34 resultados para external cavity semiconductor laser


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The coupling between solar light radiation and laser rod medium in a solar pumped laser affects the efficiency of the laser. To optimize the pumping system, simulation of the two-stage pumping system with a Fresnel lens and conic pumping cavity is carried out with Tracepro software. According to the power density distribution along the axis at focal place of the Fresnel lens, the diameter and position of the pumping cavity window and the distance of the window from the Fresnel lens are optimized. The power density distributions along the laser rod axis of different cavity lengths and different cavity tapers are also analyzed. The optimal structure of taper cavity is obtained. The mirror relecting cavity and ceramic cavity are introduced in detail.

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En el presente trabajo se propone un método para la medida y la estimación del error de la misma en la caracterización del factor de ensanchamiento de línea (parámetro α) de los láseres de semiconductor. La técnica propuesta se basa en el cálculo del parámetro α a partir de la medida de la intensidad y de la frecuencia instantánea de los pulsos generados por un laser de semiconductor conmutado en ganancia. El error de medida se estima mediante la comparación entre el espectro medido y el reconstruido utilizando los perfiles temporales de amplitud y fase de los pulsos generados. El método se ha aplicado a un laser DFB, obteniendo un error de medida menor del 5 %.

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Integrated master-oscillator power amplifiers driven under steady-state injection conditions are known to show a complex dynamics resulting in a variety of emission regimes. We present experimental results on the emission characteristics of a 1.5 µm distributed feedback tapered master-oscillator power-amplifier in a wide range of steady-state injection conditions, showing different dynamic behaviors. The study combines the optical and radio-frequency spectra recorded under different levels of injected current into the master oscillator and the power amplifier sections. Under low injection current of the master oscillator the correlation between the optical and radio-frequency spectral maps allows to identify operation regimes in which the device emission arises from either the master oscillator mode or from the compound cavity modes allowed by the residual reflectance of the amplifier front facet. The quasi-periodic occurrence of these emission regimes as a function of the amplifier current is interpreted in terms of a thermally tuned competition between the modes of the master oscillator and the compound cavity modes. Under high injection current of the masteroscillator, two different regimes alternate quasi-periodically as a function of the injected current in the power amplifier: a stable regime with a single mode emission at the master oscillator frequency, and an unstable and complex self-pulsating regime showing strong peaks in the radio-frequency spectra as well as multiple frequencies in the optical spectra.

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Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.