Dentro de sus casas. Casa Fisac en Cerro del Aire. Casa Cano Lasso en la Florida. Casa Asís Cabrero en Puerta de Hierro. Casa Carvajal en Somosaguas. Casa Corrales en Aravaca

Esta tesis doctoral se especializa en el estudio desde el interior de casas de maestros españoles proyectadas y construidas para ellos y sus familias. Casas proyectadas y construidas para ellos mismos por arquitectos “maestros” de la arquitectura española del siglo XX, que acabaron sus estudios de arquitectura después de la guerra civil y que se habían formado en la Escuela de Madrid. Las cinco casas escogidas están situadas en la provincia de Madrid, en la hoy definida como Comunidad de Madrid. Las cinco casas son para el arquitecto y su familia. También las cinco casas son de tipología unifamiliar aislada. Todas ellas tuvieron el carácter de vivienda estable, no de fin de semana, no de refugios experimentales. El método de análisis se estructura en dos grandes bloques, lo que hemos denominado “Enfocando” y “Desde dentro”. Enfocando: Se analizan las obras precedentes de similares características y se realiza un estudio de aproximación al lugar cuyo punto final es la entrada de la casa Desde dentro: Se Inicia el estudio de la vivienda en un recorrido que atiende a los parámetros de relaciones con el exterior, materiales de acabado, mobiliario, condiciones de flexibilidad y crecimiento y relaciones vivienda-estudio. Siempre con el espacio interior como protagonista del estudio Abstract The dissertation focuses on the interior space of "master`s houses" which were conceived and built for the architect and his family. The five houses selected were built in the XX Century .The five houses are located in Madrid. The five houses are detached houses, the five houses are "residences", not experimental houses, or weekend houses. The method has two parts. Focusing and Inside Focusing: This part studies previous works, with similar characteristics. Moreover this part looks at the path from the street to the main door, through the private exterior. Inside: This part studies the relationship between interior and exterior, finishing materials, furniture, flexibility and relation with the professional spaces. All these elements are studied, always with the interior space as the main character.

La llamada “Edad del Cobre” en el siglo XIX. Aportaciones de Casiano de Prado y Juan Vilanova y Piera

Las tres edades que Tito Lucrecio Caro (99-55 a.C.) había reconocido en la Antigüedad para las épocas anteriores: Edad de Piedra, Edad del Bronce y Edad del Hierro, fueron asumidas en la primera mitad del siglo XIX para clasificar los objetos prehistóricos, cuando aún esta disciplina no era reconocida oficialmente y escasos investigadores la practicaban. Pero, frente a una clasificación tan estática, basada en los datos que hacían referencia exclusivamente a aspectos técnicos, con el desarrollo de nuevas disciplinas como la Geología y la Paleontología, que aportaban criterios de sucesión estratigráfica, se empezaron a observar algunas anomalías. Y más aún, después de la irrupción del paradigma darwinista, a partir de 1859, y la comprobación al mismo tiempo de que podían existir momentos intermedios o de transición (evolución sin ruptura) en el desarrollo cultural. La aparición de objetos de cobre puro, por ejemplo, permitiría plantear la existencia de una Edad del Cobre, situada entre la Edad de Piedra y la Edad del Bronce. El reconocimiento de la Edad del Cobre fue algo muy lento y el debate sobre su existencia o no llegó hasta bien entrado el siglo XX. El presente artículo se centra en el estudio historiográfico sobre cómo se llegó a aceptar la Edad del Cobre, que fue uno de los grandes temas de discusión del siglo XIX, y que hoy está injustificadamente olvidado en la literatura científica especializada.

Presencia de Phellinus pini en masas de pino silvestre en la Sierra de Guadarrama: influencia de factores estacionales y selvícolas

Los objetivos de este trabajo son analizar la relación entre factores estacionales y selvícolas y la presencia de P. pini en la masa de origen natural de pino silvestre localizada en la Sierra de Guadarrama, y realizar una evaluación de la capacidad de predecir las situaciones más vulnerables al ataque. Según el modelo, la probabilidad de presencia de P. pini disminuye de forma lineal con la altitud. La variación en la orientación apenas influye en la probabilidad de presencia de pies chamosos excepto en las zonas de solana pura en las que la probabilidad aumenta ligeramente. Tanto la densidad como el área basimétrica influyen positivamente en la probabilidad de presencia de P. pini. El efecto de ambas variables es de forma sigmoide, con valores máximos de probabilidad de presencia a partir de 35m2/ha y por debajo de 500 pies/ha. La evaluación interna (usando bootstrap) de la capacidad predictiva del modelo es aceptable para la discriminación (área bajo la curva ROC de 0.71) y muy buena para la calibración (pendiente= 0.95; constante= -0.04). A la espera de una validación del modelo con una muestra independiente, los resultados sugieren que el riesgo de daños por P. pini se puede pronosticar de forma fiable con el modelo desarrollado.

Biomasa ramoneable procedente de resalveos sobre tallares envejecidos de encina

Los tallares envejecidos de encina ocupan una gran superficie en España, y presentan graves problemas selvícolas, ecológicos y económicos cuya solución podría venir de la aplicación de resalveos de conversión. Dicho tratamiento provoca inevitablemente un rebrote que debe ser controlado, siendo el ganado silvestre o doméstico la principal herramienta para ello. En este trabajo se presentan los resultados obtenidos durante los tres años siguientes tras la aplicación de claras de distinto peso en un tallar envejecido de Guadalajara, en relación con la producción de brotes de suelo. A modo de ejemplo, para un 50% de área basimétrica extraída se producen los siguientes kg de materia seca/ha como media: 132,2 el primer año; 265,1 el segundo año; 437,9 el tercer año. También se ofrecen, para los dos primeros años tras las claras, valores relativos al porcentaje de peso seco de hojas sobre el peso seco total de brotes de suelo: 53,3 % y 60,6 %, respectivamente.

Soil compaction and vegetation cover in a Scots pine stand at the Mediterranean rangelands

Right development of ROOT SYSTEMS is essential to ensure seedling survival in the initial stages of natural regeneration processes. Soil compaction determines this development both because of its influence on soil Tª & moisture dynamics and for its direct effect on soil mechanical impedance to root growth. All this effects can be assessed as a whole through soil penetration resistance (Soil Strength) measurements. SOIL STRENGTH has been usually evaluated in forest research in connection with severe disturbances derived from heavy machinery works during forest operations. Nevertheless, undisturbed soils are also expected to show different levels of compaction for root development. Organic matter modifies soil structure and so on porosity, compaction and resultant soil resistance to penetration. Its concentration in surface layers is rather related to vegetation cover composition and density. So within forest stands, a relationship is expected to be found between VEGETATION COVER density and compaction measured as resistance to penetration (soil strength)

Promoting mixed stands through conversion treatments. Effect of holm oak coppices thinning on black pine regeneration

The effects of conversion treatments, depending on ecological factors and silvicultural parameters (thinning intensity, thinning type and rotation, among others) have been studied during the last fifteen years in an experimental trial in Central Spain. The general climate is continental Mediterranean; soils are low depth and limy; vegetation is an homogeneous dense coppices of Quercus ilex with isolated Pinus nigra trees. The experimental design (three locations) includes different thinning intensities (from 0 to 100% of extracted basal area). Inventories have been carried out in 1994 and 2010; thinning treatments were done in 1995 and 2011. Analysis of the effects of the conversion treatment show the increment of diameter and height growth rates, the canopy recovery and the stand resprouting, finding differences in these effects between thinning treatments. Besides the induced changes at holm oak stand, the application of conversion treatment clearly changed the woodland dynamics. Fifteen years after the thinnings, floristic composition varied and an abundant pine regeneration was installed in the woodland. In this work we describe the changes between inventories in tree species composition and diameter distribution, specially in the case of black pine. The conversion treatment caused changes in forest dynamics in the short term, increasing biodiversity and diversifying the forest structure. The fast installation of Pinus regeneration suggests the potential of the zone for the establishment of multipurpose mixed Quercus-Pinus stands in wide areas where Quercus species were favoured by human populations for firewood production. Conversion treatment of coppices, with the creation of mixed stands, constitutes a good management alternative for extensive areas and an interesting technique to adaptation to global change.

Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation

Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p–i–n structures emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 μm. The optimization studies of these structures for emission at 1.55 μm are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 μm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 μm.

Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

High quality 1 μm thick a-plane MgxZn1−xO layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg, Zn and O elements was determined independently, proving the substitutional behaviour of Mg in Zn-sites of the wurtzite lattice. X-Ray diffraction pole figure analysis also confirms the absence of phase separation. Optical properties at such high Mg contents were studied in Schottky photodiodes.

Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

Gas sensor based on room temperature optical properties of Surface QDs

Self-organized InGaAs QDs are intensively studied for optoelectronic applications. Several approaches are in study to reach the emission wavelengths needed for these applications. The use of antimony (Sb) in either the capping layer or into the dots is one example. However, these studies are normally focused on buried QD (BQD) where there are still different controversial theories concerning the role of Sb. Ones suggest that Sb incorporates into the dot [1], while others support the hypothesis that the Sb occupies positions surrounding the dot [2] thus helping to keep their shape during the capping growth.

Room temperature photoluminescence of InGaAs Surface Quantum Dots

Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor applications

Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increased

Synthesis and characterization of GaAsSb-capped InAs-based QDIPs

Quantum dot infrared photodetectors (QDIPs) are very attractive for infrared imaging applications due to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high quality active region which requires a structural optimization of the nanostructures. With using GaAsSb capping layer, the optical properties, such as the PL intensity and its full width at half maximum (FWHM), of InAs QDs have been improved in the range between 1.15 and 1.5 m, because of the reduction of the compressive strain in QDs and the increment of QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponse spectra from GaAsSb-capped InAs-based QDIPs

Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots

Quantum dot infrared photodetectors (QDIPs) are very attractive for many applications such as infrared imaging, remote sensing and gas sensing, thanks to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high-quality active region which requires an optimization of the nanostructure. By using GaAsSb capping layer, InAs QDs have improved their optical emission in the range between 1.15 and 1.3 m (at Sb composition of 14 %), due to a reduction of a compressive strain in QD and an increment of a QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponses at ~ 5 m from GaAsSb-capped InAs/GaAs QDIPs under normal light-incidence.