Registration and fusion of contrast-enhanced MRI myocardial substrate maps and X-ray angiograms

The aim of this work is to provide the necessary methods to register and fuse the endo-epicardial signal intensity (SI) maps extracted from contrast-enhanced magnetic resonance imaging (ceMRI) with X-ray coronary ngiograms using an intrinsic registrationbased algorithm to help pre-planning and guidance of catheterization procedures. Fusion of angiograms with SI maps was treated as a 2D-3D pose estimation, where each image point is projected to a Plücker line, and the screw representation for rigid motions is minimized using a gradient descent method. The resultant transformation is applied to the SI map that is then projected and fused on each angiogram. The proposed method was tested in clinical datasets from 6 patients with prior myocardial infarction. The registration procedure is optionally combined with an iterative closest point algorithm (ICP) that aligns the ventricular contours segmented from two ventriculograms.

Laser induced forward transfer of silver pastes for printing of fingers in c-si cells.

The main objective of this work is to adapt the Laser Induced Forward Techniques (LIFT), a well- known laser direct writing technique for material transfer, to define metallic contacts (fingers and busbars) onto c-Si cells. The silver paste (with viscosity around 30-50 kcPs) is applied over a glass substrate using a coater. The thickness of the paste can be control changing the deposit parameters. The glass with the silver paste is set at a controlled gap over the c-Si cell. A solid state pulsed laser (532 nm) is focused at the glass/silver interface producing a droplet of silver that it is transferred to the c-Si cell. A scanner is used to print lines. The process parameters (silver paste thickness, gap and laser parameters -spot size, pulse energy and overlapping of pulses) are modified and the morphology of the lines is studied using confocal microscopy. Long lines are printed and the uniformity (in thickness and height) is studied. Some examples of metallization of larger areas (up to 10 cm x 10 cm) are presented.

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.