Bit noise from an optical logic gate with laser diodes

Output bits from an optical logic cell present noise due to the type of technique used to obtain the Boolean functions of two input data bits. We have simulated the behavior of an optically programmable logic cell working with Fabry Perot-laser diodes of the same type employed in optical communications (1550nm) but working here as amplifiers. We will report in this paper a study of the bit noise generated from the optical non-linearity process allowing the Boolean function operation of two optical input data signals. Two types of optical logic cells will be analyzed. Firstly, a classical "on-off" behavior, with transmission operation of LD amplifier and, secondly, a more complicated configuration with two LD amplifiers, one working on transmission and the other one in reflection mode. This last configuration has nonlinear behavior emulating SEED-like properties. In both cases, depending on the value of a "1" input data signals to be processed, a different logic function can be obtained. Also a CW signal, known as control signal, may be apply to fix the type of logic function. The signal to noise ratio will be analyzed for different parameters, as wavelength signals and the hysteresis cycles regions associated to the device, in relation with the signals power level applied. With this study we will try to obtain a better understanding of the possible effects present on an optical logic gate with Laser Diodes.

Wavelength monitoring with semiconductor laser amplifiers

The semiconductor laser diodes that are typically used in applications of optical communications, when working as amplifiers, present under certain conditions optical bistability, which is characterized by abruptly switching between two different output states and an associated hysteresis cycle. This bistable behavior is strongly dependent on the frequency detuning between the frequency of the external optical signal that is injected into the semiconductor laser amplifier and its own emission frequency. This means that small changes in the wavelength of an optical signal applied to a laser amplifier causes relevant changes in the characteristics of its transfer function in terms of the power requirements to achieve bistability and the width of the hysteresis. This strong dependence in the working characteristics of semiconductor laser amplifiers on frequency detuning suggest the use of this kind of devices in optical sensing applications for optical communications, such as the detection of shifts in the emission wavelength of a laser, or detect possible interference between adjacent channels in DWDM (Dense Wavelength Division Multiplexing) optical communication networks

Laser diode bistability as sensor of optical signals pameters

Laser Diodes have been employed many times as light sources on different kinds of optical sensors. Their main function in these applications was the emission of an optical radiation impinging onto a certain object and, according to the characteristics of the reflected light, some information about this object was obtained. Laser diodes were acting, in a certain way, just as passive devices where their only function was to provide the adequate radiation to be later measured and analyzed. The objective of this paper is to report a new concept on the use of laser diodes taking into account their optical bistable properties. As it has been shown in several places, different laser diodes as, for example, DFB lasers and FP lasers, offer bistable characteristics being these characteristics a function of different parameters as wavelength, light polarization or temperature. Laser Bistability is strongly dependent on them and any small variation of above parameters gives rise to a strong change in the characteristics of its non-linear properties. These variations are analyzed and their application in sensing reported. The dependence on wavelength, spectral width, input power and phase variations, mainly for a Fabry-Perot Laser structure as basic configuration, is shown in this paper.

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

High isolation series-shunt photoconductive microwave switch

This article presents a wide band compact high isolation photoconductive switch, which is based on the series-shunt switch design with three photoconductive switches made of diced high-resistivity silicon wafer placed over a microstrip gap and activated by 808-nm near-infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz. It is easy to operate and control by light, high-speed, electromagnetically transparent and it does not require any biasing circuits.

Propiedades Ópticas de los Materiales Activos en Diodos Láser con Confinamiento Cuántico

En esta tesis se recoge el trabajo experimental realizado para la caracterización de las propiedades ópticas en diodos láser construidos con estructuras basadas en pozos cuánticos (QW) y puntos cuánticos (QD). Las propiedades que se han estudiado en estos dispositivos son los espectros de ganancia, ganancia diferencial, índice diferencial y factor de ensanchamiento de línea (LEF). La comprensión de estas propiedades es de especial importancia para el diseño de nuevos diodos láser destinados a ser utilizados en aplicaciones exigentes como son las comunicaciones ópticas o aplicaciones médicas. El estudio se ha llevado a cabo en muestras de diodos láser suministrados por diferentes fabricantes: Ferdinand Braun Institut für Hóchstfrequenztechnik, Thales Research and Technology y la Universidad de Würzburg. Debido a esto las muestras de los láseres se han suministrado en diferentes configuraciones, utilizándose tanto dispositivos con cavidades de área ancha como de tipo caballete (“ridge”). En los trabajos se ha realizado el diseño y la construcción de los montajes experimentales y la implementación de los métodos analíticos necesarios para el estudio de las diferentes muestras. En los montajes experimentales se han implementado procesos para el filtrado espacial de los modos laterales de la cavidad presentes en los láseres de área ancha. Los métodos analíticos implementados se han utilizado para reducir los errores existentes en los sistemas de medida, mejorar su precisión y para separar la variación de índice en debida al calentamiento y la variación de corriente cuando los láseres operan en continua. El estudio sistemático de las propiedades de ópticas de los diodos láser basados en QW y QD ha permitido concluir que propiedades como el factor de ensanchamiento de línea no tienen por qué ser necesariamente inferiores en estos últimos, ya que dependen de las condiciones de inyección. En los láseres de QW se ha observado experimentalmente una reducción del factor de ensanchamiento de línea al alcanzarse la segunda transición, debido al aumento de la ganancia diferencial. ABSTRACT This thesis includes the experimental work for the characterization of optical properties of quantum well (QW) and quantum dot (QD) laser diodes. The properties that have been studied in these devices are the gain, differential gain, differential index and the linewith enhancement factor (LEF). The understating of these properties is of special importance for the design of new laser diodes to be used in exigent applications such as optical communications or medical applications. The study has been carried out using laser samples supplied by different manufacturers: Ferdinand Braun Institut fu¨r H¨ochstfrequenztechnik, Thales Research and Technology and the University of Wu¨rzburg. Because of this the laser samples were supplied in various configurations, using both broad area and ridge devices. In the work it has been done the design and construction of the experimental setups and implementation of analytical methods required for the study of the different devices. In the experimental set-ups it has been implemented a spatial filtering process to remove the lateral modes present in broad area lasers. The implemented analytical methods has been used to reduce the experimental errors in the measurement systems, improve the accuracy and separate the index variation caused by heating and current variation when the lasers operated on continuous wave. The systematic study of the optical properties of the QW and QD laser diodes has allowed concluding that properties such the linewith enhancement factor does not have to be necessary to be lower in the QD devices, since it is dependent on the injections conditions. In this work it has been experimentally observed a reduction of the linewith enhancement factor where the second transition has been reached mainly due to in the increased of the differential gain which is observed in this situation.