Recubrimientos recomendables por razones de durabilidad, a disponer en estructuras de hormigón sometidas a la clase específica de exposición Qb (ataque químico de intensidad media)

Es una realidad cada vez más aceptada que la durabilidad del hormigón es una propiedad igual de importante que la resistencia mecánica o la estabilidad de volumen. No es el objeto del presente trabajo ahondar en las causas de esta evidencia sino en contribuir a hacer del diseño de la durabilidad una materia incorporada al quehacer diario de los técnicos y especialistas. Solo si la durabilidad de una estructura se puede proyectar y verificar, será posible conseguir vidas útiles con una cierta garantía o seguridad en que se alcanzarán los periodos de servicio que se especifiquen. En el diseño de la durabilidad se ha dedicado mucho tiempo en el pasado a aclarar los mecanismos de ataque (por ejemplo: por sulfatos o por reacción árido-álcali) o como realizar ensayos acelerados en estos casos y también en el caso concreto de la corrosión de la armadura. En el caso de la corrosión, la envergadura de los costes de reparaciones ha estimulado la publicación de modelos y ensayos que, si bien necesitan todavía calibración, al menos suponen una cierta ayuda para el proyectista.

Removing exogenous information using pedigree data

Management of certain populations requires the preservation of its pure genetic background. When, for different reasons, undesired alleles are introduced, the original genetic conformation must be recovered. The present study tested, through computer simulations, the power of recovery (the ability for removing the foreign information) from genealogical data. Simulated scenarios comprised different numbers of exogenous individuals taking partofthe founder population anddifferent numbers of unmanaged generations before the removal program started. Strategies were based on variables arising from classical pedigree analyses such as founders? contribution and partial coancestry. The ef?ciency of the different strategies was measured as the proportion of native genetic information remaining in the population. Consequences on the inbreeding and coancestry levels of the population were also evaluated. Minimisation of the exogenous founders? contributions was the most powerful method, removing the largest amount of genetic information in just one generation.However, as a side effect, it led to the highest values of inbreeding. Scenarios with a large amount of initial exogenous alleles (i.e. high percentage of non native founders), or many generations of mixing became very dif?cult to recover, pointing out the importance of being careful about introgression events in population

El Vídeo Didáctico como soporte para un b-learning sostenible

En este artículo se describe una experiencia de innovación educativa realizada en el marco de la titulación de Sistemas de Telecomunicación de la EUITT de la Universidad Politécnica de Madrid, en la que se ha intentado graduar la dificultad de acceso de los alumnos al uso de ciertos laboratorios altamente tecnificados, por medio de instrumentos pedagógicos basados en el uso de tecnologías de la información y las comunicaciones. Se presenta, por tanto, un escenario propicio para la aplicación de una metodología educativa de formación combinada o blended-learning que potencie el proceso de aprendizaje de los estudiantes así como la optimización del uso de los costosos recursos materiales puestos a su disposición.

Future trends in Animal Breeding due to new genetic tecnologies

The Darwin theory of evolution by natural selection is based on three principles: (a) variation; (b) inheritance; and (c) natural selection. Here, I take these principles as an excuse to review some topics related to the future research prospects in Animal Breeding. With respect to the first principle I describe two forms of variation different from mutation that are becoming increasingly important: variation in copy number and microRNAs. With respect to the second principle I comment on the possible relevance of non-mendelian inheritance, the so-called epigenetic effects, of which the genomic imprinting is the best characterized in domestic species. Regarding selection principle I emphasize the importance of selection for social traits and how this could contribute to both productivity and animal welfare. Finally, I analyse the impact of molecular biology in Animal Breeding, the achievements and limitations of quantitative trait locus and classical marker-assisted selection and the future of genomic selection

Laboratorio de Bienestar Porcino: Primeros Resultados y Primeras Conclusiones

La puesta en marcha del Laboratorio de Bienestar Porcino comenzó con una iniciativa de un grupo de investigadores de la E.T.S.I. Agrónomos de Madrid (UPM) que, con el apoyo y financiación de la empresa Tragsa, desarrolló un modelo de alojamiento para cebo de cerdos que incluía un sistema patentado de separación in situ de heces y orina.

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 °C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth conditions may lead to selective growth but not be suitable for subsequent vertical growth. With optimized conditions, ordered GaN nanocolumns can be grown with a wide variety of diameters. In this work, ordered GaN nanocolumns with diameter as small as 50 nm are shown.

InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy

This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 μm. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 μm. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells’ thickness fluctuations as observed by transmission electron microscopy.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a-plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c-plane

Inspección de calidad de sandías: sistema acústico portátil

Un equipo de la Universidad Politécnica de Madrid diseña un equipo portátil para la detección no destructiva de los problemas de calidad de la pulpa de las sandías sin semillas.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

The logarithmic spiral, autoisoptic curve

In the Line of Investigation that in the department of “Technical Drawing” in the School of Agriculture Engineering of Madrid, we carry out on the study of The Technical Curves and his singularities, we demonstrate an interesting property of the Logarithmic Spiral. The demonstrated property consists of which the logarithmic spiral is a autoisoptic curve, that is to say that if from a point P anyone of the spiral tangent straight lines draw up to the previous arc, these form a constant angle α. This demonstration is novel and in addition we get to contribute a method to calculate the angle α given the equation of the spiral.

Fosa de purines vs separación in situ de heces y orina en porcino de cebo: producción de purín y de estiércol

El objetivo de este estudio fue comparar, en un alojamiento de cebo de porcino con enrejillado parcial (Laboratorio de Bienestar Porcino), la producción de residuos con un sistema tradicional de fosa de purines frente a un sistema de separación in situ con cinta plana. La fosa se vació cada cinco semanas, y la cinta se vació dos veces al día a lo largo del periodo de cebo. Ambos sistemas tuvieron el mismo tipo de ventilación por extracción bajo suelo. La cantidad de residuos generados con la separación in situ fue el 70,50% de la correspondiente al sistema tradicional, que, a su vez, fue sensiblemente menor que la habida en las explotaciones comerciales. El sistema de ventilación por extracción bajo suelo fue muy eficiente para la evaporación de agua de las deyecciones y la consecuente reducción de la cantidad de residuos generados; asimismo, los resultados obtenidos ponen de manifiesto que la separación in situ permitió una notable reducción adicional de dicha cantidad, en comparación con el sistema tradicional.

Is it possible to discriminate the body weight loss?

Most studies have described how the weight loss is when different treatments are compared (1-3), while others have also compared the weight loss by sex (4), or have taken into account psychosocial (5) and lifestyle (6, 7) variables. However, no studies have examined the interaction of different variables and the importance of them in the weight loss.