3 and temperatures T= 11 000–75 000 K. These have been calculated using a semi-empirical approach, with a set of wavefunctions obtained from Hartree–Fock relativistic calculations, including core polarization effects. The results obtained have been compared with available experimental data. These can be used to consider the influence of Stark broadening effects in A-type stellar atmospheres

Development of Efficient FPGA-Based Multi-Channel Phase Meters for IR-Interferometers

Infrared (IR) interferometry is a method for measuring the line-electron density of fusion plasmas. The significant performance achieved by FPGAs in solving digital signal processing tasks advocates the use of this type of technology in two-color IR interferometers of modern stellarators, such as the TJ-II (Madrid, Spain) and the future W7-X (Greifswald, Germany). In this work the implementation of a line-average electron density measuring system in an FPGA device is described. Several optimizations for multichannel systems are detailed and test results from the TJ-II as well as from a W7-X prototype are presented.

Theoretical Stark broadening parameters of Pb V spectral lines

In this paper, we report calculated values of the Stark widths and shifts for 72 spectral lines of Pb v. They were calculated using the Griem semi-empirical approach. A set of wavefunctions obtained from Hartree–Fock relativistic calculations including core polarization effects was used. Stark widths and shifts corresponding to lines arising from 5d9ns (n = 7, 8), 5d9 6p, 5d9 6d and 5d9 5f configurations of Pb v. Stark widths and shifts are presented for an electron density of 1017 cm−3 and temperatures T = 1.6–5.0 (104 K). The 2142.5, 2167.9 and 2278.6 Å lines of Pb v recently measured are included in our calculations. In this case, we have included for comparison calculations without core polarization effects. There is good agreement between our calculations and the above-cited experimental values.

Estructura de una red esencial de señalización que regula la homeostasis iónica en plantas

Las plantas son organismos sésiles que han desarrollado la capacidad para detectar variaciones sutiles en su ambiente y producir respuestas adaptativas mediante rutas de señalización. Los estímulos causados por el estrés biótico y abiótico son numerosos y dependiendo del tiempo de exposición y su intensidad, pueden reducir la tasa de crecimiento de las plantas y la producción. Los cambios en la concentración del calcio citosólico libre constituyen una de las primeras reacciones intracelulares a las situaciones de estrés abiótico. En esta situación, el calcio actúa como segundo mensajero y las variaciones en su concentración son descodificadas por proteínas de unión a calcio. Las más conocidas son las manos-EF y los dominios C2. Los dominios C2 han sido descritos como dominios de unión a lípidos dependientes de calcio. Estos dominios se consideran proteínas periféricas solubles en agua que se asocian de manera reversible a los lípidos de la membrana mediante una o dos regiones funcionales: el sitio de unión a calcio y el sitio polibásico. A pesar de que se conoce la estructura molecular de algunos dominios C2, se desconocen aspectos relacionados como las reglas que dirigen su forma de interaccionar con los diferentes fosfolípidos y proteínas, la posición que ocupan en la bicapa lipídica y su papel en la transmisión de señales. En esta tesis se ha estudiado una proteína de Arabidopsis thaliana (At3g17980) representativa de una nueva familia de proteínas con dominios C2, que consiste únicamente de un dominio C2. Esta proteína, llamada AtC2.1, ha sido clonada en el vector pETM11, expresada en E. coli y purificada a homogeneidad en dos pasos cromatográficos. Se obtuvieron cristales de AtC2.1 de buena calidad mediante técnicas de difusión de vapor. La proteína fue co-cristalizada con calcio, fosfocolina (POC) y el fosfolípido 1,2-dihexanoil-sn-glicero-3-fosfo-L-serina (PSF). Se recogieron ocho conjuntos de datos de difracción de rayos X empleando radiación sincrotrón. Los cristales difractaron hasta 1.6 Å de resolución. Siete de ellos pertenecían al grupo ortorrómbico P212121, con las dimensiones de la celdilla unidad a = 35.3, b = 88.9, c = 110.6 Å, y un cristal pertenecía al grupo espacial monoclínico C2, con a = 124.84, b = 35.27, c = 92.32 Å y = 121.70º. La estructura se resolvió mediante la técnica MR-SAD utilizando el cinc como dispersor anómalo. La estructura cristalina mostró que la molécula forma un dímero en el que cada protómero se pliega como un dominio C2 típico, con la topología tipo II y presenta una inserción de 43 aminoácidos que la diferencia de los dominios C2 conocidos. El mapa de densidad electrónica mostró dos átomos de calcio por protómero. Se resolvieron las estructuras de AtC2.1 en complejo con POC o PSF. En ambos complejos, el análisis cristalográfico detectó máximos de densidad electrónica en la región correspondiente al sitio polibásico formado por las hebras 2, 3 5 y el lazo 3. Éstos se interpretaron correctamente como dos moléculas de POC y un átomo de cinc, en un complejo, y como la cabeza polar del PSF en el otro. AtC2.1 define un sitio de interacción con lípidos dependiente de cinc. En conclusión, en este trabajo se presenta la estructura tridimensional de AtC2.1, miembro representativo de una familia de proteínas de Arabidopsis thaliana, identificadas como proteínas que interaccionan con los receptores de ABA. Estas proteínas están constituidas únicamente por un dominio C2. El análisis conjunto de los datos biofísicos y cristalográficos muestra que AtC2.1 es un sensor de calcio que une lípidos usando dos sitios funcionales. Estos datos sugieren un mecanismo de inserción en membrana dependiente de calcio que trae consigo la disociación de la estructura dimérica y, por consiguiente, un cambio en las propiedades de superficie de la molécula. Este mecanismo proporciona las bases del reconocimiento y transporte de los receptores de ABA y/o otras moléculas a la membrana celular. Plants are sessile organisms that have developed the capacity to detect slight variations of their environment. They are able to perceive biotic and abiotic stress signals and to transduce them by signaling pathways in order to trigger adaptative responses. Stress factors are numerous and, depending on their exposition time and their concentration, can reduce plant growth rate, limiting the productivity of crop plants. Changes in the cytosolic free calcium concentration are observed as one of the earliest intracellular reactions to abiotic stress signals. Calcium plays a key role as a second messenger, and calcium concentration signatures, called calcium signals, are decodified by calcium binding proteins. The main calcium binding structures are the EF-hand motif and the C2 domains. C2 domain is a calcium dependent lipid-binding domain of approximately 130 amino acids. C2 domain displays two functional regions: the Ca-binding region and the polybasic cluster. Both of them can interact with the membrane phospholipids. Despite the number of C2 domain 3D structures currently available, questions about how they interact with the different target phospholipids, their precise spatial position in the lipid bilayer, interactions with other proteins and their role in transmitting signals downstream, have not yet been explored. In this work we have studied an uncharacterized protein from Arabidopsis thaliana (At3g17980) consisting of only a single C2 domain, as member of a new protein C2-domain family. This protein called AtC2.1 was cloned into the pETM11 vector and expressed in E. coli, allowing the purification to homogeneity in two chromatographic steps. Good quality diffracting crystals were obtained using vapor-diffusion techniques. Crystals were co-crystalized with calcium; phosphocholine (POC) and/or the phospholipid 1,2-dihexanoyl-sn-glycero-3-phospho-L-serine (PSF). Eight data set were collected with synchrotron radiation. Crystals diffracted up to 1.6 Å resolution and seven of them belong to the orthorhombic space group P212121, with unit-cell parameters a = 35.3, b = 88.9, c = 110.6 Å. Another crystal was monoclinic, space group C2, with a = 124.84, b = 35.27, c = 92.32 Å and = 121.70º. The structural model was solved by MR-SAD using Zn2+ as anomalous scatterer. The crystal structure shows that the molecule is a dimer. Each monomer was folded as a canonical C2 domain with the topology II with a 43 residues insertion. The electron density map reveals two calcium ions per molecule. Structures of AtC2.1, complexed with POC and PSF, have been solved. Well-defined extra electron densities were found, in both complexes, within the concave surface formed by strands 2, 3, 5 and loop 3 of AtC2.1. These densities were clearly explained by the presence of the two POC molecules, one zinc atom and head groups of PSF, occupying the cavity of the polybasic site. AtC2.1 defines a new metal dependent lipid-binding site into the polybasic site. In conclusion, in this thesis it is presented the molecular structure of AtC2.1, a representative member of a family of Arabidopsis thaliana C2 domain proteins, of unknown function, but identified as a molecular interacting unit of the ABA receptors. The joint analyses of the biophysical and crystallographic data show that AtC2.1 is a calcium sensor that binds lipids in two sites and suggest a model of calcium-dependent membrane insertion mechanism that will involve either dimer dissociation or a strong rearrangement of the dimeric structure. This mechanism may be the basis for the recognition and delivery of ABA receptors or other protein molecules to cell membranes.

Relativistic current collection by a cylindrical Langmuir probe

The current I to a cylindrical Langmuir probe with a bias Φp satisfying β≡eΦp/mec2∼O(1) is discussed. The probe is considered at rest in an unmagnetized plasma composed of electrons and ions with temperatureskTe∼kTi≪mec2. For small enough radius, the probe collects the relativistic orbital-motion-limited (OML) current I OML , which is shown to be larger than the non-relativistic result; the OML current is proportional to β1/2 and β3/2 in the limits β≪1 and β≫1, respectively. Unlike the non-relativistic case, the electron density can exceed the unperturbed density value. An asymptotic theory allowed to compute the maximum radius of the probe to collect OML current, the sheath radius for probe radius well below maximum and how the ratio I/I OML drops below unity when the maximum radius is exceeded. A numerical algorithm that solves the Vlasov-Poisson system was implemented and density and potential profiles presented. The results and their implications in a possible mission to Jupiter with electrodynamic bare tethers are discussed density value. An asymptotic theory allowed to compute the maximum radius of the probe to collect OML current, the sheath radius for probe radius well below maximum and how the ratio I/IOML drops below unity when the maximum radius is exceeded. A numerical algorithm that solves the Vlasov-Poisson system was implemented and density and potential profiles presented. The results and their implications in a possible mission to Jupiter with electrodynamic bare tethers are discussed.

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates has been characterized. We analyzed the variation of the surface potential (ΔVsp/ΔpH) and current (ΔIds/ΔpH) with solution pH in devices with the same indium content (17%, in-plane lattice-matched to GaN) and different AlInN thickness (6 nm and 10 nm), and compared with the literature. The shrinkage of the barrier, that has the effect to increase the transconductance of the device, makes the 2-dimensional electron density (2DEG) at the interface very sensitive to changes in the surface. Although the surface potential sensitivity to pH is similar in the two devices, the current change with pH (ΔIds/ΔpH), when biasing the ISFET by a Ag/AgCl reference electrode, is almost 50% higher in the device with 6 nm AlInN barrier, compared to the device with 10 nm barrier. When measuring the current response (ΔIds/ΔpH) without reference electrode, the device with thinner AlInN layer has a larger response than the thicker one, of a factor of 140%, and that current response without reference electrode is only 22% lower than its maximum response obtained using reference electrode.

Ab initio calculations of Ca III Stark broadening parameters,transition probabilities and radiative lifetimes

We have determined matrix elements for all experimental configurations of Ca III, including the 3s3p63d configuration. These values have been obtained using intermediate coupling (IC). For these IC calculations, we have used the standard method of least-squares fitting from the experimental energy levels, using the computer code developed by Robert Cowan. In this paper, using these matrix elements, we report the calculated values of the Ca III Stark widths and shifts for 148 spectral lines, of 56 Ca III spectral line transition probabilities and of eight radiative lifetimes of Ca III levels. The Stark widths and shifts, calculated using the Griem semi-empirical approach, correspond to the spectral lines of Ca III and are presented for an electron density of 1017 cm?3 and temperatures T = 1.0?10.0 (×104 K). The theoretical trends of the Stark broadening parameter versus the temperature are presented for transitions that are of astrophysical interest. There is good agreement between our calculations, for transition probabilities and radiative lifetimes, and the experimental values presented in the literature. We have not been able to find any values for the Stark parameters in the references.

Self-similar motion of laser half-space plasmas. I. Deflagration regime

The one-dimensional self-similar motion of an initially cold, half-space plasma of electron density 0,produced by the (anomalous) absorption of a laser pulse of irradiation = (j>0f/T(0< (< T) at the critical density nc(«c/«0=eelectron heat conduction and ion-electron energy exchange and retains three dimensionless numbers: e, Zt (ion charge number), and a = (9/c/4m,) (T/C 2n l/4>oKe)213, where k, m, are Boltzmann's constant and the ion mass, and Ke X (electron temperature)5'2 = heat conductivity. If a >e- 4 ' 3 , a deflagration wave separates an isentropic compression with a shock bounding the undisturbed plasma, and an isentropic expansion flow to the vacuum. The structures of these three regions are completely determined; in particular, the Chapman-Jouguet condition is proved and the density behind the deflagration is found. The deflagration-compression thickness ratio is large (small) for a^e- 5 ' 3(a>e- 5 ' 3 ) . The compression to expansion ratio for both energy and thickness is 0(e"2). For Z,- large, a deflagration exists even if a~e~413. Condition a>e~4'3 may be applied to pulses that are not linear.

Self-similar motion of laser half-space plasmas. II. Thermal waves and intermediate regimes

The one-dimensional self-similar motion of an initially cold, half-space plasma of electron density n,produced by the (anomalous) absorption of a laser pulse of irradiation

density nc, is considered; the analysis, which allows for electron heat conduction and ion-electron energy exchange, involves three dimensionless numbers: e = nc/n0 assumed small, Z, (ion charge number), and a parameter adensity is so small that the plasma becomes collisionless. The analysis is also invalid for a too small. Using results previously found for a>€~4'3, a qualitative discussion of how plasma behavior changes with a, is given.