Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

Tras la producción del error: cómo el error en la epistemología se vincula a la arquitectura.

En la vida cotidiana, los errores no solo se reconocen, sino que también nos plantean nuevas situaciones. En la “filosofía de la ciencia” se han tratado como un factor determinante para la definición y la crítica de la propia ciencia. Se pretende que a través de la solución del “problema filosófico del error” de Víctor Brochard, y de algunos episodios claves de la epistemología, reconozcamos “el error” dentro de los procesos arquitectónicos como un factor crítico y productivo en sí mismo. ABSTRACT: In everyday life, errors are not only acknowledged, but they also expose us to new situations. In the field of philosophy of science, errors have been viewed as an important factor for determining and reviewing the definition of science itself. This article proposes that: through Victor Brochard´s solution of “the philosophical problem of error” and through some key aspects in epistemology, we will be able to determine that architectural “errors” can provide us with reflective and productive insights in architecture.

Respuesta hipofisaria y ovulatoria de conejas nulíparas alimentadas con dietas suplementadas con ácidos grasos poliinsaturados n-3.

Veinte conejas nulíparas se alimentaron ad libitum desde las 10 a las 16 semanas de edad con dos piensos isofibrosos, isoenergéticos e isoproteicos suplementados con dos fuentes de grasa diferentes: 0,75% de manteca para la dieta control (grupo C; n=10) ó 1,5% de un suplemento (Optomega-50; Optivite International Ltd., España) que contenía un 50% de extracto etérero y 38% de ácidos grasos poli-insaturados n-3 (AG n-3) para la dieta experimental (grupo P; n=10). A las 16 semanas de edad se determinó el consumo de pienso, así como la tasa de ovulación y las concentraciones plasmáticas de progesterona y LH a 0, 60 min, 5, 7 y 9 días post-inducción de ovulación con 20 μg de Gonadorelina (Inducel-GnRH, Lab. Ovejero). El consumo de pienso (150,5 g/d), el pico preovulatorio de LH (149,7±10,9 ng/ml), la tasa de ovulación (95%) y el número de cuerpos lúteos (9,8±0,7) fueron similares entre tratamientos. Las concentraciones plasmáticas de progesterona aumentaron a los 60 minutos (7,13±19 ng/ml) y 5 días (13,3±1,9 ng/ml) con respecto al día 0 (0,7±1,9 ng/ml; P<0.05), permaneciendo elevadas el día 9 en ambos grupos (19,4±1,9 ng/ml). Además, el día 5 y 7 post-inducción, las hembras alimentadas con la dieta P tendieron a tener niveles más elevados de progesterona en sangre que las alimentadas con la dieta C (16,6±1,9 vs.12,6±1,8 y 19,0±1,8 vs. 15,5±2,1 ng/ml, P=0,068 y P=0,082; respectivamente) que coinciden con el momento de la implantación embrionaria en esta especie. Por lo tanto, la suplementación con AG n-3 podría mejorar los niveles de progesterona en sangre y por lo tanto reducir la mortalidad embrionaria en este punto.

Critical radius for hot-jet ignition of hydrogen-air mixtures

This study addresses deflagration initiation of lean and stoichiometric hydrogen–air mixtures by the sudden discharge of a hot jet of their adiabatic combustion products. The objective is to compute the minimum jet radius required for ignition, a relevant quantity of interest for safety and technological applications. For sufficiently small discharge velocities, the numerical solution of the problem requires integration of the axisymmetric Navier–Stokes equations for chemically reacting ideal-gas mixtures, supplemented by standard descriptions of the molecular transport terms and a suitably reduced chemical-kinetic mechanism for the chemistry description. The computations provide the variation of the critical radius for hot-jet ignition with both the jet velocity and the equivalence ratio of the mixture, giving values that vary between a few tens microns to a few hundred microns in the range of conditions explored. For a given equivalence ratio, the critical radius is found to increase with increasing injection velocities, although the increase is only moderately large. On the other hand, for a given injection velocity, the smallest critical radius is found at stoichiometric conditions.