17 resultados para Hexagonal boron nitride


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This article is intended to state that Technical Drawing is a multiple tool of expression and communication essential to develop inquiry processes, the scientifically basis and comprehension of drawings and technological designs that can be manufactured. We demonstrate graphically and analytically that spatial vision and graphic thinking allow us to identify graphically real life problems, develop proposals of solutions to be analysed from different points of view, plan and develop the project, provide information needed to make decisions on objects and technological processes. From the knowledge of Technical Drawing and CAD tools we have developed graphic analyses to improve and optimize our proposed modification of the geometry of the rectangular cells of conventional bricks by hexagonal cells, which is protected by a Spanish patent owned by the Polytechnic University of Madrid. This new internal geometry of the bricks will improve the efficiency and the acoustic damping of walls built with the ceramic bricks of horizontal hollow, maintaining the same size of the conventional bricks, without increasing costs either in the manufacture and the sale. A single brick will achieve the width equivalent to more than FOUR conventional bricks.

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The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is eveloped on both GaN/sapphire templates and GaN-buffered Si(111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.