Self-similar motion of laser half-space plasmas. II. Thermal waves and intermediate regimes

The one-dimensional self-similar motion of an initially cold, half-space plasma of electron density n,produced by the (anomalous) absorption of a laser pulse of irradiation

€~4'3, a qualitative discussion of how plasma behavior changes with a, is given.

Application of laser-induced plasma spectroscopy to the measurement of transition probabilities of Ca I

We present improved experimental transition probabilities for the optical Ca I 4s4p-4s4d and 4s4p-4p2multiplets. The values were determined with an absolute uncertainty of 10%. Transition probabilities have been determined by the branching ratios from the measurement of relative line intensities emitted by laser-induced plasma (LIP). The line intensities were obtained with the target (leadcalcium) placed in argon atmosphere at 6 Torr, recorded at a 2.5 µs delay from the laser pulse, which provides appropriate measurement conditions, and analysed between 350.0 and 550.0 nm. They are measured when the plasma reaches local thermodynamic equilibrium (LTE). The plasma is characterized by electron temperature (T) of 11400 K and an electron number density (Ne) of 1.1 x 1016 cm-3. The influence self-absorption has been estimated for every line, and plasma homogeneity has been checked. The values obtained were compared with previous experimental values in the literature. The method for measurement of transition probabilities using laser-induced plasma as spectroscopic source has been checked.

Ion charge number and flux saturation effects in the corona of a laser-irradiated pellet

The quasisteady structure of the corona of a laser-irradiated pellet is completely determined for arbitrary Z, (ion charge number} and re/ra (ratio of critical and ablation radii), and for heat-flux saturation factor/above approximately 0.04. The ion-to-electron temperature ratio at rc grows sensibly with Z,; all other quantities depend weakly and nonmonotonically on Z,. For rc /ra close to unity, and all Z, of interest (Z, < 47}, the flow is subsonic at rc. For a given laser power W, flux saturation may decrease (low/) or increase (high/) the ablation pressure Pa relative to the value obtained when saturation is not considered; in some cases a decrease in/with W fixed increases Pa. For intermediate^ ~0.1), Pa cc (W/r* )2/3 p\n\pc = critical density), independently of rc/ra; for/~0.6, Pa «s larger by a factor of about [rc/raf13. For rjra > 1.2 roughly, the mass ablation rate is C{Z,) [{m/kZ.f^Kr^Pl) l,\ independent of pc and/, and barely dependent on Z,(m, is ion mass; k, Boltzmann's constant; K, conductivity coefficient; and C, a tabulated function).

Magnetic and electric current morphoiogy in the plasma ejected by a laser-irradiated foil

A quasisteady model for the plasma ablated from a thick foil by a laser pulse, at low $lln $ and R /A i within a low, narrow range, is given (4, is absorbed intensity, /zL wavelength, R focalspot radius). An approximate analytical solution is given for the two-dimensional plasma dynamics. At large magnetic Reynolds number Rm, the morphology of the magnetic field shows features in agreement with recent results for high intensities. Current lines are open: electric current flows toward the spot near its axis, then turns and flows away. The efficiency of converting light energy into electric energy peaks at Rm- 1, both the validity of the model. and accuracy of the solution are discussed, The neighborhood of the spot boundary is analyzed in detail by extending classical Prandtl-Meyer results.

Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (FEM). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterisation of NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NW's diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectrum of Si NWs. It is demonstrated that the temperature increase induced by the laser beam plays a major role in shaping the Raman spectrum of Si NWs.

Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires

Raman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtainedRaman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtained

An initial study on atmospheric pressure ion transport by laser ionization and electrostatic fields.

Laser ionization of mixtures of gases at atmospheric pressure and the subsequent transport through electrostatic field is studied. A prototype is designed to perform the transport and detection of the ions. Relevance of the composition of the mixture of gases and ionization parameters is shown

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

Measurement of plasma electron density generated in an experiment of laser shock processing, utilizing the H­α­-line

In this work we have realized plasma diagnosis produced by Laser (LPP), by means of emission spectroscopy in a Laser Shock Processing (LSP). The LSP has been proposed as an alternative technology, competitive with classical surface treatments. The ionic species present in the plasma together with electron density and its temperature provide significant indicators of the degree of surface effect of the treated material. In order to analyze these indicators, we have realized spectroscopic studies of optical emission in the laser-generated plasmas in different situations. We have worked focusing on an aluminum sample (Al2024) in air and/or in LSP conditions (water flow) a Q-switched laser of Nd:YAG (λ = 1.06 μm, 10 ns of pulse duration, running at 10 Hz repetition rate). The pulse energy was set at 2,5 J per pulse. The electron density has been measured using, in every case, the Stark broadening of H Balmer α line (656.27 nm). In the case of the air, this measure has been contrasted with the value obtained with the line of 281.62 nm of Al II. Special attention has been paid to the self-absorption of the spectral lines used. The measures were realized with different delay times after the pulse of the laser (1–8 μs) and with a time window of 1 μs. In LSP the electron density obtained was between 1017 cm−3 for the shortest delays (4–6 μs), and 1016 cm−3 for the greatest delays (7,8 μs).

Bloche-Maxwell treatment of amplification of high harmonic seed in soft x-ray laser amplifiers in both direct and chirped amplifications

Seeding plasma-based softx-raylaser (SXRL) demonstrated diffraction-limited, fully coherent in space and in time beam but with energy not exceeding 1 μJ per pulse. Quasi-steady-state (QSS) plasmas demonstrated to be able to store high amount of energy and then amplify incoherent SXRL up to several mJ. Using 1D time-dependant Bloch–Maxwell model including amplification of noise, we demonstrated that femtosecond HHG cannot be efficiently amplified in QSS plasmas. However, using Chirped Pulse Amplification concept on HHG seed allows to extract most of the stored energy, reaching up to 5 mJ in fully coherent pulses that can be compressed down to 130 fs.

Laser Shock Microformingof Thin Metal Sheets with ns Lasers

Continuous and long-pulse lasers have been used for the forming of metal sheets in macroscopic mechanical applications. However, for the manufacturing of micro-electromechanical systems (MEMS), the use of ns laser pulses provides a suitable parameter matching over an important range of sheet components that, preserving the short interaction time scale required for the predominantly mechanical (shock) induction of deformation residual stresses, allows for the successful processing of components in a medium range of miniaturization without appreciable thermal deformation.. In the present paper, the physics of laser shock microforming and the influence of the different experimental parameters on the net bending angle are presented.

Stochastic homogenization of the laser intensity to improve the irradiation uniformity of capsules directly driven by thousands laser beams

Illumination uniformity of a spherical capsule directly driven by laser beams has been assessed numerically. Laser facilities characterized by ND = 12, 20, 24, 32, 48 and 60 directions of irradiation with associated a single laser beam or a bundle of NB laser beams have been considered. The laser beam intensity profile is assumed super-Gaussian and the calculations take into account beam imperfections as power imbalance and pointing errors. The optimum laser intensity profile, which minimizes the root-mean-square deviation of the capsule illumination, depends on the values of the beam imperfections. Assuming that the NB beams are statistically independents is found that they provide a stochastic homogenization of the laser intensity associated to the whole bundle, reducing the errors associated to the whole bundle by the factor  , which in turn improves the illumination uniformity of the capsule. Moreover, it is found that the uniformity of the irradiation is almost the same for all facilities and only depends on the total number of laser beams Ntot = ND × NB.

Materials Research for HiPER Laser Fusion Facilities: Chamber Wall, Structural Material and Final Optics

The European HiPER project aims to demonstrate commercial viability of inertial fusion energy within the following two decades. This goal requires an extensive Research &Development program on materials for different applications (e.g., first wall, structural components and final optics). In this paper we will discuss our activities in the framework of HiPER to develop materials studies for the different areas of interest. The chamber first wall will have to withstand explosions of at least 100 MJ at a repetition rate of 5-10 Hz. If direct drive targets are used, a dry wall chamber operated in vacuum is preferable. In this situation the major threat for the wall stems from ions. For reasonably low chamber radius (5-10 m) new materials based on W and C are being investigated, e.g., engineered surfaces and nanostructured materials. Structural materials will be subject to high fluxes of neutrons leading to deleterious effects, such as, swelling. Low activation advanced steels as well as new nanostructured materials are being investigated. The final optics lenses will not survive the extreme ion irradiation pulses originated in the explosions. Therefore, mitigation strategies are being investigated. In addition, efforts are being carried out in understanding optimized conditions to minimize the loss of optical properties by neutron and gamma irradiation

Laser Induced Heating of Group IV Nanowires

Semiconductor nanowires (NWs) are fundamental structures for nanoscale devices. The excitation of NWs with laser beams results in thermal effects that can substantially change the spectral shape of the spectroscopic data. In particular, the interpretation of the Raman spectrum is greatly influenced by excitation induced temperature. A study of the interaction of the NWs with the excitation laser beam is essential to interpret the spectra. We present herein a finite element analysis of the interaction between the laser beam and the NWs. The resultas are applied to the interpretation of the Raman spectrum of bundles of NWs

Optimization of laser-firing processes for silicon-heterojunction solar-cell back contacts

One of the key steps to achieve high efficiencies in amorphous/crystalline silicon photovoltaic structures is to design low-ohmic-resistance backcontacts with good passivation in the rear part of the cell. A well known approach to achieve this goal is to use laser-fired contact (LFC) processes in which a metal layer is fired through the dielectric to define good contacts with the semiconductor. However, and despite the fact that this approach has demonstrated to be extremely successful, there is still enough room for process improvement with an appropriate optimization. In this paper, a study focused on the optimal adjustment of the irradiation parameters to produce laser-fired contacts in a-Si:H/c-Si heterojunctionsolarcells is presented. We used samples consisting of crystalline-silicon (c-Si) wafers together with a passivation layer of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) deposited by plasma-enhanced chemical deposition (PECVD). Then, an aluminum layer was evaporated on both sides, the thickness of this layer varied from 0.2 to 1 μm in order to identify the optimal amount of Al required to create an appropriate contact. A q-switched Nd:YVO4laser source, λ = 532 nm, was used to locally fire the aluminum through the thin a-Si:H(i)-layers to form the LFC. The effects of laser fluences were analyzed using a comprehensive morphological and electrical characterization.