The scenario of two-dimensional instabilities of the cylinder wake under EHD forcing: A linear stability analysis

We propose to study the stability properties of an air flow wake forced by a dielectric barrier discharge (DBD) actuator, which is a type of electrohydrodynamic (EHD) actuator. These actuators add momentum to the flow around a cylinder in regions close to the wall and, in our case, are symmetrically disposed near the boundary layer separation point. Since the forcing frequencies, typical of DBD, are much higher than the natural shedding frequency of the flow, we will be considering the forcing actuation as stationary. In the first part, the flow around a circular cylinder modified by EHD actuators will be experimentally studied by means of particle image velocimetry (PIV). In the second part, the EHD actuators have been numerically implemented as a boundary condition on the cylinder surface. Using this boundary condition, the computationally obtained base flow is then compared with the experimental one in order to relate the control parameters from both methodologies. After validating the obtained agreement, we study the Hopf bifurcation that appears once the flow starts the vortex shedding through experimental and computational approaches. For the base flow derived from experimentally obtained snapshots, we monitor the evolution of the velocity amplitude oscillations. As to the computationally obtained base flow, its stability is analyzed by solving a global eigenvalue problem obtained from the linearized Navier–Stokes equations. Finally, the critical parameters obtained from both approaches are compared.

Resonant behaviour of the barrier of YBa2Cu3O7 grain boundary Josephson junctions fabricated on bicrystalline substrates with different geometries

We have analyzed a resonant behavior in the dielectric constant associated to the barrier of YBa2Cu3O7 (YBCO) grain boundary Josephson junctions (GBJJs) fabricated on a wide variety of bicrystalline substrates: 12° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt symmetric, 24° [1 0 0] tilt asymmetric, 45° [1 0 0] tilt asymmetric and 24° [0 0 1] tilt symmetric +45° [1 0 0] tilt asymmetric bicrystals. The resonance analysis allows us to estimate a more appropriate value of the relative dielectric constant, and so a more adequate value for the length L of the normal N region assuming a SNINS model for the barrier. In this work, the L dependence on the critical current density Jc has been investigated. This analysis makes possible a single representation for all the substrate geometries independently on around which axes the rotation is produced to generate the grain boundary. On the other hand, no clear evidences exist on the origin of the resonance. The resonance frequency is in the order of 1011 Hz, pointing to a phonon dynamic influence on the resonance mechanism. Besides, its position is affected by the oxygen content of the barrier: a shift at low frequencies is observed when the misorientation angle increases.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.