Nonlinear Dynamics in experimental devices with compressed/expanded surfactant monolayers

A theory is provided for a common experimental set up that is used to measure surface properties in surfactant monolayers. The set up consists of a surfactant monolayer (over a shallow liquid layer) that is compressed/expanded in a periodic fashion by moving in counter-phase two parallel, slightly immersed solid barriers, which vary the free surface area and thus the surfactant concentration. The simplest theory ignores the fluid dynamics in the bulk fluid, assuming spatially uniform surfactant concentration, which requires quite small forcing frequencies and provides reversible dynamics in the compression/expansion cycles. In this paper, we present a long-wave theory for not so slow oscillations that assumes local equilibrium but takes the fluid dynamics into account. This simple theory uncovers the physical mechanisms involved in the surfactant behavior and allows for extracting more information from each experimental run. The conclusion is that the fluid dynamics cannot be ignored, and that some irreversible dynamics could well have a fluid dynamic origin

Sensing Aeropolis. Urban air monitoring devices in Madrid, 2006-2010

Esta tesis examina las implicaciones técnicas, políticas y espaciales del aire urbano, y en concreto, de la calidad del aire, para tenerlo en cuenta desde una perspectiva arquitectónica. En oposición a formas de entender el aire como un vacío o como una metáfora, este proyecto propone abordarlo desde un acercamiento material y tecnológico, trayendo el entorno al primer plano y reconociendo sus múltiples agencias. Debido a la escasa bibliografía detectada en el campo de la arquitectura, el objetivo es construir un marco teórico-analítico para considerar el aire urbano. Para ello el trabajo construye Aeropolis, una metáfora heurística que describe el ensamblaje sociotecnico de la ciudad. Situada en la intersección de determinadas ramas de la filosofía de la cultura, los estudios sobre ciencia y tecnología y estudios feministas de la ciencia este nuevo paisaje conceptual ofrece una metodología y herramientas para abordar el objeto de estudio desde distintos ángulos. Estas herramientas metodológicas han sido desarrolladas en el contexto específico de Madrid, ciudad muy contaminada cuyo aire ha sido objeto de controversias políticas y sociales, y donde las políticas y tecnologías para reducir sus niveles no han sido exitosas. Para encontrar una implicación alternativa con el aire esta tesis propone un método de investigación de agentes invisibles a partir del análisis de sus dispositivos epistémicos. Se centra, en concreto, en los instrumentos que miden, visualizan y comunican la calidad del aire, proponiendo que no sólo lo representan, sino que son también instrumentos que diseñan el aire y la ciudad. La noción de “sensing” (en castellano medir y sentir) es expandida, reconociendo distintas prácticas que reconstruyen el aire de Madrid. El resultado de esta estrategia no es sólo la ampliación de los espacios desde los que relacionarnos con el aire, sino también la legitimación de prácticas existentes fuera de contextos científicos y administrativos, como por ejemplo prácticas relacionadas con el cuerpo, así como la redistribución de agencias entre más actores. Así, esta tesis trata sobre toxicidad, la Unión Europea, producción colaborativa, modelos de computación, dolores de cabeza, kits DIY, gases, cuerpos humanos, salas de control, sangre o políticos, entre otros. Los dispositivos que sirven de datos empíricos sirven como un ejemplo excepcional para investigar infraestructuras digitales, permitiendo desafiar nociones sobre Ciudades Inteligentes. La tesis pone especial atención en los efectos del aire en el espacio público, reconociendo los procesos de invisibilización que han sufrido sus infraestructuras de monitorización. Para terminar se exponen líneas de trabajo y oportunidades para la arquitectura y el diseño urbano a través de nuevas relaciones entre infraestructuras urbanas, el medio construido, espacios domésticos y públicos y humanos y no humanos, para crear nuevas ecologías políticas urbanas (queer). ABSTRACT This thesis examines the technical, political and spatial implications of urban air, and more specifically "air quality", in order to consider it from an architectural perspective. In opposition to understandings of the air either as a void or as a metaphor, this project proposes to inspect it from a material and technical approach, bringing the background to the fore and acknowledging its multiple agencies. Due to the scarce bibliography within the architectural field, its first aim is to construct a theoretical and analytical framework from which to consider urban air. For this purpose, the work attempts the construction of Aeropolis, a heuristic metaphor that describes the city's aero socio-material assemblage. Located at the intersection of certain currents in cultural philosophy, science and technology studies as well as feminist studies in technoscience, this framework enables a methodology and toolset to be extracted in order to approach the subject matter from different angles. The methodological tools stemming from this purpose-built framework were put to the test in a specific case study: Madrid, a highly polluted city whose air has been subject to political and social controversies, and where no effective policies or technologies have been successful in reducing its levels of pollution. In order to engage with the air, the thesis suggests a method for researching invisible agents by examining the epistemic devices involved. It locates and focuses on the instruments that sense, visualise and communicate urban air, claiming that they do not only represent it, but are also instruments that design the air and the city. The notion of "sensing" is then expanded by recognising different practices which enact the air in Madrid. The work claims that the result of this is not only the opening up of spaces for engagement but also the legitimisation of existing practices outside science and policymaking environments, such as embodied practices, as well as the redistribution of agency among more actors. So this is a thesis about toxicity, the European Union, collaborative production, scientific computational models, headaches, DIY kits, gases, human bodies, control rooms, blood, or politicians, among many others. The devices found throughout the work serve as an exceptional substrate for an investigation of digital infrastructures, enabling to challenge Smart City tropes. There is special attention paid to the effects of the air on the public space, acknowledging the silencing processes these infrastructures have been subjected to. Finally there is an outline of the opportunities arising for architecture and urban design when taking the air into account, to create new (queer) urban political ecologies between the air, urban infrastructures, the built environment, public and domestic spaces, and humans and more than humans.

Speed-independent gait identification for mobile devices

Due to the intensive use of mobile phones for diferent purposes, these devices usually contain condential information which must not be accessed by another person apart from the owner of the device. Furthermore, the new generation phones commonly incorporate an accelerometer which may be used to capture the acceleration signals produced as a result of owner s gait. Nowadays, gait identication in basis of acceleration signals is being considered as a new biometric technique which allows blocking the device when another person is carrying it. Although distance based approaches as Euclidean distance or dynamic time warping have been applied to solve this identication problem, they show di±culties when dealing with gaits at diferent speeds. For this reason, in this paper, a method to extract an average template from instances of the gait at diferent velocities is presented. This method has been tested with the gait signals of 34 subjects while walking at diferent motion speeds (slow, normal and fast) and it has shown to improve the performance of Euclidean distance and classical dynamic time warping.

Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices

Although everybody should know thatmeasurements are never performed directly onmaterials but on devices, this is not generally true. Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide. Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free fromsurface effects. By replacing this unjustified assumption with a propermodel forGaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces.

On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance per Carrier RK= h/q^2

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK/(2pi)

Synchronizing sound from different devices over a TCP network

Nowadays, we can send audio on the Internet for multiples uses like telephony, broadcast audio or teleconferencing. The issue comes when you need to synchronize the sound from different sources because the network where we are going to work could lose packets and introduce delay in the delivery. This can also come because the sound cards could be work in different speeds. In this project, we will work with two computers emitting sound (one will simulate the left channel (mono) of a stereo signal, and the other the right channel) and connected with a third computer by a TCP network. The last computer must get the sound from both computers and reproduce it in a speaker properly (without delay). So, basically, the main goal of the project is to synchronize multi-track sound over a network. TCP networks introduce latency into data transfers. Streaming audio suffers from two problems: a delay and an offset between the channels. This project explores the causes of latency, investigates the affect of the inter-channel offset and proposes a solution to synchronize the received channels. In conclusion, a good synchronization of the sound is required in a time when several audio applications are being developed. When two devices are ready to send audio over a network, this multi-track sound will arrive at the third computer with an offset giving a negative effect to the listener. This project has dealt with this offset achieving a good synchronization of the multitrack sound getting a good effect on the listener. This was achieved thanks to the division of the project into several steps having constantly a good vision of the problem, a good scalability and having controlled the latency at all times. As we can see in the chapter 4 of the project, a lack of synchronization over c. 100μs is audible to the listener. RESUMEN. A día de hoy, podemos transmitir audio a través de Internet por varios motivos como pueden ser: una llamada telefónica, una emisión de audio o una teleconferencia. El problema viene cuando necesitas sincronizar ese sonido producido por los diferentes orígenes ya que la red a la que nos vamos a conectar puede perder los paquetes y/o introducir un retardo en las entregas de los mismos. Así mismo, estos retardos también pueden venir producidos por las diferentes velocidades a las que trabajan las tarjetas de sonido de cada dispositivo. En este proyecto, se ha trabajado con dos ordenadores emitiendo sonido de manera intermitente (uno se encargará de simular el canal izquierdo (mono) de la señal estéreo emitida, y el otro del canal derecho), estando conectados a través de una red TCP a un tercer ordenador, el cual debe recibir el sonido y reproducirlo en unos altavoces adecuadamente y sin retardo (deberá juntar los dos canales y reproducirlo como si de estéreo de tratara). Así, el objetivo principal de este proyecto es el de encontrar la manera de sincronizar el sonido producido por los dos ordenadores y escuchar el conjunto en unos altavoces finales. Las redes TCP introducen latencia en la transferencia de datos. El streaming de audio emitido a través de una red de este tipo puede sufrir dos grandes contratiempos: retardo y offset, los dos existentes en las comunicaciones entre ambos canales. Este proyecto se centra en las causas de ese retardo, investiga el efecto que provoca el offset entre ambos canales y propone una solución para sincronizar los canales en el dispositivo receptor. Para terminar, una buena sincronización del sonido es requerida en una época donde las aplicaciones de audio se están desarrollando continuamente. Cuando los dos dispositivos estén preparados para enviar audio a través de la red, la señal de sonido multi-canal llegará al tercer ordenador con un offset añadido, por lo que resultará en una mala experiencia en la escucha final. En este proyecto se ha tenido que lidiar con ese offset mencionado anteriormente y se ha conseguido una buena sincronización del sonido multi-canal obteniendo un buen efecto en la escucha final. Esto ha sido posible gracias a una división del proyecto en diversas etapas que proporcionaban la facilidad de poder solucionar los errores en cada paso dando una importante visión del problema y teniendo controlada la latencia en todo momento. Como se puede ver en el capítulo 4 del proyecto, la falta de sincronización sobre una diferencia de 100μs entre dos canales (offset) empieza a ser audible en la escucha final.

Instabilities in hybrid liquid crystal optical bistable devices

In this paper we report some of the experimental results that can be obtained in the field of hybrid optical bistable devices when liquid crystals are employed as non linear materials. The advantages with respect to other materials are the very low voltages and power needed, compatibles with I.C.'s levels.

New active devices in optical fibre communications: optical bistable systems

In this paper will be identify some fundamental mechanisms concerning optical bistability in some active devices.

Development of a human movement monitoring system based on wearable devices

It is essential to remotely and continuously monitor the movements of individuals in many social areas, for example, taking care of aging people, physical therapy, athletic training etc. Many methods have been used, such as video record, motion analysis or sensor-based methods. Due to the limitations in remote communication, power consumption, portability and so on, most of them are not able to fulfill the requirements. The development of wearable technology and cloud computing provides a new efficient way to achieve this goal. This paper presents an intelligent human movement monitoring system based on a smartwatch, an Android smartphone and a distributed data management engine. This system includes advantages of wide adaptability, remote and long-term monitoring capacity, high portability and flexibility. The structure of the system and its principle are introduced. Four experiments are designed to prove the feasibility of the system. The results of the experiments demonstrate the system is able to detect different actions of individuals with adequate accuracy.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Depth filtering for auto-stereoscopic mobile devices

In this work we address a scenario where 3D content is transmitted to a mobile terminal with 3D display capabilities. We consider the use of 2D plus depth format to represent the 3D content and focus on the generation of synthetic views in the terminal. We evaluate different types of smoothing filters that are applied to depth maps with the aim of reducing the disoccluded regions. The evaluation takes into account the reduction of holes in the synthetic view as well as the presence of geometrical distortion caused by the smoothing operation. The selected filter has been included within an implemented module for the VideoLan Client (VLC) software in order to render 3D content from the 2D plus depth data format.

Low-cost manufacturing by fused filament fabrication of microwave waveguide passive devices for space applications

Presentación en poster de impresión 3D de guias de onda.

Design of equalized ROADMs devices with flexible bandwidth based on LCoS technology

This paper describes the theory, design, applications and performance of a new Reconfigurable Add-drop Multiplexer (ROADM) with flexible bandwidth allocation. The device can address several wavelengths at the input to four output fibers, according to the holograms stored in a SLM (Spatial Light Modulator), where all the outputs are equalized in power. All combinations of the input wavelengths are possible at the different output fibers. Each fiber has assigned all the signals with the same bandwidth; the possible bandwidths are 12.5GHz, 25GHz, 50GHz and 100GHz, according to ITU-T 694.1 Recommendation. It is possible to route several signals with different bandwidth in real time thanks to Liquid Crystal over Silicon (LCoS) technology.

A proposal for an Internet of Things-based monitoring system composed by low capability, open source and open hardware devices

The Internet of Things makes use of a huge disparity of technologies at very different levels that help one to the other to accomplish goals that were previously regarded as unthinkable in terms of ubiquity or scalability. If the Internet of Things is expected to interconnect every day devices or appliances and enable communications between them, a broad range of new services, applications and products can be foreseen. For example, monitoring is a process where sensors have widespread use for measuring environmental parameters (temperature, light, chemical agents, etc.) but obtaining readings at the exact physical point they want to be obtained from, or about the exact wanted parameter can be a clumsy, time-consuming task that is not easily adaptable to new requirements. In order to tackle this challenge, a proposal on a system used to monitor any conceivable environment, which additionally is able to monitor the status of its own components and heal some of the most usual issues of a Wireless Sensor Network, is presented here in detail, covering all the layers that give it shape in terms of devices, communications or services.

Application of user-centered design in the development of an atomated/assisted testing system for self-service devices

Automated Teller Machines (ATMs) are sensitive self-service systems that require important investments in security and testing. ATM certifications are testing processes for machines that integrate software components from different vendors and are performed before their deployment for public use. This project was originated from the need of optimization of the certification process in an ATM manufacturing company. The process identifies compatibility problems between software components through testing. It is composed by a huge number of manual user tasks that makes the process very expensive and error-prone. Moreover, it is not possible to fully automate the process as it requires human intervention for manipulating ATM peripherals. This project presented important challenges for the development team. First, this is a critical process, as all the ATM operations rely on the software under test. Second, the context of use of ATMs applications is vastly different from ordinary software. Third, ATMs’ useful lifetime is beyond 15 years and both new and old models need to be supported. Fourth, the know-how for efficient testing depends on each specialist and it is not explicitly documented. Fifth, the huge number of tests and their importance implies the need for user efficiency and accuracy. All these factors led us conclude that besides the technical challenges, the usability of the intended software solution was critical for the project success. This business context is the motivation of this Master Thesis project. Our proposal focused in the development process applied. By combining user-centered design (UCD) with agile development we ensured both the high priority of usability and the early mitigation of software development risks caused by all the technology constraints. We performed 23 development iterations and finally we were able to provide a working solution on time according to users’ expectations. The evaluation of the project was carried out through usability tests, where 4 real users participated in different tests in the real context of use. The results were positive, according to different metrics: error rate, efficiency, effectiveness, and user satisfaction. We discuss the problems found, the benefits and the lessons learned in the process. Finally, we measured the expected project benefits by comparing the effort required by the current and the new process (once the new software tool is adopted). The savings corresponded to 40% less effort (man-hours) per certification. Future work includes additional evaluation of product usability in a real scenario (with customers) and the measuring of benefits in terms of quality improvement.