6 resultados para Cu-ZnO-ZrO2 : HZSM-5

em Universidad Politécnica de Madrid


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Sobre el Centro José Guerrero de Antonio Jiménez Torrecillas en Granada.

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After 14 years under conventional plough tillage (CT) or conservation minimum tillage (MT), the soil available Al, Fe, Mn, Cu and Zn (0-5, 5-15 and 15-30 cm layers) and their plant uptake were evaluated during two years in a ryegrass-maize forage rotation in NW Spain (t emperate-humid region). The three-way ANOVA showed that trace element concentrations in soil were mainly influenced by sampling date, followed by soil depth and tillage system (35-73 %, 7-58 % and 3- 11 % of variance explained, respectively). Excepting for Fe (CT) and Al (CT and MT), the elemental concentrations decreased with depth, the stratification being stronger under MT. For soil available Al, Fe, Mn and Cu, the concentrations were higher in CT than in MT (5-15 and 15-30 cm layers) or were not affected by tillage system (0-5 cm). In contrast, the available Zn contents were higher in MT than CT at the soil surface and did not differ in deeper layers. The concentration of Al, Fe and Cu in crops were not influenced by tillage system, which explain 22 % of Mn variance in maize (CT > MT in the more humid year) and 18 % of Zn variance in ryegrass (MT > CT in both years). However, in the summer crop (maize) the concentrations of Fe, Mn and Zn tended to be higher in MT than in CT under drought conditions, while the opposite was true in the year without water limitation. Therefore, under the studied conditions of climate, soil, tillage and crop rotation, little influence of tillage system on crop nutritive value would be expected. To minimize the potential deficiency of Zn (maize) and Cu (maize and ryegrass) on crop yields the inclusion of these micro-nutrients in fertilization schedule is reco mmended, as well as liming to alleviate Al toxicity on maize crops.

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Strong high-order Rayleigh or Sezawa modes, in addition to the fundamental Rayleigh mode, have been observed in ZnO/GaAs(001) systems along the [110] propagation direction of GaAs. The dispersion of the different acoustic waves has been calculated and compared to the experimental data. The bandwidth and impedance matching characteristics of the multimode SAW delay lines operating at high frequencies (2.5-3.5 GHz regime) have been investigated.

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Recientes publicaciones han mostrado propiedades fotocatalíticas interesantes en sistemas basados en TiO2 y ZnO. En unos casos hay presentes fases de ambos óxidos binarios en íntimo contacto [1] y en otros se tienen óxidos mixtos (titanatos de Zn) de distintas estequiometrías [2]; estos últimos, además, se han podido dopar con nitrógeno para obtener actividad con luz visible [3]. Las características electrónicas relevantes de estos sistemas (posición relativa de los niveles de ambas fases en el primero, estructura de bandas para los titanatos con o sin N) se conocen muy poco. Aquí se realiza un estudio teórico cuántico de estos materiales, usando para mayor exactitud funcionales híbridos (pues es sabido que la DFT estándar predice mal los bandgaps). Además se tienen en cuenta desarrollos teóricos recientes que permiten determinar ab initio, para semiconductores de gap alto, el coeficiente más adecuado de mezcla de intercambio HF [4, 5], y formular reglas para obtener con más exactitud el alineamiento de bandas que se establece a través de una interfaz [5, 6].

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Based on our previous knowledge on Cu/Nb nanoscale metallic multilayers (NMMs), Cu/WNMMs show a good potential for applications as heat skins in plasma experiments and armors, and it could be expected that the substitution of Nb byWwould increase the strength, particularly at high temperatures. To check this hypothesis, Cu/WNMMs with individual layer thicknesses ranging between 5 and 30 nm were deposited by physical vapour deposition, and their mechanical properties were measured by nanoindentation. The results showed that, contrary to Cu/Nb NMMs, the hardness was independent of the layer thickness and decreased rapidlywith temperature, especially above 200 °C. This behavior was attributed to the growth morphology of theWlayers aswell as the jagged Cu/W interface, both a consequence of the lowW adatom mobility during deposition. Therefore, future efforts on the development of Cu/Wmultilayers should concentrate on optimization of theWdeposition parameters via substrate heating and/or ion assisted deposition to increase the W adatom mobility during deposition.

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Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.