27 resultados para SOLAR ACTIVE-REGION
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Nowadays one of the challenges of materials science is to find new technologies that will be able to make the most of renewable energies. An example of new proposals in this field are the intermediate-band (IB) materials, which promise higher efficiencies in photovoltaic applications (through the intermediate band solar cells), or in heterogeneous photocatalysis (using nanoparticles of them, for the light-induced degradation of pollutants or for the efficient photoevolution of hydrogen from water). An IB material consists in a semiconductor in which gap a new level is introduced [1], the intermediate band (IB), which should be partially filled by electrons and completely separated of the valence band (VB) and of the conduction band (CB). This scheme (figure 1) allows an electron from the VB to be promoted to the IB, and from the latter to the CB, upon absorption of photons with energy below the band gap Eg, so that energy can be absorbed in a wider range of the solar spectrum and a higher current can be obtained without sacrificing the photovoltage (or the chemical driving force) corresponding to the full bandgap Eg, thus increasing the overall efficiency. This concept, applied to photocatalysis, would allow using photons of a wider visible range while keeping the same redox capacity. It is important to note that this concept differs from the classic photocatalyst doping principle, which essentially tries just to decrease the bandgap. This new type of materials would keep the full bandgap potential but would use also lower energy photons. In our group several IB materials have been proposed, mainly for the photovoltaic application, based on extensively doping known semiconductors with transition metals [2], examining with DFT calculations their electronic structures. Here we refer to In2S3 and SnS2, which contain octahedral cations; when doped with Ti or V an IB is formed according to quantum calculations (see e.g. figure 2). We have used a solvotermal synthesis method to prepare in nanocrystalline form the In2S3 thiospinel and the layered compound SnS2 (which when undoped have bandgaps of 2.0 and 2.2 eV respectively) where the cation is substituted by vanadium at a ?10% level. This substitution has been studied, characterizing the materials by different physical and chemical techniques (TXRF, XRD, HR-TEM/EDS) (see e.g. figure 3) and verifying with UV spectrometry that this substitution introduces in the spectrum the sub-bandgap features predicted by the calculations (figure 4). For both sulphide type nanoparticles (doped and undoped) the photocatalytic activity was studied by following at room temperature the oxidation of formic acid in aqueous suspension, a simple reaction which is easily monitored by UV-Vis spectroscopy. The spectral response of the process is measured using a collection of band pass filters that allow only some wavelengths into the reaction system. Thanks to this method the spectral range in which the materials are active in the photodecomposition (which coincides with the band gap for the undoped samples) can be checked, proving that for the vanadium substituted samples this range is increased, making possible to cover all the visible light range. Furthermore it is checked that these new materials are more photocorrosion resistant than the toxic CdS witch is a well know compound frequently used in tests of visible light photocatalysis. These materials are thus promising not only for degradation of pollutants (or for photovoltaic cells) but also for efficient photoevolution of hydrogen from water; work in this direction is now being pursued.
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Ponencia Invitada presentada en el IEEE Region 8 Student Branch and GOLD Congress
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This paper presents a new methodology to build parametric models to estimate global solar irradiation adjusted to specific on-site characteristics based on the evaluation of variable im- portance. Thus, those variables higly correlated to solar irradiation on a site are implemented in the model and therefore, different models might be proposed under different climates. This methodology is applied in a study case in La Rioja region (northern Spain). A new model is proposed and evaluated on stability and accuracy against a review of twenty-two already exist- ing parametric models based on temperatures and rainfall in seventeen meteorological stations in La Rioja. The methodology of model evaluation is based on bootstrapping, which leads to achieve a high level of confidence in model calibration and validation from short time series (in this case five years, from 2007 to 2011). The model proposed improves the estimates of the other twenty-two models with average mean absolute error (MAE) of 2.195 MJ/m2 day and average confidence interval width (95% C.I., n=100) of 0.261 MJ/m2 day. 41.65% of the daily residuals in the case of SIAR and 20.12% in that of SOS Rioja fall within the uncertainty tolerance of the pyranometers of the two networks (10% and 5%, respectively). Relative differences between measured and estimated irradiation on an annual cumulative basis are below 4.82%. Thus, the proposed model might be useful to estimate annual sums of global solar irradiation, reaching insignificant differences between measurements from pyranometers.
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A methodology for downscaling solar irradiation from satellite-derived databases is described using R software. Different packages such as raster, parallel, solaR, gstat, sp and rasterVis are considered in this study for improving solar resource estimation in areas with complex topography, in which downscaling is a very useful tool for reducing inherent deviations in satellite-derived irradiation databases, which lack of high global spatial resolution. A topographical analysis of horizon blocking and sky-view is developed with a digital elevation model to determine what fraction of hourly solar irradiation reaches the Earth's surface. Eventually, kriging with external drift is applied for a better estimation of solar irradiation throughout the region analyzed. This methodology has been implemented as an example within the region of La Rioja in northern Spain, and the mean absolute error found is a striking 25.5% lower than with the original database.
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Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means of quantum dot (QD) superlattices. This novel photovoltaic concept allows the collection of a wider range of the sunlight spectrum in order to provide higher cell photocurrent while maintaining the open-circuit voltage (VOC) of the cell. In this work, we analyze InAs/GaAsN QD-IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (JL) versus VOC was measured under varied concentrated light intensity and temperature. We found that the VOC of the cell at 20 K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.
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With recent technological developments within the field of power conditioning and the progressive decrease of incentives for PV electricity in grid-connected markets, new operation modes for PV systems should be explored beyond the traditional maximization of PV electri city feed-in. An example can be found in the domestic sector, where the use of modern PV hybrid systems combin ed with efficient electrical appliances and demand side management strategies can significantly enhance the PV value for the user. This paper presents an active demand side management system able to displace the consumer’s load curve in response to local (PV hybrid system, user) and external conditions (external grid). In this way, th e consumer becomes an “active consumer” that can also cooperate with others and the grid, increasing even more the PV value for the electrical system.
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Activity of radon gas in natural soils is commonly low (in the order of few thousands of Bq·m-3) due to the fast decay (half-life= 3.8 days in the case of 222Rn) that prevents accumulation in soil pores. Exceptionally, high Rn soil activity (up to 430 KBq·m-3) is found around point sources of deep CO2 fluxes. These fluxes allow the transport of trace gases (including Rn) to long distances in the geosphere leading to a potential hazard as Rn accumulation in buildings. CO2 degassing is common in active or ancient volcanic fields and occurs as free gas fluxes or dissolved in groundwater. In this work, the occurrence of Rnbearing, CO2 fluxes from the Campo de Calatrava region in Central Spain has been studied in order to determine their (1) magnitude, (2) migration paths and (3) potential impact on the environment, and (4) methodologies to best detection and measurement.
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El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.
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In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p-n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I-V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I-V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.
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La presente tesis analiza el efecto del ejercicio físico agudo y la hidratación sobre las concentraciones de homocisteína total (tHcy) y su relación con los parámetros implicados en el metabolismo de la homocisteína como el folato, la vitamina B12, y la creatina en una muestra de varones jóvenes físicamente activos. El trabajo se basa en los resultados del estudio realizado en la Facultad de Ciencias de la Actividad Física y del Deporte de la Universidad Politécnica de Madrid. Para el cual se contó con un total de 29 voluntarios sanos físicamente activos de la Comunidad de Madrid. Los principales resultados de esta tesis son: a) Las concentraciones de tHcy aumentaron después del ejercicio agudo tanto tras una prueba de intensidad máxima (VO2max) como una submáxima (65 % of VO2max) en varones físicamente activos independientemente de las sus concentraciones basales de tHcy. b) Las concentraciones de tHcy disminuyeron 2 h después del ejercicio físico aeróbico submáximo tras aplicar un protocolo de hidratación con una bebida para deportistas. c) Un adecuado protocolo de hidratación durante el ejercicio físico agudo previno el aumento de las concentraciones de tHcy hasta 2 h después del ejercicio. d) Las concentraciones de tHcy aumentaron a las 6 h tras la finalización del ejercicio únicamente en los test en los que no se siguió un protocolo de hidratación durante el ejercicio físico. e) A las 24 h tras el ejercicio, las concentraciones de tHcy volvieron a los niveles basales independientemente de si se aplicó un protocolo de hidratación durante el ejercicio o no. f) Es necesario aclarar si existen mecanismos subyacentes relacionados con el riesgo cardiovascular debido al aumento transitorio de las concentraciones de tHcy inducidas por el ejercicio agudo. Se necesitan más estudios que analicen la relación entre las concentraciones de tHcy después del ejercicio físico agudo y la implicación de la creatina, vitamina B12 y folato como parámetros relacionados en el metabolismo de la homocisteína. El efecto agudo del ejercicio físico aumenta las concentraciones de tHcy por encima de los valores recomendados; sin embargo, un adecuado protocolo de hidratación mantiene las concentraciones a niveles basales y previene el posterior aumento en una muestra de varones adultos físicamente activos. ABSTRACT The current thesis analyzes the effect of exercise and hydration on total homocysteine (tHcy) concentrations and the relationship with the implicated parameters, like folate, vitamin B12, and creatine in physically active male adults. The work is based on the results of the study conducted at the Faculty of Physical Activity and Sport Sciences of the Technical University of Madrid. A total of 29 physically active voluntary healthy males from the Region of Madrid were recruited. The main outcomes of this thesis are: a) tHcy concentrations increased after acute exercise with both, maximal (VO2max) and submaximal (65 % of VO2max) tests in physically active male subjects independently of their baseline tHcy status. b) After 2 h of rehydration with a sport drink, tHcy concentrations, which had previously increased during an acute exercise, decreased significantly, although they didn´t recover to baseline values. c) An adequate hydration protocol during acute aerobic submaximal exercise prevents the increase of tHcy concentrations and maintains these concentrations at baseline up to 2 h post-exercise. d) Serum tHcy concentrations increased after submaximal exercise when the hydration protocol during exercise was not applied. Furthermore, tHcy concentrations reached maximal values 6 h after the end of exercise. e) At 24 h, tHcy concentrations recovered baseline values independently whether or not there was a hydration protocol during exercise. f) There is a need to clarify the underlying mechanisms related to cardiovascular risk due to the transient increase of tHcy concentrations induced by acute exercise. Further research analayzing the relationship between tHcy concentrations after acute exercise and the implication of creatine, vitamin B12 and folate as related parameters in the homocysteine metabolism is needed. Finally, tHcy concentrations increased above the recommended values after an acute aerobic submaximal exercise; nevertheless, a good hydration protocol maintains tHcy concentrations at baseline and prevents the further increase in a sample of physically active male adults.
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The coastal area between the mouths of the Aguas and Antas Rivers presents a deformed system of raised marine deposits, some of which have been strongly affected by active tectonics. The use of amino acid epimerization dating of Glycymeris shells from raised coastal deposits allowed determining the age of these marine deposits, all of them linked to highstand sea levels in the Mediterranean realm, with ages between MIS 11 and MIS 1. These results allowed corroborating the age of some previously studied sites, and using new sampling sites, the general aminostratigraphy for the Quaternary raised marine deposits on the Mediterranean coast was confirmed. The main deformation event took place after MIS 11 and continued until MIS 5, and was linked to the activity of the Palomares Faul
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The proliferation of video games and other applications of computer graphics in everyday life demands a much easier way to create animatable virtual human characters. Traditionally, this has been the job of highly skilled artists and animators that painstakingly model, rig and animate their avatars, and usually have to tune them for each application and transmission/rendering platform. The emergence of virtual/mixed reality environments also calls for practical and costeffective ways to produce custom models of actual people. The purpose of the present dissertation is bringing 3D human scanning closer to the average user. For this, two different techniques are presented, one passive and one active. The first one is a fully automatic system for generating statically multi-textured avatars of real people captured with several standard cameras. Our system uses a state-of-the-art shape from silhouette technique to retrieve the shape of subject. However, to deal with the lack of detail that is common in the facial region for these kind of techniques, which do not handle concavities correctly, our system proposes an approach to improve the quality of this region. This face enhancement technique uses a generic facial model which is transformed according to the specific facial features of the subject. Moreover, this system features a novel technique for generating view-independent texture atlases computed from the original images. This static multi-texturing system yields a seamless texture atlas calculated by combining the color information from several photos. We suppress the color seams due to image misalignments and irregular lighting conditions that multi-texturing approaches typically suffer from, while minimizing the blurring effect introduced by color blending techniques. The second technique features a system to retrieve a fully animatable 3D model of a human using a commercial depth sensor. Differently to other approaches in the current state of the art, our system does not require the user to be completely still through the scanning process, and neither the depth sensor is moved around the subject to cover all its surface. Instead, the depth sensor remains static and the skeleton tracking information is used to compensate the user’s movements during the scanning stage. RESUMEN La popularización de videojuegos y otras aplicaciones de los gráficos por ordenador en el día a día requiere una manera más sencilla de crear modelos virtuales humanos animables. Tradicionalmente, estos modelos han sido creados por artistas profesionales que cuidadosamente los modelan y animan, y que tienen que adaptar específicamente para cada aplicación y plataforma de transmisión o visualización. La aparición de los entornos de realidad virtual/mixta aumenta incluso más la demanda de técnicas prácticas y baratas para producir modelos 3D representando personas reales. El objetivo de esta tesis es acercar el escaneo de humanos en 3D al usuario medio. Para ello, se presentan dos técnicas diferentes, una pasiva y una activa. La primera es un sistema automático para generar avatares multi-texturizados de personas reales mediante una serie de cámaras comunes. Nuestro sistema usa técnicas del estado del arte basadas en shape from silhouette para extraer la forma del sujeto a escanear. Sin embargo, este tipo de técnicas no gestiona las concavidades correctamente, por lo que nuestro sistema propone una manera de incrementar la calidad en una región del modelo que se ve especialmente afectada: la cara. Esta técnica de mejora facial usa un modelo 3D genérico de una cara y lo modifica según los rasgos faciales específicos del sujeto. Además, el sistema incluye una novedosa técnica para generar un atlas de textura a partir de las imágenes capturadas. Este sistema de multi-texturización consigue un atlas de textura sin transiciones abruptas de color gracias a su manera de mezclar la información de color de varias imágenes sobre cada triángulo. Todas las costuras y discontinuidades de color debidas a las condiciones de iluminación irregulares son eliminadas, minimizando el efecto de desenfoque de la interpolación que normalmente introducen este tipo de métodos. La segunda técnica presenta un sistema para conseguir un modelo humano 3D completamente animable utilizando un sensor de profundidad. A diferencia de otros métodos del estado de arte, nuestro sistema no requiere que el usuario esté completamente quieto durante el proceso de escaneado, ni mover el sensor alrededor del sujeto para cubrir toda su superficie. Por el contrario, el sensor se mantiene estático y el esqueleto virtual de la persona, que se va siguiendo durante el proceso, se utiliza para compensar sus movimientos durante el escaneado.