Precipitated iron: a limit on gettering efficacy in multicrystalline silicon

A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering process on interstitial and precipitated iron in multicrystalline silicon. The model predicts a large concentration of precipitated iron remaining after standard gettering for most as-grown iron distributions. Although changes in the precipitated iron distribution are predicted to be small, the simulated post-processing interstitial iron concentration is predicted to depend strongly on the as-grown distribution of precipitates, indicating that precipitates must be considered as internal sources of contamination during processing. To inform and validate the model, the iron distributions before and after a standard phosphorus diffusion step are studied in samples from the bottom, middle, and top of an intentionally Fe-contaminated laboratory ingot. A census of iron-silicide precipitates taken by synchrotron-based X-ray fluorescence microscopy confirms the presence of a high density of iron-silicide precipitates both before and after phosphorus diffusion. A comparable precipitated iron distribution was measured in a sister wafer after hydrogenation during a firing step. The similar distributions of precipitated iron seen after each step in the solar cell process confirm that the effect of standard gettering on precipitated iron is strongly limited as predicted by simulation. Good agreement between the experimental and simulated data supports the hypothesis that gettering kinetics is governed by not only the total iron concentration but also by the distribution of precipitated iron. Finally, future directions based on the modeling are suggested for the improvement of effective minority carrier lifetime in multicrystalline silicon solar cells.

Experimental verification of intermediate band formation on titanium-implanted silicon

Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28?eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction.

Efficiency of different types of ED-tether thrusters

The efficiencies of electrodynamic-tether (EDT) thrusters made of single bare tethers with different types of cross sections, several parallel bare tethers, or a fully insulated tether with a three-dimensional passive end-collector, are discussed. Current collection, mass, and ohmic resistance considerations are balanced against each other in discussing efficiencies. Use is made of recent results on the validity domain of orbital-motion-limited (OML) collection, the current law beyond that domain, and interference effects between parallel bare tethers; and on current adjustment to variations in electron density encountered in orbit. Comparisons between EDT thrusters and electrical thrusters in terms of the ratio of dedicated mass to the total mission impulse show EDT to be superior for mission times over 50-100 days.

Influence of PH3 exposure on silicon substrate morphology in the MOVPE growth of III-V on silicon multijunction solar cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. One of the first issues to be considered in the development of this structure will be the strategy to create the silicon emitter of the bottom subcell. In this study, we explore the possibility of forming the silicon emitter by phosphorus diffusion (i.e. exposing the wafer to PH3 in a MOVPE reactor) and still obtain good surface morphologies to achieve a successful III-V heteroepitaxy as occurs in conventional III-V on germanium solar cell technology. Consequently, we explore the parameter space (PH3 partial pressure, time and temperature) that is needed to create optimized emitter designs and assess the impact of such treatments on surface morphology using atomic force microscopy. Although a strong degradation of surface morphology caused by prolonged exposure of silicon to PH3 is corroborated, it is also shown that subsequent anneals under H-2 can recover silicon surface morphology and minimize its RMS roughness and the presence of pits and spikes.

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.

Performance analysis of a 7-kW crystalline silicon generator after 17 years of operation in Madrid

The degradation observed on a 7-kWp Si-x photovoltaic array after 17 years of exposure on the roof of the Solar Energy Institute of the Polytechnic University of Madrid is presented. The mean peak power degradation has been 9% over this time, or an equivalent to 0.53% per year, whereas peak power standard deviation has remained constant. The main visual defects are backsheet delamination at the polyester/polyvinyl fluoride outer interface and cracks in the terminal boxes and at the joint between the frame and the laminate. Insulation resistance complies well with the requirements of the International Electrotechnical Commission 61215 tests.

Performance of bare-tether systems under varying magnetic and plasma conditions

Electrodynamic tethered systems, in which an exposed portion of the conducting tether itself collects electrons from the ionosphere, promise to attain currents of 10 A or more in low Earth orbit. For the first time, another desirable feature of such bare-tether systems is reported and analyzed in detail: Collection by a bare tether is relatively insensitive to variations in electron density that are regularly encountered on each revolution of an orbit. This self-adjusting property of bare-tether systems occurs because the electron-collecting area on the tether is not fixed, but extends along its positively biased portion, and because the current varies as collecting length to a power greater than unity. How this adjustment to density variations follows from the basic collection law of thin cylinders is shown. The effect of variations in the motionally induced tether voltage is also analyzed. Both power and thruster modes are considered. The performance of bare-tether systems to tethered systems is compared using passive spherical collectors of fixed area, taking into consideration recent experimental results. Calculations taking into account motional voltage and plasma density around a realistic orbit for bare-tether systems suitable for space station applications are also presented.

Analysis of bare-tether systems for deorbiting low-earth-orbit satellites

Performances, design criteria, and system mass of bare tethers for satellite deorbiting missions are analyzed. Orbital conditions and tether cross section define a tether length, such that 1) shorter tethers are electron collecting practically in their whole extension and 2) longer tethers collect practically the short-circuit current in a fixed segment length. Long tethers have a higher drag efficiency (defined as the drag force vs the tether mass) and are better adapted to adverse plasma densities. Dragging efficiency and mission-related costs are used to define design criteria for tether geometry. A comparative analysis with electric thrusters shows that bare tethers have much lower costs for low- and midinclination orbits and remain an attractive option up to 70 deg.

Efficiency of electrodynamic tether thrusters

The performance efficiency of electrodynamic bare tethers acting as thrusters in low Earth orbit, as gauged by the ratio of the system mass dedicated to thrust over mission impulse, is analyzed and compared to the performance efficiency of electrical thrusters. Tether systems are much lighter for times beyond six months in space-tug operations, where there is a dedicated solar array, and beyond one month for reboost of the International Space Station, where the solar array is already in place. Bare-tether propulsive efficiency itself, with the tether considered as part of the power plant, is higher for space tugs. Tether optimization shows that thin tapes have greater propulsive efficiency and are less sensitive to plasma density variations in orbit than cylindrical tethers. The efficiency increases with tape length if some segment next to the power supply at the top is insulated to make the tether potential bias vanish at the lower end; multitape tethers must be used to keep the efficiency high at high thrust levels. The efficiency has a maximum for tether-hardware mass equal to the fraction of power-subsystem mass going into ohmic power, though the maximum is very flat. For space tugs, effects of induced-bias changes in orbit might need to be reduced by choosing a moderately large power-subsystem to tether-hardware mass ratio or by tracking the current-voltage characteristic of the solar array.

Electrodynamic tether applications and constraints

Propulsion and power generation by bare electrodynamic tethers are revisited in a unified way and issues and constraints are addressed. In comparing electrodynamic tethers, which do not use propellant, with other propellantconsuming systems, mission duration is a discriminator that defines crossover points for systems with equal initial masses. Bare tethers operating in low Earth orbit can be more competitive than optimum ion thrusters in missions exceeding two-three days for orbital deboost and three weeks for boosting operations. If the tether produces useful onboard power during deboost, the crossover point reaches to about 10 days. Power generation by means of a bare electrodynamic tether in combination with chemical propulsion to maintain orbital altitude of the system is more efficient than use of the same chemicals (liquid hydrogen and liquid oxygen) in a fuel cell to produce power for missions longer than one week. Issues associated with tether temperature, bowing, deployment, and arcing are also discussed. Heating/cooling rates reach about 4 K/s for a 0.05-mm-thick tape and a fraction of Kelvin/second for the ProSEDS (0.6-mm-radius) wire; under dominant ohmic effects, temperatures areover200K (night) and 380 K (day) for the tape and 320 and 415 K for that wire. Tether applications other than propulsion and power are briefly discussed.

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

Far infrared photoconductivity in a silicon based material: vanadium supersaturated silicon

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory.

Lifetime improvement after phosphorous diffusion gettering on upgraded metallurgical grade silicon

Wide experimental evidence of the phosphorus diffusion gettering beneficial effect on solar grade silicon is found by measuring electron effective lifetime and interstitial iron concentration in as-grown and post processed samples from two ingots of upgraded metallurgical grade silicon produced by Ferrosolar. Results after two different P-diffusion processes are compared: P emitter diffusion at 850ºC followed by fast cool-down (called “standard process”) or followed by slow cool-down (called “extended process”). It is shown that final lifetimes of this low cost material are in the range of those obtained with conventional material. The extended process can be beneficial for wafers with specific initial distribution and concentration of iron, e.g. materials with high concentration of big Fe precipitates, while for other cases the standard process is enough efficient. An analysis based on the comparison of measured lifetime and dissolved iron concentration with theoretical calculations helps to infer the initial iron distribution and concentration, and according to that, choose the more effective type of gettering.

Analysis of tape tether survival in LEO against orbital debris

The low earth orbit (LEO) environment contains a large number of artificial debris, of which a significant portion is due to dead satellites and fragments of satellites resulted from explosions and in-orbit collisions. Deorbiting defunct satellites at the end of their life can be achieved by a successful operation of an Electrodynamic Tether (EDT) system. The effectiveness of an EDT greatly depends on the survivability of the tether, which can become debris itself if cut by debris particles; a tether can be completely cut by debris having some minimal diameter. The objective of this paper is to develop an accurate model using power laws for debris-size ranges, in both ORDEM2000 and MASTER2009 debris flux models, to calculate tape tether survivability. The analytical model, which depends on tape dimensions (width, thickness) and orbital parameters (inclinations, altitudes) is then verified with fully numerical results to compare for different orbit inclinations, altitudes and tape width for both ORDEM2000 and MASTER2009 flux data.