Component integration strategies in metamorphic 4-junction III-V concentrator solar cells

Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers.

Preliminary temperature accelerated life test (ALT) on lattice mismatched triple-junction concentrator solar cells-on-carriers

A temperature accelerated life test on concentrator lattice mismatched Ga0.37In0.63P/Ga0.83In0.17As/Ge triple-junction solar cells-on-carrier is being carried out. The solar cells have been tested at three different temperatures: 125, 145 and 165°C and the nominal photo-current condition (500X) is emulated by injecting current in darkness. The final objective of these tests is to evaluate the reliability, warranty period, and failure mechanism of these solar cells in a moderate period of time. Up to now only the test at 165°C has finished. Therefore, we cannot provide complete reliability information, but we have carried out preliminary data and failure analysis with the current results.

New strategies in laser processing of TCOs for light management improvement in thin-film silicon solar cells

Light confinement strategies play a crucial role in the performance of thin-film (TF) silicon solar cells. One way to reduce the optical losses is the texturing of the transparent conductive oxide (TCO) that acts as the front contact. Other losses arise from the mismatch between the incident light spectrum and the spectral properties of the absorbent material that imply that low energy photons (below the bandgap value) are not absorbed, and therefore can not generate photocurrent. Up-conversion techniques, in which two sub-bandgap photons are combined to give one photon with a better matching with the bandgap, were proposed to overcome this problem. In particular, this work studies two strategies to improve light management in thin film silicon solar cells using laser technology. The first one addresses the problem of TCO surface texturing using fully commercial fast and ultrafast solid state laser sources. Aluminum doped Zinc Oxide (AZO) samples were laser processed and the results were optically evaluated by measuring the haze factor of the treated samples. As a second strategy, laser annealing experiments of TCOs doped with rare earth ions are presented as a potential process to produce layers with up-conversion properties, opening the possibility of its potential use in high efficiency solar cells.

Temperature of solar cells with regard to photoactive and non-photoactive light absorption in concentrator PV modules

A new method has recently been proposed by us for accurate measurement of the solar cell temperature in any operational regime, in particular, at a maximum power point (MPP) of the I-V curve (T-p-n(MPP)). For this, fast switching of a cell from MPP to open circuit (OC) regime is carried out and open circuit voltage V-oc is measured immediately (within about 1 millisecond), so that this value becomes to be an indicator of T-p-n(MPP). In the present work, we have considered a practical case, when a solar cell is heated not only by absorption of light incident upon its surface (called "photoactive" absorption of power), but also by heat transferred from structural elements surrounding the cell and heated by absorption of direct or diffused sunlight ("non-photoactive" absorption of power with respect to a solar cell). This process takes place in any concentrator module with non-ideal concentrators. Low overheating temperature of the p-n junction (or p-n junctions in a multijunction cell) is a cumulative parameter characterizing the quality of a solar module by the factor of heat removal effectiveness and, at the same time, by the factor of low "non-photoactive" losses.

Energy yield determination of concentrator solar cells using laboratory measurements

The annual energy conversion efficiency is calculated for a four junction inverted metamorphic solar cell that has been completely characterized in the laboratory at room temperature using measurements fit to a comprehensive optoelectronic model of the multijunction solar cells. A simple model of the temperature dependence is used redict the performance of the solar cell under varying temperature and spectra characteristic of Golden, CO for an entire year. The annual energy conversion efficiency is calculated by integrating the predicted cell performance over the entire year. The effects of geometric concentration, CPV system thermal characteristics, and luminescent coupling are ighlighted.

Influencia de las características geométricas de viñedos de la variedad Tempranillo conducidos en espaldera en la interceptación de radiación solar

Con objeto de conocer la influencia de las características geométricas de viñedos (Vitis vinifera L.) conducidos en espaldera sobre la interceptación de radiación solar, se desarrolló un estudio en dos viñedos de la variedad ¿Tempranillo¿ entre los años 2005 y 2008. Estos viñedos tenían diferentes distancias entre filas -2, 2,5 y 3 m-, alturas de vegetación -de 0,9 a 1,4 m- y densidades de vegetación -de 6 a 14 pámpanos/metro lineal. Desde cuajado hasta mediados de maduración se midió la radiación interceptada (Ri), a lo largo del día y con frecuencia horaria, con un sensor lineal de PAR, posicionándolo por encima de la vegetación en horizontal para medir la radiación incidente (Ro), y por debajo de la vegetación en horizontal, consecutivamente hasta cubrir la distancia entre dos filas adyacentes, para medir la radiación transmitida (Rt). También se midieron el índice de área foliar total (IAFT), el índice de área foliar externa (IAFE) y el volumen ocupado por la vegetación (V). IAFT varió entre 0,9 y 2,4 m2m-2, y IAFE entre 0,7 y 1,6 m2m-2. La eficiencia de interceptación de radiación (Ei) aumentó desde 0,2 hasta 0,6 al aumentar la superficie foliar. La disminución de la distancia entre filas y el aumento de la altura de vegetación supusieron aumentos de Ei. IAFTse relacionó con el coeficiente de transmisión de la radiación (T) de forma exponencial, de acuerdo con la ley de Beer. El coeficiente de transmisión global diario (T) y el coeficiente de transmisión mínimo diario (Tmin) se mostraron como buenos estimadores de IAFT. El amontonamiento de la vegetación redujo Ei. Así, a medida que aumentaron las relacionesIAFT/IAFE, y IAFT/V(densidad de superficie foliar) disminuyó el coeficiente de extinción (K). De estos dos índices, IAFT/V fue el que más estrechamente se relacionó con K.

Why can't I measure the external quantum efficiency of the Ge subcell of my multijunction solar cell?

The measurement of the external quantum efficiency (EQE) of low bandgap subcells in a multijunction solar cell can be sometimes problematic. In particular, this paper describes a set of cases where the EQE of a Ge subcell in a conventional GaInP/GaInAs/Ge triple-junction solar cell cannot be fully measured. We describe the way to identify each case by tracing the I-V curve under the same light-bias conditions applied for the EQE measurement, together with the strategies that could be implemented to attain the best possible measurement of the EQE of the Ge subcell.