Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

Silicon wafers comprise approximately 40% of crystalline silicon module cost, and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. To accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.

Deposition reactors for solar grade silicon: a comparative thermal analysis of a Siemens reactor and a fluidized bed reactor

Polysilicon production costs contribute approximately to 25-33% of the overall cost of the solar panels and a similar fraction of the total energy invested in their fabrication. Understanding the energy losses and the behaviour of process temperature is an essential requirement as one moves forward to design and build large scale polysilicon manufacturing plants. In this paper we present thermal models for two processes for poly production, viz., the Siemens process using trichlorosilane (TCS) as precursor and the fluid bed process using silane (monosilane, MS).We validate the models with some experimental measurements on prototype laboratory reactors relating the temperature profiles to product quality. A model sensitivity analysis is also performed, and the efects of some key parameters such as reactor wall emissivity, gas distributor temperature, etc., on temperature distribution and product quality are examined. The information presented in this paper is useful for further understanding of the strengths and weaknesses of both deposition technologies, and will help in optimal temperature profiling of these systems aiming at lowering production costs without compromising the solar cell quality.

Understanding and improving the chemical vapor deposition process for solar grade silicon production

Esta Tesis Doctoral se centra en la investigación del proceso de producción de polisilicio para aplicaciones fotovoltaicas (FV) por la vía química; mediante procesos de depósito en fase vapor (CVD). El polisilicio para la industria FV recibe el nombre de silicio de grado solar (SoG Si). Por un lado, el proceso que domina hoy en día la producción de SoG Si está basado en la síntesis, destilación y descomposición de triclorosilano (TCS) en un reactor CVD -denominado reactor Siemens-. El material obtenido mediante este proceso es de muy alta pureza, pero a costa de un elevado consumo energético. Así, para alcanzar los dos principales objetivos de la industria FV basada en silicio, bajos costes de producción y bajo tiempo de retorno de la energía invertida en su fabricación, es esencial disminuir el consumo energético de los reactores Siemens. Por otro lado, una alternativa al proceso Siemens considera la descomposición de monosilano (MS) en un reactor de lecho fluidizado (FBR). Este proceso alternativo tiene un consumo energético mucho menor que el de un reactor Siemens, si bien la calidad del material resultante es también menor; pero ésta puede ser suficiente para la industria FV. A día de hoy los FBR deben aún abordar una serie de retos para que su menor consumo energético sea una ventaja suficiente comparada con otras desventajas de estos reactores. En resumen, la investigación desarrollada se centra en el proceso de depósito de polysilicio por CVD a partir de TCS -reactor Siemens-; pero también se investiga el proceso de producción de SoG Si en los FBR exponiendo las fortalezas y debilidades de esta alternativa. Para poder profundizar en el conocimiento del proceso CVD para la producción de polisilicio es clave el conocimiento de las reacciones químicas fundamentales y cómo éstas influencian la calidad del producto resultante, al mismo tiempo que comprender los fenómenos responsables del consumo energético. Por medio de un reactor Siemens de laboratorio en el que se llevan a cabo un elevado número de experimentos de depósito de polisilicio de forma satisfactoria se adquiere el conocimiento previamente descrito. Se pone de manifiesto la complejidad de los reactores CVD y de los problemas asociados a la pérdidas de calor de estos procesos. Se identifican las contribuciones a las pérdidas de calor de los reactores CVD, éstas pérdidas de calor son debidas principalmente a los fenómenos de radiación y, conducción y convección vía gases. En el caso de los reactores Siemens el fenómeno que contribuye en mayor medida al alto consumo energético son las pérdidas de calor por radiación, mientras que en los FBRs tanto la radiación como el calor transferido por transporte másico contribuyen de forma importante. Se desarrolla un modelo teórico integral para el cálculo de las pérdidas de calor en reactores Siemens. Este modelo está formado a su vez por un modelo para la evaluación de las pérdidas de calor por radiación y modelos para la evaluación de las pérdidas de calor por conducción y convección vía gases. Se ponen de manifiesto una serie de limitaciones del modelo de pérdidas de calor por radiación, y se desarrollan una serie de modificaciones que mejoran el modelo previo. El modelo integral se valida por medio un reactor Siemens de laboratorio, y una vez validado se presenta su extrapolación a la escala industrial. El proceso de conversión de TCS y MS a polisilicio se investiga mediante modelos de fluidodinámica computacional (CFD). Se desarrollan modelados CFD para un reactor Siemens de laboratorio y para un prototipo FBR. Los resultados obtenidos mediante simulación son comparados, en ambos casos, con resultados experimentales. Los modelos desarrollados se convierten en herramientas para la identificación de aquellos parámetros que tienen mayor influencia en los procesos CVD. En el caso del reactor Siemens, ambos modelos -el modelo integral y el modelado CFD permiten el estudio de los parámetros que afectan en mayor medida al elevado consumo energético, y mediante su análisis se sugieren modificaciones para este tipo de reactores que se traducirían en un menor número de kilovatios-hora consumidos por kilogramo de silicio producido. Para el caso del FBR, el modelado CFD permite analizar el efecto de una serie de parámetros sobre la distribución de temperaturas en el lecho fluidizado; y dicha distribución de temperaturas está directamente relacionada con los principales retos de este tipo de reactores. Por último, existen nuevos conceptos de depósito de polisilicio; éstos se aprovechan de la ventaja teórica de un mayor volumen depositado por unidad de tiempo -cuando una mayor superficie de depósito está disponible- con el objetivo de reducir la energía consumida por los reactores Siemens. Estos conceptos se exploran mediante cálculos teóricos y pruebas en el reactor Siemens de laboratorio. ABSTRACT This Doctoral Thesis comprises research on polysilicon production for photovoltaic (PV) applications through the chemical route: chemical vapor deposition (CVD) process. PV polysilicon is named solar grade silicon (SoG Si). On the one hand, the besetting CVD process for SoG Si production is based on the synthesis, distillation, and decomposition of thriclorosilane (TCS) in the so called Siemens reactor; high purity silicon is obtained at the expense of high energy consumption. Thus, lowering the energy consumption of the Siemens process is essential to achieve the two wider objectives for silicon-based PV technology: low production cost and low energy payback time. On the other hand, a valuable variation of this process considers the use of monosilane (MS) in a fluidized bed reactor (FBR); lower output material quality is obtained but it may fulfil the requirements for the PV industry. FBRs demand lower energy consumption than Siemens reactors but further research is necessary to address the actual challenges of these reactors. In short, this work is centered in polysilicon CVD process from TCS -Siemens reactor-; but it also offers insights on the strengths and weaknesses of the FBR for SoG Si production. In order to aid further development in polysilicon CVD is key the understanding of the fundamental reactions and how they influence the product quality, at the same time as to comprehend the phenomena responsible for the energy consumption. Experiments conducted in a laboratory Siemens reactor prove the satisfactory operation of the prototype reactor, and allow to acquire the knowledge that has been described. Complexity of the CVD reactors is stated and the heat loss problem associated with polysilicon CVD is addressed. All contributions to the energy consumption of Siemens reactors and FBRs are put forward; these phenomena are radiation and, conduction and convection via gases heat loss. In a Siemens reactor the major contributor to the energy consumption is radiation heat loss; in case of FBRs radiation and heat transfer due to mass transport are both important contributors. Theoretical models for radiation, conduction and convection heat loss in a Siemens reactor are developed; shaping a comprehensive theoretical model for heat loss in Siemens reactors. Limitations of the radiation heat loss model are put forward, and a novel contribution to the existing model is developed. The comprehensive model for heat loss is validated through a laboratory Siemens reactor, and results are scaled to industrial reactors. The process of conversion of TCS and MS gases to solid polysilicon is investigated by means of computational fluid-dynamics models. CFD models for a laboratory Siemens reactor and a FBR prototype are developed. Simulated results for both CVD prototypes are compared with experimental data. The developed models are used as a tool to investigate the parameters that more strongly influence both processes. For the Siemens reactors, both, the comprehensive theoretical model and the CFD model allow to identify the parameters responsible for the great power consumption, and thus, suggest some modifications that could decrease the ratio kilowatts-hour per kilogram of silicon produced. For the FBR, the CFD model allows to explore the effect of a number of parameters on the thermal distribution of the fluidized bed; that is the main actual challenge of these type of reactors. Finally, there exist new deposition surface concepts that take advantage of higher volume deposited per time unit -when higher deposition area is available- trying to reduce the high energy consumption of the Siemens reactors. These novel concepts are explored by means of theoretical calculations and tests in the laboratory Siemens prototype.

Analysis and design of reconfigurable multimode multiport microstrip antennas for mimo systems and diversity schemes

Las comunicaciones inalámbricas han transformado profundamente la forma en la que la gente se comunica en el día a día y es, sin lugar a dudas, una de las tecnologías de nuestro tiempo que más rápidamente evoluciona. Este rápido crecimiento implica retos enormes en la tecnología subyacente, debido y entre otros motivos, a la gran demanda de capacidad de los nuevos servicios inalámbricos. Los sistemas Multiple Input Multiple Output (MIMO) han despertado mucho interés como medio de mejorar el rendimiento global del sistema, satisfaciendo de este modo y en cierta medida los nuevo requisitos exigidos. De hecho, el papel relevante de esta tecnología en los actuales esfuerzos de estandarización internacionales pone de manifiesto esta utilidad. Los sistemas MIMO sacan provecho de los grados de libertad espaciales, disponibles a través del entorno multitrayecto, para mejorar el rendimiento de la comunicación con una destacable eficiencia espectral. Con el fin de alcanzar esta mejora en el rendimiento, la diversidad espacial y por diagrama han sido empleadas tradicionalmente para reducir la correlación entre los elementos radiantes, ya que una correlación baja es condición necesaria, si bien no suficiente, para dicha mejora. Tomando como referencia, o punto de partida, las técnicas empleadas para obtener diversidad por diagrama, esta tesis doctoral surge de la búsqueda de la obtención de diversidad por diagrama y/o multiplexación espacial a través del comportamiento multimodal de la antena microstrip, proponiendo para ello un modelo cuasi analítico original para el análisis y diseño de antenas microstrip multipuerto, multimodo y reconfigurables. Este novedoso enfoque en este campo, en vez de recurrir a simulaciones de onda completa por medio de herramientas comerciales tal y como se emplea en las publicaciones existentes, reduce significativamente el esfuerzo global de análisis y diseño, en este último caso por medio de guías de diseño generales. Con el fin de lograr el objetivo planteado y después de una revisión de los principales conceptos de los sistemas MIMO que se emplearán más adelante, se fija la atención en encontrar, implementar y verificar la corrección y exactitud de un modelo analítico que sirva de base sobre la cual añadir las mejoras necesarias para obtener las características buscadas del modelo cuasi analítico propuesto. Posteriormente y partiendo del modelo analítico base seleccionado, se exploran en profundidad y en diferentes entornos multitrayecto, las posibilidades en cuanto a rendimiento se refiere de diversidad por diagrama y multiplexación espacial, proporcionadas por el comportamiento multimodal de las antenas parche microstrip sin cargar. Puesto que cada modo de la cavidad tiene su propia frecuencia de resonancia, es necesario encontrar formas de desplazar la frecuencia de resonancia de cada modo empleado para ubicarlas en la misma banda de frecuencia, manteniendo cada modo al mismo tiempo tan independiente como sea posible. Este objetivo puede lograrse cargando adecuadamente la cavidad con cargas reactivas, o alterando la geometría del parche radiante. Por consiguiente, la atención en este punto se fija en el diseño, implementación y verificación de un modelo cuasi analítico para el análisis de antenas parche microstrip multipuerto, multimodo y cargadas que permita llevar a cabo la tarea indicada, el cuál es una de las contribuciones principales de esta tesis doctoral. Finalmente y basándose en el conocimiento adquirido a través del modelo cuasi analítico, se proporcionan y aplican guías generales para el diseño de antenas microstrip multipuerto, multimodo y reconfigurables para sistemas MIMO, con el fin de mejorar su diversidad por diagrama y/o su capacidad por medio del comportamiento multimodal de las antenas parche microstrip. Se debe destacar que el trabajo presentado en esta tesis doctoral ha dado lugar a una publicación en una revista técnica internacional de un alto factor de impacto. De igual manera, el trabajo también ha sido presentado en algunas de las más importantes conferencias internacionales en el ámbito de las antenas ABSTRACT Wireless communications have deeply transformed the way people communicate on daily basis and it is undoubtedly one of the most rapidly evolving technologies of our time. This fast growing behaviour involves huge challenges on the bearing technology, due to and among others reasons, the high demanding capacity of new wireless services. MIMO systems have given rise to considerable interest as a means to enhance the overall system performance, thus satisfying somehow the new demanding requirements. Indeed, the significant role of this technology on current international standardization efforts, highlights this usefulness. MIMO systems make profit from the spatial degrees of freedom available through the multipath scenario to improve the communication performance with a remarkable spectral efficiency. In order to achieve this performance improvement, spatial and pattern diversity have been traditionally used to decrease the correlation between antenna elements, as low correlation is a necessary but not sufficient condition. Taking as a reference, or starting point, the techniques used to achieve pattern diversity, this Philosophiae Doctor (Ph.D.) arises from the pursuit of obtaining pattern diversity and/or spatial multiplexing capabilities through the multimode microstrip behaviour, thus proposing a novel quasi analytical model for the analysis and design of reconfigurable multimode multiport microstrip antennas. This innovative approach on this field, instead of resorting to full-wave simulations through commercial tools as done in the available publications, significantly reduces the overall analysis and design effort, in this last case through comprehensive design guidelines. In order to achieve this goal and after a review of the main concepts of MIMO systems which will be followed used, the spotlight is fixed on finding, implementing and verifying the correctness and accuracy of a base quasi analytical model over which add the necessary enhancements to obtain the sought features of the quasi analytical model proposed. Afterwards and starting from the base quasi analytical model selected, the pattern diversity and spatial multiplexing performance capabilities provided by the multimode behaviour of unloaded microstrip patch antennas under different multipath environments are fully explored. As each cavity mode has its own resonant frequency, it is required to find ways to displace the resonant frequency of each used mode to place them at the same frequency band while keeping each mode as independent as possible. This objective can be accomplished with an appropriate loading of the cavity with reactive loads, or through the alteration of the geometry of the radiation patch. Thus, the focus is set at this point on the design, implementation and verification of a quasi analytical model for the analysis of loaded multimode multiport microstrip patch antennas to carry out the aforementioned task, which is one of the main contributions of this Ph.D. Finally and based on the knowledge acquired through the quasi analytical model, comprehensive guidelines to design reconfigurable multimode MIMO microstrip antennas to improve the spatial multiplexing and/or diversity system performance by means of the multimode microstrip patch antenna behaviour are given and applied. It shall be highlighted that the work presented in this Ph.D. has given rise to a publication in an international technical journal of high impact factor. Moreover, the work has also been presented at some of the most important international conferences in antenna area.

High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si. The lifetime in the remainder of HPMC-Si material is found to be limited by grain-boundary recombination. To reduce the recombination activity of grain boundaries in HPMC-Si, coordinated impurity control during growth, gettering, and passivation must be developed.

How do Impurity Inclusions Influence the Mechanical Properties of Multicrystalline Silicon?

The purpose of this research is to characterise the mechanical properties of multicrystalline silicon for photovoltaic applications that was crystallised from silicon feedstock with a high content of several types of impurities. The mechanical strength, fracture toughness and elastic modulus were measured at different positions within a multicrystalline silicon block to quantify the effect of impurity segregation on these mechanical properties. The microstructure and fracture surfaces of the samples was exhaustively analysed with a scanning electron microscope in order to correlate the values of mechanical properties with material microstructure. Fracture stresses values were treated statistically via the Weibull statistics. The results of this research show that metals segregate to the top of the block, produce moderate microcracking and introduce high thermal stresses. Silicon oxide is produced at the bottom part of the silicon block, and its presence significantly reduces the mechanical strength and fracture toughness of multicrystalline silicon due to both thermal and elastic mismatch between silicon and the silicon oxide inclusions. Silicon carbide inclusions from the upper parts of the block increase the fracture toughness and elastic modulus of multicrystalline silicon. Additionally, the mechanical strength of multicrystalline silicon can increase when the radius of the silicon carbide inclusions is smaller than ~10 µm. The most damaging type of impurity inclusion for the multicrystalline silicon block studied in this work was amorphous silicon oxide. The oriented precipitation of silicon oxide at grain and twin boundaries eases the formation of radial cracks between inclusions and decreases significatively the mechanical strength of multicrystalline silicon. The second most influencing type of impurity inclusions were metals like aluminium and copper, that cause spontaneous microcracking in their surroundings after the crystallisation process, therefore reducing the mechanical response of multicrystalline silicon. Therefore, solar cell producers should pay attention to the content of metals and oxygen within the silicon feedstock in order to produce solar cells with reliable mechanical properties.