Thermodynamics of zinc insertion in CuGaS2:Ti, used as a modulator agent in an intermediate-band photovoltaic material

An intermediate-bandphotovoltaicmaterial, which has an isolated metallic band located between the top of the valence band and bottom of the conduction band of some semiconductors, has been proposed as third generation solar cell to be used in photovoltaic applications. Density functional theory calculations of Zn in CuGaS2:Ti have previously shown that, the intermediate-band position can be modulated in proportion of Zn insertion in such a way that increasing Zn concentration can lead to aband-gap reduction, and an adjustment of the intermediate-band position. This could be interesting in the formation of an intermediate-bandmaterial, that has the maximum efficiency theoretically predicted for the intermediate-band solar cell. In this work, the energetics of several reaction schemes that could lead to the decomposition of the modulated intermediate-bandphotovoltaicmaterial, CuGaS2:Ti:Zn, is studied in order to assess the thermodynamic stability of this material. Calculations of the total free energy and disorder entropy have been taken into account, to get the reaction energy and free energy of the compound decomposition, which is found to be thermodynamically favorable

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth conditions may lead to selective growth but not be suitable for subsequent vertical growth. With optimized conditions, ordered GaN nanocolumns can be grown with a wide variety of diameters. In this work, ordered GaN nanocolumns with diameter as small as 50 nm are shown.

Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks

•Self- assembled Ga(In)N Nanorods and Nanostructures •Ordered growth of GaN Nanorods: masks issues •Ordered growth of GaN Nanorods: mechanisms •White NanoLEDs

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.

Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites.

Effect of the temperature, strain rate and microstructure on flow and fracture characteristics of Ti-45Al-2Nb-2Mn+0.8vol.% TiB2 XD alloy

A series of quasi-static and dynamic tensile tests at varying temperatures were carried out to determine the mechanical behaviour of Ti-45Al-2Nb-2Mn+0.8vol.% TiB2 XD as-HIPed alloy. The temperature for the tests ranged from room temperature to 850  ∘C. The effect of the temperature on the ultimate tensile strength, as expected, was almost negligible within the selected temperature range. Nevertheless, the plastic flow suffered some softening because of the temperature. This alloy presents a relatively low ductility; thus, a low tensile strain to failure. The dynamic tests were performed in a Split Hopkinson Tension Bar, showing an increase of the ultimate tensile strength due to the strain rate hardening effect. Johnson-Cook constitutive relation was used to model the plastic flow. A post-testing microstructural of the specimens revealed an inhomogeneous structure, consisting of lamellar α2 + γ structure and γ phase equiaxed grains in the centre, and a fully lamellar structure on the rest. The assessment of the duplex-fully lamellar area ratio showed a clear relationship between the microstructure and the fracture behaviour.

Retos de la Gerencia de TI para construir sistemas de información exitosos: aportes claves del usuario final

Por décadas y hasta el presente, numerosos continúan siendo los casos de SI fallidos, parcial o totalmente, causando grandes pérdidas en las organizaciones y planteando serios retos a los profesionales de las TI y a los niveles de Dirección. La literatura reconoce que los principales factores influyentes son más de orden social que tecnológico, dando un peso relevante al rol de usuario final y sugiriendo profundizar en su investigación, por considerarlo como el “stakeholder” clave para el éxito de un SI. Este estudio empírico ha buscado ampliar las subdimensiones y analizar el impacto de tres factores críticos de dicho rol desde la perspectiva del mismo usuario final, no hallados en la literatura sobre el tema. Se presentan los resultados de un análisis cuantitativo y otro cualitativo, complementándose ambos enfoques y dando las mayores cargas a los factores “conocimientos” y “participación” efectiva. Las conclusiones más significativas resaltan la relevancia de la gerencia del conocimiento así como medidas preventivas respecto a las subdimensiones analizadas para reducir los riesgos inherentes. Se estima que los resultad os aportan mayor detalle a la teoría y a la práctica sobre los SI en las organizaciones.

Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content

In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.

Estructuras, Procesos, Indicadores para Gestionar el Proceso de la Demanda Estratégica en las TI

En los últimos años, el desarrollo industrial a nivel globalizado en los diferentes sectores, la difusión de la TI y el uso estratégico de la misma, han crecido de manera exponencial. El uso adecuado de esta, se ha convertido en una gran preocupación para los órganos de gobierno de las organizaciones ya que la falta de dirección y control en las inversiones que se realizan en ellas, así como un uso inadecuado de las mismas pueden comprometer la consecución de los objetivos de la organización, su competitividad y su sostenibilidad a medio-largo plazo. La preocupación de los propietarios de los negocios es mejorar su rendimiento con la ayuda de la TI frente a sus competidores, realizando los procesos de negocio de una manera eficaz y eficiente, por lo que muchas organizaciones han realizado inversiones importantes en la adquisición de tecnología para lograr sus propósitos. Sin embargo la ejecución de estas inversiones no se ha gestionado adecuadamente, conforme a las políticas y planes especificados en los planes de negocio de la organización y la entrega de los servicios de TI no ha sido conforme a los objetivos previstos, generando pérdidas importantes y lo que es peor un gran deterioro de la imagen de la organización, por lo que consideramos a la gestión de la demanda estratégica de la TI como uno de los factores claves para el éxito de los negocios, el cual no ha sido tomada en cuenta por los consejos de gobierno o los altos ejecutivos de las organizaciones. La investigación comienza con una amplia revisión de la literatura, identificando dos elementos muy importantes, la demanda y el suministro de la TI dentro de la gobernanza corporativa de la TI; notándose la escasa información relacionado con la gestión de la demanda estratégica de la TI. Se realizó un estudio exploratorio para conocer como los miembros del consejo de administración y altos ejecutivos de una organización gestionan la demanda estratégica de la TI, obteniendo una respuesta de 130 encuestados, donde se confirma que hace falta normas o metodologías para la gestión de la demanda estratégica de la TI. En base a estos resultados se ha construido un marco de trabajo para todo el proceso de la gestión de la demanda de la TI y como una solución que se plantea en esta tesis doctoral, consiste en la elaboración de una metodología, combinando e integrando marcos de trabajo y estándares relacionados con la gobernanza corporativa de la TI. La metodología propuesta está conformada por tres fases, cada fase con sus actividades principales, y cada actividad principal por un conjunto de sub-actividades. Además, se establecen los roles y responsabilidades de los altos ejecutivos para cada una de las actividades principales. Esta propuesta debe ser de fácil implantación y aplicable en las organizaciones, permitiendo a estas afrontar con éxito el desarrollo de sus negocios, con una mejor calidad, reduciendo los costes de operación y empleando el menor tiempo posible. La validación de la metodología propuesta se realizó a través de una encuesta online y un estudio de casos. En la encuesta de validación participaron 42 altos ejecutivos de diferentes empresas y el estudio de casos se realizó con 5 empresas internacionales. Las respuestas de los estudios fueron analizados, para determinar la aceptación o el rechazo de la metodología propuesta por los participantes, confirmando la validez y confiabilidad del estudio. Este es uno de los primeros estudios reportado con evidencias empíricas para el proceso de la gestión de la demanda estratégica de la TI. Los resultados de esta investigación han sido publicados en revistas y congresos internacionales. ABSTRACT In recent years, the globalized industrial development, diffusion and strategic use of IT in different sectors has grown exponentially. Proper use of IT has become a major concern for government bodies and organizations. Uncontrolled or mismanaged IT investments or improper IT use may compromise the achievement of an organization’s objectives, competitiveness and sustainability in the medium to long term. Business owners set out to use IT to outperform their competitors, enacting business processes effectively and efficiently. Many organizations have made significant investments in technology in order to achieve their aims. However, the deployment of these investments has not been managed properly in accordance with the policies and plans specified in the organizations’ business plans, and IT services have not been delivered in accordance with the specified objectives. This has generated significant losses and, worse still, has seriously damaged the image of organizations. Accordingly, we believe that IT strategic demand management is one of the key factors for business success which has not been overlooked by the boards of trustees or senior executives of organizations. The research begins with an extensive review of the literature. This review has identified two very important elements: IT demand and supply within the corporate governance of IT. We have found that information related to IT strategic demand management is scant. We conducted an exploratory study to learn how members of the board of directors and senior executives of an organization manage IT strategic demand. The survey, which was taken by 130 respondents, confirmed that standards or methodologies are needed to manage IT strategic demand. Based on the results, we have built a framework for the entire IT demand management process. The solution proposed in this thesis is to develop a methodology, combining and integrating frameworks and standards related to the corporate governance of IT. The proposed methodology is divided into three phases. Each phase is composed of a series of key activities, and each key activity is further split into minor activities. We also establish the roles and responsibilities of senior executives for each of the key activities. This proposal should be easy to implement and apply in organizations, enabling corporations to successfully conduct better quality business, reduce operating costs and save time. The proposed methodology was validated by means of an online survey and a case study. The validation survey was completed by 42 senior executives from different companies, and the case study was conducted at five international companies. The study results were analysed to determine the acceptance or rejection of the proposed methodology by the participants, confirming the validity and reliability of the study. This is one the first studies to report empirical evidence for the process of IT strategic demand management. The results of this research have been published in international journals and conferences.

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

Evolution of microstructure, macrotexture and mechanical properties of commercially pure Ti during ECAP-conform processing and drawing

Long-length ultrafine-grained (UFG) Ti rods are produced by equal-channel angular pressing via the conform scheme (ECAP-C) at 200 °C, which is followed by drawing at 200 °C. The evolution of microstructure, macrotexture, and mechanical properties (yield strength, ultimate tensile strength, failure stress, uniform elongation, elongation to failure) of pure Ti during this thermo-mechanical processing is studied. Special attention is also paid to the effect of microstructure on the mechanical behavior of the material after macrolocalization of plastic flow. The number of ECAP-C passes varies in the range of 1–10. The microstructure is more refined with increasing number of ECAP-C passes. Formation of homogeneous microstructure with a grain/subgrain size of 200 nm and its saturation after 6 ECAP-C passes are observed. Strength properties increase with increasing number of ECAP passes and saturate after 6 ECAP-C passes to a yield strength of 973 MPa, an ultimate tensile strength of 1035 MPa, and a true failure stress of 1400 MPa (from 625, 750, and 1150 MPa in the as-received condition). The true strain at failure failure decreases after ECAP-C processing. The reduction of area and true strain to failure values do not decrease after ECAP-C processing. The sample after 6 ECAP-C passes is subjected to drawing at 200¯C resulting in reduction of a grain/subgrain size to 150 nm, formation of (10 1¯0) fiber texture with respect to the rod axis, and further increase of the yield strength up to 1190 MPa, the ultimate tensile strength up to 1230 MPa and the true failure stress up to 1600 MPa. It is demonstrated that UFG CP Ti has low resistance to macrolocalization of plastic deformation and high resistance to crack formation after necking.

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.

Simulation of the deformation of polycrystalline nanostructured Ti by computational homogenization

Computational homogenization by means of the finite element analysis of a representative volume element of the microstructure is used to simulate the deformation of nanostructured Ti. The behavior of each grain is taken into account using a single crystal elasto-viscoplastic model which includes the microscopic mechanisms of plastic deformation by slip along basal, prismatic and pyramidal systems. Two different representations of the polycrystal were used. Each grain was modeled with one cubic finite element in the first one while many cubic elements were used to represent each grain in the second one, leading to a model which includes the effect of grain shape and size in a limited number of grains due to the computational cost. Both representations were used to simulate the tensile deformation of nanostructured Ti processed by ECAP-C as well as the drawing process of nanostructured Ti billets. It was found that the first representation based in one finite element per grain led to a stiffer response in tension and was not able to predict the texture evolution during drawing because the strain gradient within each grain could not be captured. On the contrary, the second representation of the polycrystal microstructure with many finite elements per grain was able to predict accurately the deformation of nanostructured Ti.

Effect of Stress Level on the High Temperature Deformation and Fracture Mechanisms of Ti-45Al-2Nb-2Mn-0.8 vol. pct TiB2: An In Situ Experimental Study

The effect of the applied stress on the deformation and crack nucleation and propagation mechanisms of a c-TiAl intermetallic alloy (Ti-45Al-2Nb-2Mn (at. pct)-0.8 vol. pct TiB2) was examined by means of in situ tensile (constant strain rate) and tensile-creep (constant load) experiments performed at 973 K (700 �C) using a scanning electron microscope. Colony boundary cracking developed during the secondary stage in creep tests at 300 and 400 MPa and during the tertiary stage of the creep tests performed at higher stresses. Colony boundary cracking was also observed in the constant strain rate tensile test. Interlamellar ledges were only found during the tensile-creep tests at high stresses (r>400 MPa) and during the constant strain rate tensile test. Quantitative measurements of the nature of the crack propagation path along secondary cracks and along the primary crack indicated that colony boundaries were preferential sites for crack propagation under all the conditions investigated. The frequency of interlamellar cracking increased with stress, but this fracture mechanism was always of secondary importance. Translamellar cracking was only observed along the primary crack.

Propuesta de una metodología para gestión de proyectos de outsourcing de TI para proveedores

Los avances tecnológicos actuales que han llevado a una economía globalmente conectada, junto con la creciente tendencia hacia la privatización, globalización y desregulación están dando lugar a nuevos modelos organizativos y a un aumento de la colaboración entre proveedores y clientes, compartiendo información y flujos de proceso. Todo ello ha contribuido directamente a la gran expansión del outsourcing y a que se considere como una herramienta estratégica para las organizaciones. En este entorno y dada la creciente complejidad organizativa, el uso de una metodología para ayudar a la implantación de proyectos de outsourcing se ha convertido en algo casi necesario. En los últimos años se han propuesto algunas metodologías, especialmente para apoyo de las organizaciones cliente de outsourcing, pero no consideramos que sean completas en cuanto a contemplar todos los aspectos necesarios para guiar un proyecto de outsourcing. Es por ello que, en este artículo, proponemos una metodología para gestión de proyectos de outsourcing de TI desde el punto de vista del proveedor que sea completa y fácil de aplicar. Abstract -. Current technological advances that have led to a globally connected economy, together with the increasing trend towards privatization and deregulation, are leading to new organizational models and increased collaboration between suppliers and customers, sharing information and process flows. This has directly contributed to the great expansion of outsourcing, considering it as a strategic tool for organizations. In this environment, and given the increasing organizational complexity, the use of a methodology to assist the implementation of outsourcing projects has become almost necessary. In recent years several methodologies and models have been proposed, especially for supporting client outsourcing organizations, but we do not consider them to be complete, they do not cover all necessary aspects to manage an outsourcing project. That is the reason because we, in this paper, propose a methodology for outsourcing project management from the point of view of the suppliers that was complete and easy to apply.