On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance per Carrier RK= h/q^2

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK/(2pi)

Experimento de propagación en banda Q con Alphasat: Técnicas para la compensación del desapuntamiento

El grupo de investigación GTIC-Radiocomunicaciones de la Universidad Politécnica de Madrid (UPM) participa en uno de los experimentos de propagación de APEX (Alphasat Propagation Experiment), denominado Alphasat propagation experiment by measuring the copolar level of the Q-Band beacon at 39.4 GHz. El experimento comenzó en abril de 2014, midiendo la señal de 39,4 GHz. Durante los primeros meses hasta septiembre de 2014, se hicieron medidas con apuntamiento fijo. El satélite no es geoestacionario sino que tiene una cierta inclinación, por lo que su posición aparente no es fija, describiendo una pequeña elipse en el cielo. Como consecuencia de esto se produce una variación sistemática en el nivel de la señal recibida que hay que eliminar. El presente Trabajo fin de Grado recoge técnicas útiles para llevar a cabo la compensación del desapuntamiento producido por el apuntamiento fijo configurado en el receptor diseñado por el grupo de investigación GTIC-Radiocomunicaciones de la UPM. El conjunto de datos utilizado, ha sido preprocesado con anterioridad llevándose a cabo un proceso de marcado y sincronización de los datos obtenidos a través de la baliza a 39,4 GHz enviada desde el Alphasat. A lo largo del documento se interpretarán y compararán los resultados obtenidos mediante gráficas elaboradas tras la aplicación de las técnicas que se describen en el desarrollo del mismo.

Evaluation of the PV cell operation temperature in the process of fast switching to open-circuit mode

A procedure for measuring the overheating temperature (ΔT ) of a p-n junction area in the structure of photovoltaic (PV) cells converting laser or solar radiations relative to the ambient temperature has been proposed for the conditions of connecting to an electric load. The basis of the procedure is the measurement of the open-circuit voltage (VO C ) during the initial time period after the fast disconnection of the external resistive load. The simultaneous temperature control on an external heated part of a PV module gives the means for determining the value of VO C at ambient temperature. Comparing it with that measured after switching OFF the load makes the calculation of ΔT possible. Calibration data on the VO C = f(T ) dependences for single-junction AlGaAs/GaAs and triple-junction InGaP/GaAs/Ge PV cells are presented. The temperature dynamics in the PV cells has been determined under flash illumination and during fast commutation of the load. Temperature measurements were taken in two cases: converting continuous laser power by single-junction cells and converting solar power by triple-junction cells operating in the concentrator modules.