Intermittency reinjection probability density function with and without noise effects.

Intermittency phenomenon is a continuous route from regular to chaotic behaviour. Intermittency is an occurrence of a signal that alternates chaotic bursts between quasi-regular periods called laminar phases, driven by the so called reinjection probability density function (RPD). In this paper is introduced a new technique to obtain the RPD for type-II and III intermittency. The new RPD is more general than the classical one and includes the classical RPD as a particular case. The probabilities of the laminar length, the average laminar lengths and the characteristic relations are determined with and without lower bound of the reinjection in agreement with numerical simulations. Finally, it is analyzed the noise effect in intermittency. A method to obtain the noisy RPD is developed extending the procedure used in the noiseless case. The analytical results show a good agreement with numerical simulations.

On the Mahalanobis Distance Classification Criterion for Multidimensional Normal Distributions

Many existing engineering works model the statistical characteristics of the entities under study as normal distributions. These models are eventually used for decision making, requiring in practice the definition of the classification region corresponding to the desired confidence level. Surprisingly enough, however, a great amount of computer vision works using multidimensional normal models leave unspecified or fail to establish correct confidence regions due to misconceptions on the features of Gaussian functions or to wrong analogies with the unidimensional case. The resulting regions incur in deviations that can be unacceptable in high-dimensional models. Here we provide a comprehensive derivation of the optimal confidence regions for multivariate normal distributions of arbitrary dimensionality. To this end, firstly we derive the condition for region optimality of general continuous multidimensional distributions, and then we apply it to the widespread case of the normal probability density function. The obtained results are used to analyze the confidence error incurred by previous works related to vision research, showing that deviations caused by wrong regions may turn into unacceptable as dimensionality increases. To support the theoretical analysis, a quantitative example in the context of moving object detection by means of background modeling is given.

Nonparametric Message Passing Methods for Cooperative Localization and Tracking

The objective of this thesis is the development of cooperative localization and tracking algorithms using nonparametric message passing techniques. In contrast to the most well-known techniques, the goal is to estimate the posterior probability density function (PDF) of the position of each sensor. This problem can be solved using Bayesian approach, but it is intractable in general case. Nevertheless, the particle-based approximation (via nonparametric representation), and an appropriate factorization of the joint PDFs (using message passing methods), make Bayesian approach acceptable for inference in sensor networks. The well-known method for this problem, nonparametric belief propagation (NBP), can lead to inaccurate beliefs and possible non-convergence in loopy networks. Therefore, we propose four novel algorithms which alleviate these problems: nonparametric generalized belief propagation (NGBP) based on junction tree (NGBP-JT), NGBP based on pseudo-junction tree (NGBP-PJT), NBP based on spanning trees (NBP-ST), and uniformly-reweighted NBP (URW-NBP). We also extend NBP for cooperative localization in mobile networks. In contrast to the previous methods, we use an optional smoothing, provide a novel communication protocol, and increase the efficiency of the sampling techniques. Moreover, we propose novel algorithms for distributed tracking, in which the goal is to track the passive object which cannot locate itself. In particular, we develop distributed particle filtering (DPF) based on three asynchronous belief consensus (BC) algorithms: standard belief consensus (SBC), broadcast gossip (BG), and belief propagation (BP). Finally, the last part of this thesis includes the experimental analysis of some of the proposed algorithms, in which we found that the results based on real measurements are very similar with the results based on theoretical models.

Two-layer particle filter for multiple target detection and tracking

This paper deals with the detection and tracking of an unknown number of targets using a Bayesian hierarchical model with target labels. To approximate the posterior probability density function, we develop a two-layer particle filter. One deals with track initiation, and the other with track maintenance. In addition, the parallel partition method is proposed to sample the states of the surviving targets.

Tropospheric scintillation with concurrent rain attenuation at 50 GHz in Madrid

Tropospheric scintillation can become a significant impairment in satellite communication systems, especially in those with low fade-margin. Moreover, fast amplitude fluctuations due to scintillation are even larger when rain is present on the propagation path. Few studies of scintillation during rain have been reported and the statistical characterization is still not totally clear. This paper presents experimental results on the relationship between scintillation and rain attenuation obtained from slant-path attenuation measurements at 50 GHz. The study is focused on the probability density function (PDF) of various scintillation parameters. It is shown that scintillation intensity, measured as the standard deviation of the amplitude fluctuations, increases with rain attenuation; in the range 1-10 dB this relationship can be expressed by power-law or linear equations. The PDFs of scintillation intensity conditioned to a given rain attenuation level are lognormal, while the overall long-term PDF is well fltted by a generalized extreme valué (GEV) distribution. The short-term PDFs of amplitude conditioned to a given intensity are normal, although skewness effects are observed for the strongest intensities. A procedure is given to derive numerically the overall PDF of scintillation amplitude using a combination of conditional PDFs and local statistics of rain attenuation.

On the complexity of radiation models for PV energy production calculation

Several authors have analysed the changes of the probability density function of the solar radiation with different time resolutions. Some others have approached to study the significance of these changes when produced energy calculations are attempted. We have undertaken different transformations to four Spanish databases in order to clarify the interrelationship between radiation models and produced energy estimations. Our contribution is straightforward: the complexity of a solar radiation model needed for yearly energy calculations, is very low. Twelve values of monthly mean of solar radiation are enough to estimate energy with errors below 3%. Time resolutions better than hourly samples do not improve significantly the result of energy estimations.

Modelling Pinus pinea forest management to attain natural regeneration under present and future climatic scenarios

Natural regeneration-based silviculture has been increasingly regarded as a reliable option in sustainable forest management. However, successful natural regeneration is not always easy to achieve. Recently, new concerns have arisen because of changing future climate. To date, regeneration models have proved helpful in decision-making concerning natural regeneration. The implementation of such models into optimization routines is a promising approach in providing forest managers with accurate tools for forest planning. In the present study, we present a stochastic multistage regeneration model for Pinus pinea L. managed woodlands in Central Spain, where regeneration has been historically unsuccessful. The model is able to quantify recruitment under different silviculture alternatives and varying climatic scenarios, with further application to optimize management scheduling. The regeneration process in the species showed high between-year variation, with all subprocesses (seed production, dispersal, germination, predation, and seedling survival) having the potential to become bottlenecks. However, model simulations demonstrate that current intensive management is responsible for regeneration failure in the long term. Specifically, stand densities at rotation age are too low to guarantee adequate dispersal, the optimal density of seed-producing trees being around 150 stems·ha−1. In addition, rotation length needs to be extended up to 120 years to benefit from the higher seed production of older trees. Stochastic optimization confirms these results. Regeneration does not appear to worsen under climate change conditions; the species exhibiting resilience worthy of broader consideration in Mediterranean silviculture.

Nonparametric generalized belief propagation based on pseudo-junction tree for cooperative localization in wireless networks

Non-parametric belief propagation (NBP) is a well-known message passing method for cooperative localization in wireless networks. However, due to the over-counting problem in the networks with loops, NBP’s convergence is not guaranteed, and its estimates are typically less accurate. One solution for this problem is non-parametric generalized belief propagation based on junction tree. However, this method is intractable in large-scale networks due to the high-complexity of the junction tree formation, and the high-dimensionality of the particles. Therefore, in this article, we propose the non-parametric generalized belief propagation based on pseudo-junction tree (NGBP-PJT). The main difference comparing with the standard method is the formation of pseudo-junction tree, which represents the approximated junction tree based on thin graph. In addition, in order to decrease the number of high-dimensional particles, we use more informative importance density function, and reduce the dimensionality of the messages. As by-product, we also propose NBP based on thin graph (NBP-TG), a cheaper variant of NBP, which runs on the same graph as NGBP-PJT. According to our simulation and experimental results, NGBP-PJT method outperforms NBP and NBP-TG in terms of accuracy, computational, and communication cost in reasonably sized networks.

Massively parallelizable list-mode reconstruction using a Monte Carlo-based elliptical Gaussian model

Purpose: A fully three-dimensional (3D) massively parallelizable list-mode ordered-subsets expectation-maximization (LM-OSEM) reconstruction algorithm has been developed for high-resolution PET cameras. System response probabilities are calculated online from a set of parameters derived from Monte Carlo simulations. The shape of a system response for a given line of response (LOR) has been shown to be asymmetrical around the LOR. This work has been focused on the development of efficient region-search techniques to sample the system response probabilities, which are suitable for asymmetric kernel models, including elliptical Gaussian models that allow for high accuracy and high parallelization efficiency. The novel region-search scheme using variable kernel models is applied in the proposed PET reconstruction algorithm. Methods: A novel region-search technique has been used to sample the probability density function in correspondence with a small dynamic subset of the field of view that constitutes the region of response (ROR). The ROR is identified around the LOR by searching for any voxel within a dynamically calculated contour. The contour condition is currently defined as a fixed threshold over the posterior probability, and arbitrary kernel models can be applied using a numerical approach. The processing of the LORs is distributed in batches among the available computing devices, then, individual LORs are processed within different processing units. In this way, both multicore and multiple many-core processing units can be efficiently exploited. Tests have been conducted with probability models that take into account the noncolinearity, positron range, and crystal penetration effects, that produced tubes of response with varying elliptical sections whose axes were a function of the crystal's thickness and angle of incidence of the given LOR. The algorithm treats the probability model as a 3D scalar field defined within a reference system aligned with the ideal LOR. Results: This new technique provides superior image quality in terms of signal-to-noise ratio as compared with the histogram-mode method based on precomputed system matrices available for a commercial small animal scanner. Reconstruction times can be kept low with the use of multicore, many-core architectures, including multiple graphic processing units. Conclusions: A highly parallelizable LM reconstruction method has been proposed based on Monte Carlo simulations and new parallelization techniques aimed at improving the reconstruction speed and the image signal-to-noise of a given OSEM algorithm. The method has been validated using simulated and real phantoms. A special advantage of the new method is the possibility of defining dynamically the cut-off threshold over the calculated probabilities thus allowing for a direct control on the trade-off between speed and quality during the reconstruction.

Aplicación de la teoría de redes complejas a procesos dinámicos en la sociedad

Podemos definir la sociedad como un sistema complejo que emerge de la cooperación y coordinación de billones de individuos y centenares de países. En este sentido no vivimos en una isla sino que estamos integrados en redes sociales que influyen en nuestro comportamiento. En esta tesis doctoral, presentamos un modelo analítico y una serie de estudios empíricos en los que analizamos distintos procesos sociales dinámicos desde una perspectiva de la teoría de redes complejas. En primer lugar, introducimos un modelo para explorar el impacto que las redes sociales en las que vivimos inmersos tienen en la actividad económica que transcurre sobre ellas, y mas concretamente en hasta qué punto la estructura de estas redes puede limitar la meritocracia de una sociedad. Como concepto contrario a meritocracia, en esta tesis, introducimos el término topocracia. Definimos un sistema como topocrático cuando la influencia o el poder y los ingresos de los individuos vienen principalmente determinados por la posición que ocupan en la red. Nuestro modelo es perfectamente meritocrático para redes completamente conectadas (todos los nodos están enlazados con el resto de nodos). Sin embargo nuestro modelo predice una transición hacia la topocracia a medida que disminuye la densidad de la red, siendo las redes poco densascomo las de la sociedad- topocráticas. En este modelo, los individuos por un lado producen y venden contenidos, pero por otro lado también distribuyen los contenidos producidos por otros individuos mediando entre comprador y vendedor. La producción y distribución de contenidos definen dos medios por los que los individuos reciben ingresos. El primero de ellos es meritocrático, ya que los individuos ingresan de acuerdo a lo que producen. Por el contrario el segundo es topocrático, ya que los individuos son compensados de acuerdo al número de cadenas mas cortas de la red que pasan a través de ellos. En esta tesis resolvemos el modelo computacional y analíticamente. Los resultados indican que un sistema es meritocrático solamente si la conectividad media de los individuos es mayor que una raíz del número de individuos que hay en el sistema. Por tanto, a la luz de nuestros resultados la estructura de la red social puede representar una limitación para la meritocracia de una sociedad. En la segunda parte de esta tesis se presentan una serie de estudios empíricos en los que se analizan datos extraídos de la red social Twitter para caracterizar y modelar el comportamiento humano. En particular, nos centramos en analizar conversaciones políticas, como las que tienen lugar durante campañas electorales. Nuestros resultados indican que la atención colectiva está distribuida de una forma muy heterogénea, con una minoría de cuentas extremadamente influyente. Además, la capacidad de los individuos para diseminar información en Twitter está limitada por la estructura y la posición que ocupan en la red de seguidores. Por tanto, de acuerdo a nuestras observaciones las redes sociales de Internet no posibilitan que la mayoría sea escuchada por la mayoría. De hecho, nuestros resultados implican que Twitter es topocrático, ya que únicamente una minoría de cuentas ubicadas en posiciones privilegiadas en la red de seguidores consiguen que sus mensajes se expandan por toda la red social. En conversaciones políticas, esta minoría de cuentas influyentes se compone principalmente de políticos y medios de comunicación. Los políticos son los mas mencionados ya que la gente les dirige y se refiere a ellos en sus tweets. Mientras que los medios de comunicación son las fuentes desde las que la gente propaga información. En un mundo en el que los datos personales quedan registrados y son cada día mas abundantes y precisos, los resultados del modelo presentado en esta tesis pueden ser usados para fomentar medidas que promuevan la meritocracia. Además, los resultados de los estudios empíricos sobre Twitter que se presentan en la segunda parte de esta tesis son de vital importancia para entender la nueva "sociedad digital" que emerge. En concreto hemos presentado resultados relevantes que caracterizan el comportamiento humano en Internet y que pueden ser usados para crear futuros modelos. Abstract Society can be defined as a complex system that emerges from the cooperation and coordination of billions of individuals and hundreds of countries. Thus, we do not live in social vacuum and the social networks in which we are embedded inevitably shapes our behavior. Here, we present an analytical model and several empirical studies in which we analyze dynamical social systems through a network science perspective. First, we introduce a model to explore how the structure of the social networks underlying society can limit the meritocracy of the economies. Conversely to meritocracy, in this work we introduce the term topocracy. We say that a system is topocratic if the compensation and power available to an individual is determined primarily by her position in a network. Our model is perfectly meritocratic for fully connected networks but becomes topocratic for sparse networks-like the ones in society. In the model, individuals produce and sell content, but also distribute the content produced by others when they belong to the shortest path connecting a buyer and a seller. The production and distribution of content defines two channels of compensation: a meritocratic channel, where individuals are compensated for the content they produce, and a topocratic channel, where individual compensation is based on the number of shortest paths that go through them in the network. We solve the model analytically and show that the distribution of payoffs is meritocratic only if the average degree of the nodes is larger than a root of the total number of nodes. Hence, in the light of our model, the sparsity and structure of networks represents a fundamental constraint to the meritocracy of societies. Next, we present several empirical studies that use data gathered from Twitter to analyze online human behavioral patterns. In particular, we focus on political conversations such as electoral campaigns. We found that the collective attention is highly heterogeneously distributed, as there is a minority of extremely influential accounts. In fact, the ability of individuals to propagate messages or ideas through the platform is constrained by the structure of the follower network underlying the social media and the position they occupy on it. Hence, although people have argued that social media can allow more voices to be heard, our results suggest that Twitter is highly topocratic, as only the minority of well positioned users are widely heard. This minority of influential accounts belong mostly to politicians and traditional media. Politicians tend to be the most mentioned, while media are the sources of information from which people propagate messages. We also propose a methodology to study and measure the emergence of political polarization from social interactions. To this end, we first propose a model to estimate opinions in which a minority of influential individuals propagate their opinions through a social network. The result of the model is an opinion probability density function. Next, we propose an index to quantify the extent to which the resulting distribution is polarized. Finally, we illustrate our methodology by applying it to Twitter data. In a world where personal data is increasingly available, the results of the analytical model introduced in this work can be used to enhance meritocracy and promote policies that help to build more meritocratic societies. Moreover, the results obtained in the latter part, where we have analyzed Twitter, are key to understand the new data-driven society that is emerging. In particular, we have presented relevant information that can be used to benchmark future models for online communication systems or can be used as empirical rules characterizing our online behavior.

Consideration of tip speed limitations in preliminary analysis of minimum COE wind turbines

A relation between Cost Of Energy, COE, maximum allowed tip speed, and rated wind speed, is obtained for wind turbines with a given goal rated power. The wind regime is characterised by the corresponding parameters of the probability density function of wind speed. The non-dimensional characteristics of the rotor: number of blades, the blade radial distributions of local solidity, twist angle, and airfoil type, play the role of parameters in the mentioned relation. The COE is estimated using a cost model commonly used by the designers. This cost model requires basic design data such as the rotor radius and the ratio between the hub height and the rotor radius. Certain design options, DO, related to the technology of the power plant, tower and blades are also required as inputs. The function obtained for the COE can be explored to �nd those values of rotor radius that give rise to minimum cost of energy for a given wind regime as the tip speed limitation changes. The analysis reveals that iso-COE lines evolve parallel to iso-radius lines for large values of limit tip speed but that this is not the case for small values of the tip speed limits. It is concluded that, as the tip speed limit decreases, the optimum decision for keeping minimum COE values can be: a) reducing the rotor radius for places with high weibull scale parameter or b) increasing the rotor radius for places with low weibull scale parameter

An integral model for natural regeneration of Pinus pinea L. in the Northern Plateau (Spain) = Modelo integral de regeneración natural para Pinus pinea L. en la Meseta Norte (España)

Natural regeneration is an ecological key-process that makes plant persistence possible and, consequently, it constitutes an essential element of sustainable forest management. In this respect, natural regeneration in even-aged stands of Pinus pinea L. located in the Spanish Northern Plateau has not always been successfully achieved despite over a century of pine nut-based management. As a result, natural regeneration has recently become a major concern for forest managers when we are living a moment of rationalization of investment in silviculture. The present dissertation is addressed to provide answers to forest managers on this topic through the development of an integral regeneration multistage model for P. pinea stands in the region. From this model, recommendations for natural regeneration-based silviculture can be derived under present and future climate scenarios. Also, the model structure makes it possible to detect the likely bottlenecks affecting the process. The integral model consists of five submodels corresponding to each of the subprocesses linking the stages involved in natural regeneration (seed production, seed dispersal, seed germination, seed predation and seedling survival). The outputs of the submodels represent the transitional probabilities between these stages as a function of climatic and stand variables, which in turn are representative of the ecological factors driving regeneration. At subprocess level, the findings of this dissertation should be interpreted as follows. The scheduling of the shelterwood system currently conducted over low density stands leads to situations of dispersal limitation since the initial stages of the regeneration period. Concerning predation, predator activity appears to be only limited by the occurrence of severe summer droughts and masting events, the summer resulting in a favourable period for seed survival. Out of this time interval, predators were found to almost totally deplete seed crops. Given that P. pinea dissemination occurs in summer (i.e. the safe period against predation), the likelihood of a seed to not be destroyed is conditional to germination occurrence prior to the intensification of predator activity. However, the optimal conditions for germination seldom take place, restraining emergence to few days during the fall. Thus, the window to reach the seedling stage is narrow. In addition, the seedling survival submodel predicts extremely high seedling mortality rates and therefore only some individuals from large cohorts will be able to persist. These facts, along with the strong climate-mediated masting habit exhibited by P. pinea, reveal that viii the overall probability of establishment is low. Given this background, current management –low final stand densities resulting from intense thinning and strict felling schedules– conditions the occurrence of enough favourable events to achieve natural regeneration during the current rotation time. Stochastic simulation and optimisation computed through the integral model confirm this circumstance, suggesting that more flexible and progressive regeneration fellings should be conducted. From an ecological standpoint, these results inform a reproductive strategy leading to uneven-aged stand structures, in full accordance with the medium shade-tolerant behaviour of the species. As a final remark, stochastic simulations performed under a climate-change scenario show that regeneration in the species will not be strongly hampered in the future. This resilient behaviour highlights the fundamental ecological role played by P. pinea in demanding areas where other tree species fail to persist.

Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density

The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction fLOW. The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when fLOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher.

Almost rejectionless sampling from Nakagami-m distributions (m ≥ 1)

The Nakagami-m distribution is widely used for the simulation of fading channels in wireless communications. A novel, simple and extremely efficient acceptance-rejection algorithm is introduced for the generation of independent Nakagami-m random variables. The proposed method uses another Nakagami density with a half-integer value of the fading parameter, mp ¼ n/2 ≤ m, as proposal function, from which samples can be drawn exactly and easily. This novel rejection technique is able to work with arbitrary values of m ≥ 1, average path energy, V, and provides a higher acceptance rate than all currently available methods. RESUMEN. Método extremadamente eficiente para generar variables aleatorias de Nakagami (utilizadas para modelar el desvanecimiento en canales de comunicaciones móviles) basado en "rejection sampling".

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.