All-optical logic gates with 1550nm Fabry-Perot and distributed feedback semiconductor laser amplifiers

The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.

Wavelength monitoring with semiconductor laser amplifiers

The semiconductor laser diodes that are typically used in applications of optical communications, when working as amplifiers, present under certain conditions optical bistability, which is characterized by abruptly switching between two different output states and an associated hysteresis cycle. This bistable behavior is strongly dependent on the frequency detuning between the frequency of the external optical signal that is injected into the semiconductor laser amplifier and its own emission frequency. This means that small changes in the wavelength of an optical signal applied to a laser amplifier causes relevant changes in the characteristics of its transfer function in terms of the power requirements to achieve bistability and the width of the hysteresis. This strong dependence in the working characteristics of semiconductor laser amplifiers on frequency detuning suggest the use of this kind of devices in optical sensing applications for optical communications, such as the detection of shifts in the emission wavelength of a laser, or detect possible interference between adjacent channels in DWDM (Dense Wavelength Division Multiplexing) optical communication networks

Láseres de semiconductor: teoría y aplicaciones

Aunque los láseres de semiconductor constituyen la antítesis de lo que convencionalmente es la imagen de un láser, su uso y aplicaciones comienzan a estar tan extendidos que es seguro que dentro de muy pocos años el número de los que estarán en funcionamiento será superior al de todas las otras familias láser actualmente conocidas. La razón de lo anterior es que constituyen, como veremos, la base de los sistemas de comunicaciones ópticas que se están desarrollando en todo el mundo, así como de muchos sistemas de control y, posiblemente, de algunas fases de los computadores ópticos que puedan desarrollarse en el futuro. El láser de semiconductor no emite, por lo general, el típico haz casi perfectamente paralelo que se propaga en línea recta sin apenas divergencia, ni incluso puede llegar a verse, ya que, normalmente, va a trabajar en el infrarrojo. Pero a pesar de ello, o mejor dicho, gracias a ello, es la fuente luminosa idónea para trabajar en conjunción con las fibras ópticas. El desarrollo, por otra parte, de toda la tecnología microelectrónica que puede ser aplicada a él de manera inmediata, hace que no sea necesario desarrollar nuevas técnicas para obtener de él lo que se desee. Finalmente, su tamaño y consumo de potencia, hacen de él el elemento más asequible para poder ser introducido dentro de una serie de sistemas donde esos dos parámetros sean imprescindibles. Su estudio, su desarrollo y cómo utilizarlo constituyen en consecuencia, necesidades que pueden ser esenciales en múltiples ocasiones

In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

Vertical-cavity semiconductor optical amplifiers (VCSOAs) as optical sensing elements

Semiconductor Optical Amplifiers (SOAs) have mainly found application in optical telecommunication networks for optical signal regeneration, wavelength switching or wavelength conversion. The objective of this paper is to report the use of semiconductor optical amplifiers for optical sensing taking into account their optical bistable properties. As it was previously reported, some semiconductor optical amplifiers, including Fabry-Perot and Distributed-Feedback Semiconductor Optical Amplifiers (FPSOAs and DFBSOAs), may exhibit optical bistability. The characteristics of the attained optical bistability in this kind of devices are strongly dependent on different parameters including wavelength, temperature or applied bias current and small variations lead to a change on their bistable properties. As in previous analyses for Fabry-Perot and DFB SOAs, the variations of these parameters and their possible application for optical sensing are reported in this paper for the case of the Vertical-Cavity Semiconductor Optical Amplifier (VCSOA). When using a VCSOA, the input power needed for the appearance of optical bistability is one order of magnitude lower than that needed in edge-emitting devices. This feature, added to the low manufacturing costs of VCSOAs and the ease to integrate them in 2-D arrays, makes the VCSOA a very promising device for its potential use in optical sensing applications.

Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (FEM). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterisation of NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NW's diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectrum of Si NWs. It is demonstrated that the temperature increase induced by the laser beam plays a major role in shaping the Raman spectrum of Si NWs.

UWB doublet generation employing cross-phase modulation in a semiconductor optical amplifier mach-zehnder interferometer

In this paper, a novel method to generate ultrawideband (UWB) doublets is proposed and experimentally demonstrated, which is based on exploiting the cross-phase modulation in a semiconductor optical amplifier (SOA). The key component is an integrated SOA Mach-Zehnder interferometer pumped with an optical carrier modulated by a Gaussian pulse. The transfer function of the nonlinear conversion process leads to the generation of UWB doublet pulses by tuning the SOA currents to different values.

UWB doublet generation employing non-linear effects of a Semiconductor Optical Amplifier Mach-Zehnder inteferometer

In this article, a novel method to generate an ultra-wideband (UWB) doublet using the cross-phase modulation (XPM) effect is proposed and experimentally demonstrated. The main component of the submitted architecture is a SOA-Mach-Zehnder interferometer (MZI) pumped with a modulated Gaussian pulse. Maximum and minimum conversion points are analyzed through the systems transfer function in order to determinate the most effective operation stage. By tuning different values for the SOAs currents, it is possible to identify a conversion step in which the input pulse is enough large to saturate the SOAMZI, leading to the generation of a UWB doublet pulse.

UWB doublet generation in an integrated semiconductor optical amplifier Mach-Zehnder interferometer

In this paper, we propose and experimentally demonstrate a novel technique to generate ultrawideband (UWB) doublet pulses by exploiting the cross-phase modulation (XPM) in a semiconductor optical amplifier (SOA). The key component in the proposed system consists on an integrated SOA Mach-Zehnder interferometer (MZI) pumped with a Gaussian pulse modulated optical carrier. The transfer function of the nonlinear conversion process leads to the generation of UWB doublet pulses through the control of the biasing point of the SOA-MZI.

Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires

Raman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtainedRaman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtained

Web based interactive educational software introducing semiconductor laser dynamics: Sound Of Lasers (SOL)

In this work, educational software for intuitive understanding of the basic dynamic processes of semiconductor lasers is presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of thpoint. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the “chirp” phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters,consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

Estimación del error en la medida del factor de ensanchamiento de línea en láseres de semiconductor

En el presente trabajo se propone un método para la medida y la estimación del error de la misma en la caracterización del factor de ensanchamiento de línea (parámetro α) de los láseres de semiconductor. La técnica propuesta se basa en el cálculo del parámetro α a partir de la medida de la intensidad y de la frecuencia instantánea de los pulsos generados por un laser de semiconductor conmutado en ganancia. El error de medida se estima mediante la comparación entre el espectro medido y el reconstruido utilizando los perfiles temporales de amplitud y fase de los pulsos generados. El método se ha aplicado a un laser DFB, obteniendo un error de medida menor del 5 %.

Effect of van der Waals interaction on the properties of SnS2 layered semiconductor

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included.

Highly conductive p++-AlGaAs/n ++-GaInP tunnel junctions for ultra-high concentrator solar cells

Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentration applications. We have developed a highly conductive, high bandgap p  + + -AlGaAs/n  + + -GaInP tunnel junction with a peak tunneling current density for as-grown and thermal annealed devices of 996 A/cm 2 and 235 A/cm 2, respectively. The J–V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra-high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice-matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm 2 with respect to previous designs.