33 resultados para Tunnel diodes
Resumo:
This paper describes the experimental setup, procedure, and results obtained, concerning the dynamics of a body lying on a floor, attached to a hinge, and exposed to an unsteady flow, which is a model of the initiation of rotational motion of ballast stones due to the wind generated by the passing of a high-speed train. The idea is to obtain experimental data to support the theoretical model developed in Sanz-Andres and Navarro-Medina (J Wind Eng Ind Aerodyn 98, 772–783, (2010), aimed at analyzing the initial phase of the ballast train-induced-wind erosion (BATIWE) phenomenon. The experimental setup is based on an open circuit, closed test section, low-speed wind tunnel, with a new sinusoidal gust generator mechanism concept, designed and built at the IDR/UPM. The tunnel’s main characteristic is the ability to generate a flow with a uniform velocity profile and sinusoidal time fluctuation of the speed. Experimental results and theoretical model predictions are in good agreement.
Resumo:
In this work, we explain the behavior of multijunction solar cells under non-uniform (spatially and in spectral content) light profiles in general and in particular when Gaussian light profiles cause a photo-generated current density, which exceeds locally the peak current density of the tunnel junction. We have analyzed the implications on the tunnel junction's limitation, that is, in the loss of efficiency due to the appearance of a dip in the I–V curve. For that, we have carried out simulations with our three-dimensional distributed model for multijunction solar cells, which contemplates a full description of the tunnel junction and also takes into account the lateral resistances in the tunnel junction. The main findings are that the current density photo-generated spreads out through the lateral resistances of the device, mainly through the tunnel junction layers and the back contact. Therefore, under non-uniform light profiles these resistances are determinant not only to avoid the tunnel junction's limitation but also for mitigating losses in the fill factor. Therefore, taking into account these lateral resistances could be the key for jointly optimizing the concentrator photovoltaic system (concentrator optics, front grid layout and semiconductor structure)
Resumo:
This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.