Ion Beam irradiation of copper nitride: electronic vs elastic-collision mechanism

Copper nitride is a metastable material which results very attractive because of their potential to be used in functional device. Cu3 N easily decomposes into Cu and N2 by annealing [1] or irradiation (electron, ions, laser) [2, 3]. Previous studies carried out in N-rich Cu3 N films irradiated with Cu at 42MeV evidence a very efficient sputtering of N whose yield (5×10 3 atom/ion), for a film with a thickness of just 100 nm, suggest that the origin of the sputtering has an electronic nature. This N depletion was observed to be responsible for new phase formation ( Cu2 O) and pure Cu [4]

Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Nitrogen sputtering yields as high as 104 atoms/ion, are obtained by irradiating N-rich-Cu3N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10?42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5?10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (Se). A stopping power (Sth) threshold of ?3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

Chemical speciation and mobilization of copper and zinc in naturally contaminated mine soils with citric and tartaric acids

A one-step extraction procedure and a leaching column experiment were performed to assess the effects of citric and tartaric acids on Cu and Zn mobilization in naturally contaminated mine soils to facilitate assisted phytoextraction. A speciation modeling of the soil solution and the metal fractionation of soils were performed to elucidate the chemical processes that affected metal desorption by organic acids. Different extracting solutions were prepared, all of which contained 0.01 M KNO3 and different concentrations of organic acids: control without organic acids, 0.5 mM citric, 0.5 mM tartaric, 10 mM citric, 10 mM tartaric, and 5 mM citric +5 mM tartaric. The results of the extraction procedure showed that higher concentrations of organic acids increased metal desorption, and citric acid was more effective at facilitating metal desorption than tartaric acid. Metal desorption was mainly influenced by the decreasing pH and the dissolution of Fe and Mn oxides, not by the formation of soluble metal–organic complexes as was predicted by the speciation modeling. The results of the column study reported that low concentrations of organic acids did not significantly increase metal mobilization and that higher doses were also not able to mobilize Zn. However, 5–10 mM citric acid significantly promoted Cu mobilization (from 1 mg kg−1 in the control to 42 mg kg−1 with 10 mM citric acid) and reduced the exchangeable (from 21 to 3 mg kg−1) and the Fe and Mn oxides (from 443 to 277 mg kg−1) fractions. Citric acid could efficiently facilitate assisted phytoextraction techniques.

Ionization levels of doped copper indium sulfide chalcopyrites

The electronic structure of modified chalcopyrite CuInS2 has been analyzed from first principles within the density functional theory. The host chalcopyrite has been modified by introducing atomic impurities M at substitutional sites in the lattice host with M = C, Si, Ge, Sn, Ti, V, Cr, Fe, Co, Ni, Rh, and Ir. Both substitutions M for In and M for Cu have been analyzed. The gap and ionization energies are obtained as a function of the M-S displacements. It is interesting for both spintronic and optoelectronic applications because it can provide significant information with respect to the pressure effect and the nonradiative recombination.

Mechanical properties of wood from Pinus sylvestris L. treated with Light Organic Solvent Preservative and with waterbone Copper Azole

El objetivo del estudio es determinar el efecto de tratamiento de la madera de Pinus sylvestris con sustancias protectoras en las propiedades mecánicas. Para ello se utilizan 40 muestras de madera libre de defectos de Pinus sylvestris L. tratándose con protectores orgánicos (Vacsol Azure WR 2601) 50 con protectores hidrosolubles (Tanalith E 3492) y 40 muestras de control sin tratamiento. Se evaluó la resistencia mecánica a la flexión estática, módulo de elasticidad y la fuerza de compresión paralela a la fibra fueron comparados con madera no tratada. El análisis de regresión entre la penetración y la fuerza de compresión paralela se realizó con las muestras tratadas con conservante a base de agua. Resultados principales: Los resultados indican que la madera tratada (con cualquiera de los productos) presenta un aumento estadísticamente significativo de la resistencia mecánica en todas las tres características mecánicas. Los resultados obtenidos difieren de estudios anteriores llevada a cabo por otros autores. No hubo correlación entre la resistencia a la compresión en paralelo y el grado de impregnación de la madera con base de agua de cobre azoles. La explicación más probable para estos resultados se refiere a cambios en la presión durante el tratamiento. El uso de muestras de control no tratadas en lugar de las muestras tratadas sólo con agua es más probable para producir resultados significativos en los estudios de resistencia mecánica . La investigación pone de relieve que la madera tratada presenta un aumento estadísticamente significativo en el Modulo de Elasticidad, módulo de rotura a la flexión estática y resistencia a la compresión paralela. No hubo correlación entre la resistencia a la compresión en paralelo y el grado de impregnación con conservante hidrosoluble.

Electronic structure of copper nitrides as a function of nitrogen content

he nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26 ± 2 to 33 ± 2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from − 5 to − 50 μV/K in the Seebeck coefficient and to large enhancements, from 10− 3 up to 10 Ω cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.

Fiber penetration and copper access regulation

Research question, methodology and messages to take home - Impact of copper (legacy networks)regulation(LLU and bitstream)on NGN adoption - Methodology: fixed effects regression and forecasting with s- curves(logistic) - Key message:(excessive) copper regulation discourages NGN adoption (deployment, investments), in particular an increase ofunbundling access charges and/or a decrease of wholesale access would increase penetration of fibre and cable modem.