3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

This paper describes a complete modelling of the perimeter recombination of GaAs diodes which solves most unknowns and suppresses the limitations of previous models. Because of the three dimensional nature of the implemented model, it is able to simulate real devices. GaAs diodes on two epiwafers with different base doping levels, sizes and geometries, namely square and circular are manufactured. The validation of the model is achieved by fitting the experimental measurements of the dark IV curve of the manufactured GaAs diodes. A comprehensive 3-D description of the occurring phenomena affecting the perimeter recombination is supplied with the help of the model. Finally, the model is applied to concentrator GaAs solar cells to assess the impact of their doping level, size and geometry on the perimeter recombination.

High brightness semiconductor lasers as transmitters for space lidar systems

High brightness semiconductor lasers are potential transmitters for future space lidar systems. In the framework of the European Project BRITESPACE, we propose an all-semiconductor laser source for an Integrated Path Differential Absorption lidar system for column-averaged measurements of atmospheric CO2 in future satellite missions. The complete system architecture has to be adapted to the particular emission properties of these devices using a Random Modulated Continuous Wave approach. We present the initial experimental results of the InGaAsP/InP monolithic Master Oscillator Power Amplifiers, providing the ON and OFF wavelengths close to the selected absorption line around 1572 nm.

Random-modulation cw lidar system for space-borne carbon dioxide remote sensing based on a high-brightness semiconductor laser

In this paper, we report on the progresses of the BRITESPACE Consortium in order to achieve space-borne LIDAR measurements of atmospheric carbon dioxide concentration based on an all semiconductor laser source at 1.57 ?m. The complete design of the proposed RM-CW IPDA LIDAR has been presented and described in detail. Complete descriptions of the laser module and the FSU have been presented. Two bended MOPAs, emitting at the sounding frequency of the on- and off- IPDA channels, have been proposed as the transmitter optical sources with the required high brightness. Experimental results on the bended MOPAs have been presented showing a high spectral purity and promising expectations on the high output power requirements. Finally, the RM-CW approach has been modelled and an estimation of the expected SNR for the entire system is presented. Preliminary results indicate that a CO2 retrieval precision of 1.5 ppm could be achieved with an average output power of 2 W for each channel.

Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices

The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.

Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.