Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

Extended description of tunnel junctions for distributed modeling of concentrator multi-junction solar cells

One of the key components of highly efficient multi-junction concentrator solar cells is the tunnel junction interconnection. In this paper, an improved 3D distributed model is presented that considers real operation regimes in a tunnel junction. This advanced model is able to accurately simulate the operation of the solar cell at high concentraions at which the photogenerated current surpasses the peak current of the tunnel junctionl Simulations of dual-junction solar cells were carried out with the improved model to illustrate its capabilities and the results have been correlated with experimental data reported in the literature. These simulations show that under certain circumstances, the solar cells short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading toward dark regions, which occurs through the anode/p-barrier of the tunnel junction.

Connexin-43 prevents hematopoietic stem cell senescence through transfer of reactive oxygen species to bone marrow stromal cells

Hematopoietic stem cell (HSC) aging has become a concern in chemotherapy of older patients. Humoral and paracrine signals from the bone marrow (BM) hematopoietic microenvironment (HM) control HSC activity during regenerative hematopoiesis. Connexin-43 (Cx43), a connexin constituent of gap junctions (GJs) is expressed in HSCs, down-regulated during differentiation, and postulated to be a self-renewal gene. Our studies, however, reveal that hematopoietic-specific Cx43 deficiency does not result in significant long-term competitive repopulation deficiency. Instead, hematopoietic Cx43 (H-Cx43) deficiency delays hematopoietic recovery after myeloablation with 5-fluorouracil (5-FU). 5-FU-treated H-Cx43-deficient HSC and progenitors (HSC/P) cells display decreased survival and fail to enter the cell cycle to proliferate. Cell cycle quiescence is associated with down-regulation of cyclin D1, up-regulation of the cyclin-dependent kinase inhibitors, p21cip1. and p16INK4a, and Forkhead transcriptional factor 1 (Foxo1), and activation of p38 mitogen-activated protein kinase (MAPK), indicating that H-Cx43-deficient HSCs are prone to senescence. The mechanism of increased senescence in H-Cx43-deficient HSC/P cells depends on their inability to transfer reactive oxygen species (ROS) to the HM, leading to accumulation of ROS within HSCs. In vivo antioxidant administration prevents the defective hematopoietic regeneration, as well as exogenous expression of Cx43 in HSC/P cells. Furthermore, ROS transfer from HSC/P cells to BM stromal cells is also rescued by reexpression of Cx43 in HSC/P. Finally, the deficiency of Cx43 in the HM phenocopies the hematopoietic defect in vivo. These results indicate that Cx43 exerts a protective role and regulates the HSC/P ROS content through ROS transfer to the HM, resulting in HSC protection during stress hematopoietic regeneration.

Highly conductive p++-AlGaAs/n ++-GaInP tunnel junctions for ultra-high concentrator solar cells

Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentration applications. We have developed a highly conductive, high bandgap p  + + -AlGaAs/n  + + -GaInP tunnel junction with a peak tunneling current density for as-grown and thermal annealed devices of 996 A/cm 2 and 235 A/cm 2, respectively. The J–V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra-high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice-matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm 2 with respect to previous designs.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.