Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

Evidence of charge carrier number fluctuations in InN thin films?

Due to its small band-gap and its high mobility, InN is a promising material for a large number of key applications like band-gap engineering for high efficiency solar cells, light emitting diodes, and high speed devices. Unfortunately, it has been reported that this material exhibits strong surface charge accumulation which may depend on the type of surface. Current investigations are conducted in order to explain the mechanisms which govern such a behavior and to look for ways of avoiding it and/or finding applications that may use such an effect. In this framework, low frequency noise measurements have been performed at different temperatures on patterned MBE grown InN layers. The evolution of the 1/f noise level with temperature in the 77 K-300 K range is consistent with carrier number fluctuations thus indicating surface mechanisms: the surface charge accumulation is confirmed by the noise measurements.

Estabilidad de un buque ultra heavy lift carrier

Se plantea la posible demanda en un futuro del transporte de grandes plataformas petrolíferas semisumergibles de más de 70.000 t de peso, para perforaciones a más de 10.000 pies de profundidad. Estudia la estabilidad de buques Heavy Lift Carrier con mangas atípicas, capaces de transportar estas cargas, y en algunos casos sobresaliendo por sus amuras. Para esto se: 1. Estudia y genera posibles carenas, su compartimentación y lastre para la inmersión o emersión de la cubierta de intemperie, a más de 10 m de profundidad para tomar o dejar la carga, optimizando el proceso. 2. Analiza la estabilidad del buque tanto en inmersión/emersión y navegación, con máximas cargas y con altos centros de gravedad, y establece ábacos de estabilidad límite en función de los parámetros del buque. 3. Plantea la corrección de estabilidad excesiva del buque en condiciones de navegación para evitar las excesivas aceleraciones. Los resultados obtenidos aportan ábacos que permiten, en función de los parámetros carga a transportar (Zg max) - Peso Carga), elegir el buque más adecuado, capaz de efectuar la inmersión, emersión, y navegación, y plantea acciones futuras de investigación. ABSTRACT This work raises the potential demand in the future, to transport large semisubmersible oil rigs over 70,000 tonnes of weight for drilling to 10,000 feet deep. Study vessel stability Heavy Lift Carrier with atypical breadths capable of carrying these burdens, and in some cases standing out for their bows. 1. Examines possible hulls, their partitioning and ballast for immersion or emersion of the weather deck, more than 10 m deep to take –loading (lifting) - or leave (off- loading). 2. Analyzes the stability of the vessel both immersion / emersion and navigation, with maximum loads with high centers of gravity and stability limit states abacus according to the parameters of the ship. 3. Correction raises the stability of the ship over navigation to prevent excessive accelerations. The results allow, in terms of cargo transport parameters (Zg max) - Weight Load), choosing the most suitable vessel capable of carrying out the immersion, emersion, and navigation, and suggests future research activities.

Car Carrier 5.800 TPM

Tipo de Buque: Car Carrier. Capacidad de carga: carga 1: 3000 coches sin trailers. Carga 2: Carga combinada para 1500 ml de trailers y coches en el resto de las cubiertas del buque no ocupadas por los trailers. Peso muerto 5800 TPM. Capacidad de conductores: 100 personas en camarotes dobles. Sociedad de clasificación: Det Norske Veritas. Reglamentos: Solas, Marpol, Convenio de líneas de carga. Velocidad: 19 nudos al 85% MCR en pruebas. Autonomía: 4500 millas al 80% MCR y 15% al margen de mar. Tripulación 25 personas.

Electrochemical potentials (Quasi-Fermi Levels) and the operation of hot-carrier, impact-ionization, and intermediate-band solar cells

In the framework of the so-called third generation solar cells, three main concepts have been proposed in order to exceed the limiting efficiency of single-gap solar cells: the hot-carrier solar cell, the impact-ionization or multiple-exciton-generation solar cell, and the intermediate-band solar cell. At first sight, the three concepts are different, but in this paper, we illustrate how all these concepts, including the single-gap solar cell, share a common trunk that we call "core photovoltaic material." We demonstrate that each one of these next-generation concepts differentiates in fact from this trunk depending on the hypotheses that are made about the physical principles governing the electron electrochemical potentials. In the process, we also clarify the differences between electron, phonon, and photon chemical potentials (the three fundamental particles involved in the operation of the solar cell). The in-depth discussion of the physics involved about the operation of these cells also provides new insights about the operation of these cells.

Controlled exercise as a tool for preventing obesity and metabolic diseases in Arg64 carrier women.

Genética y ejercicio.

Analysis of wave attenuation and shore protection of a bulk carrier ship performing as a detached floating breakwater

Análisis de la atenuación del oleaje por un carguero funcionando como dique flotante y aplicación a dos casos de protección portuaria y costera. The effectiveness of a bulk carrier working as a detached floating breakwater to protect a stretch of coast and form salients or tombolos is assessed in this paper. Experiments were conducted in the Madrid CEDEX facilities in a 30 m long, 3 m wide, 1/150 scale flume. The bulk carrier ship is 205 m long, 29 m wide and 18 m in height with a draught of 13 m, and has been subjected to irregular waves with significant heights from 2 m to 4 m and peak periods from 6 s to 12 s at a depth of 15 m, all prototype dimensions. Three probes were placed between the wave paddle and the ship to record incident and reflected waves and four probes were placed between the ship and the coastline to measure the transmitted waves. Transmission, reflection and dissipation coefficients (Ct, Cr, Cd) were calculated to determine wave attenuation. Results show good shelter in the lee of the ship with values of Ct under 0.5 for peak periods from 6 s to 11 s. In addition, forces on the mooring chains were measured showing maximum values of about 2000 tons at a 10 speak period. Finally, two analytical models were used to determine the shoreline’s response to the ship’s protection and to assess the possible forming of salients or tombolos. According to the results, salients - but not tombolos - are formed in all tests.

On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance per Carrier RK= h/q^2

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK/(2pi)