Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Stabilization of embankments on inclined surfaces by micropiles

Embankments constructed on hillsides can have serious problems of stability, generally created by the action of water com-bined with the inclination of the hillside. In order to increase the stability or correct problems of instability already present, there are various methods that can be used: surface and deep drainage, reinforcements with anchored beams, medium and large diameter piles, etc. Standing out among these systems (for its versatility) is the use of micropiles which ?sew? the embankment to a non-unstable area of the hillside. This paper presents research undertaken by means of a finite element code for studying the effect and stress of the micropiles, comparing the results with real measurements taken in the south of Spain.

Examining wheat yield sensitivity to temperature and precipitation changes for a large ensemble of crop models using impact response surfaces

Impact response surfaces (IRSs) depict the response of an impact variable to changes in two explanatory variables as a plotted surface. Here, IRSs of spring and winter wheat yields were constructed from a 25-member ensemble of process-based crop simulation models. Twenty-one models were calibrated by different groups using a common set of calibration data, with calibrations applied independently to the same models in three cases. The sensitivity of modelled yield to changes in temperature and precipitation was tested by systematically modifying values of 1981-2010 baseline weather data to span the range of 19 changes projected for the late 21st century at three locations in Europe.

Evaluation of the surface free energy of plant surfaces: toward standardizing the procedure

Plant surfaces have been found to have a major chemical and physical heterogeneity and play a key protecting role against multiple stress factors. During the last decade, there is a raising interest in examining plant surface properties for the development of biomimetic materials. Contact angle measurement of different liquids is a common tool for characterizing synthetic materials, which is just beginning to be applied to plant surfaces. However, some studies performed with polymers and other materials showed that for the same surface, different surface free energy values may be obtained depending on the number and nature of the test liquids analyzed, materials' properties, and surface free energy calculation methods employed. For 3 rough and 3 rather smooth plant materials, we calculated their surface free energy using 2 or 3 test liquids and 3 different calculation methods. Regardless of the degree of surface roughness, the methods based on 2 test liquids often led to the under- or over-estimation of surface free energies as compared to the results derived from the 3-Liquids method. Given the major chemical and structural diversity of plant surfaces, it is concluded that 3 different liquids must be considered for characterizing materials of unknown physico-chemical properties, which may significantly differ in terms of polar and dispersive interactions. Since there are just few surface free energy data of plant surfaces with the aim of standardizing the calculation procedure and interpretation of the results among for instance, different species, organs, or phenological states, we suggest the use of 3 liquids and the mean surface tension values provided in this study.

Silicon oxides as alignment surfaces for vertically-aligned nematics in photonic devices

A comparative study on alignment performance and microstructure of inorganic layers used for liquid crystal cell conditioning has been carried out. The study has focused on two specific materials, SiOx and SiO2, deposited under different conditions. The purpose was to establish a relationship between layer microstructure and liquid crystal alignment. The surface morphology has been studied by FESEM and AFM. An analysis on liquid crystal alignment, pretilt angle, response time, contrast ratio and the conditions to develop backflow effect (significant rise time increase due to pure homeotropic alignment) on vertically-aligned nematic cells has been carried out. A technique to overcome the presence of backflow has been identified. The full comparative study of SiOx and SiO2 layer properties and their influence over liquid crystal alignment and electrooptic response is presented.

Ricci flows on surfaces related to the Einstein weyl and Abelian vortex equations

There are described equations for a pair comprising a Riemannian metric and a Killing field on a surface that contain as special cases the Einstein Weyl equations (in the sense of D. Calderbank) and a real version of a special case of the Abelian vortex equations, and it is shown that the property that a metric solve these equations is preserved by the Ricci flow. The equations are solved explicitly, and among the metrics obtained are all steady gradient Ricci solitons (e.g. the cigar soliton) and the sausage metric; there are found other examples of eternal, ancient, and immortal Ricci flows, as well as some Ricci flows with conical singularities.

Temperature and precipitation effects on wheat yield across a European transect: a crop model ensemble analysis using impact response surfaces

This study explored the utility of the impact response surface (IRS) approach for investigating model ensemble crop yield responses under a large range of changes in climate. IRSs of spring and winter wheat Triticum aestivum yields were constructed from a 26-member ensemble of process-based crop simulation models for sites in Finland, Germany and Spain across a latitudinal transect. The sensitivity of modelled yield to systematic increments of changes in temperature (-2 to +9°C) and precipitation (-50 to +50%) was tested by modifying values of baseline (1981 to 2010) daily weather, with CO2 concentration fixed at 360 ppm. The IRS approach offers an effective method of portraying model behaviour under changing climate as well as advantages for analysing, comparing and presenting results from multi-model ensemble simulations. Though individual model behaviour occasionally departed markedly from the average, ensemble median responses across sites and crop varieties indicated that yields decline with higher temperatures and decreased precipitation and increase with higher precipitation. Across the uncertainty ranges defined for the IRSs, yields were more sensitive to temperature than precipitation changes at the Finnish site while sensitivities were mixed at the German and Spanish sites. Precipitation effects diminished under higher temperature changes. While the bivariate and multi-model characteristics of the analysis impose some limits to interpretation, the IRS approach nonetheless provides additional insights into sensitivities to inter-model and inter-annual variability. Taken together, these sensitivities may help to pinpoint processes such as heat stress, vernalisation or drought effects requiring refinement in future model development.

Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

PAPER Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries S Martin-Horcajo1, A Wang1, A Bosca1, M F Romero1, M J Tadjer1,2, A D Koehler2, T J Anderson2 and F Calle1 Published 11 February 2015 • © 2015 IOP Publishing Ltd Semiconductor Science and Technology, Volume 30, Number 3 Article PDF Figures References Citations Metrics 350 Total downloads Cited by 1 articles Export citation and abstract BibTeX RIS Turn on MathJax Share this article Article information Abstract Trapping effects were evaluated by means of pulsed measurements under different quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an AlGaN barrier underwent an increase in the on-resistance, and a drain current and transconductance reduction without measurable threshold voltage change, suggesting the location of the traps in the gate-drain access region. In contrast, devices with an InAlN barrier showed a transconductance and a decrease in drain associated with a significant positive shift of threshold voltage, indicating that the traps were likely located under the gate region; as well as an on-resistance degradation probably associated with the presence of surface traps in the gate-drain access region. Furthermore, measurements of drain current transients at different ambient temperatures revealed that the activation energy of electron traps was 0.43 eV and 0.38 eV for AlGaN and InAlN barrier devices, respectively. Experimental and simulation results demonstrated the influence of device geometry on the observed trapping effects, since devices with larger gate lengths and gate-to-drain distance values exhibited less noticeable charge trapping effects.