Surface impedance for electromagnetic fields over a dielectric-coated circular cylinder

For small or medium size conformal array antennas in terms of the wave length, modal solutions in spectral domain for mutual coupling analysis are convenient for canonical shapes such as circular cylinder [1] or sphere [2], but as the antenna dimensions increase a large number of terms are necessary. For large structures the uniform theory of diffraction (UTD) is commonly used to solve this problem for canonical and arbitrarily convex shaped perfect electric conductor (PEC) surfaces [3]. A UTD solution for mutual coupling on an impedance cylinder has been introduced in [4], [5] but using a constant surface impedance.

Propagation losses by tunnelling in barrier optical waveguides

An analytical model is proposed in order to estimate the optical propagation losses due to tunnelling in barrier waveguides. The results are validated by means of a beam propagation method (BPM) simulations for different waveguides conditions.

Durability of dielectric fluids for concentrating photovoltaic systems

Several dielectric fluids that might be used for immersing optics are analyzed in this paper. Their transmittances, both before and after an accelerated exposure to ultraviolet (UV) radiation equivalent to several years under real sun, are presented. In addition, the photocurrent losses caused by the decrease in transmittance experienced by each fluid are estimated for current III?V multijunction (MJ) solar cells. The most stable fluids were found to be paraffin and silicone oils whose transmittances remained practically unaltered after a UV dosage equivalent to 3 years of AM1.5D radiation.

Contribution to the Analysis of Waveguides and Design of Passive Components at Millimeter and Submillimeter-Waves

Esta tesis está dedicada al análisis de las guías de onda y el diseño de los componentes pasivos con énfasis en aplicaciones de alta frecuencia. En primer lugar, se lleva a cabo el análisis de las guías de onda con conductores metálicos no ideales, con el objetivo de establecer el límite superior en frecuencia de las aproximaciones habitualmente utilizadas en microondas para el cálculo de las pérdidas óhmicas. Posteriormente, se presenta el diseño de diferentes componentes pasivos de guía de ondas: filtros, transductores de modos ortogonales (OMT), polarizadores, duplexores y alimentadores de antena, funcionando en frecuencias desde 10 a 750 GHz. Para el correcto diseño de componentes a altas frecuencias se requiere, en primer lugar, comprender los nuevos procesos de fabricación y después adecuar los diversos componentes para cumplir especificaciones eléctricas y geométricas simultáneamente. Para esto, se presentan modificaciones y nuevas geometrías de guiado de ondas para diferentes aplicaciones y procesos tecnológicos. Además se discuten sus ventajas sobre las soluciones ya existentes. Además, el trabajo presentado en esta tesis se ocupa del desarrollo completo de dispositivos: diseño, fabricación y caracterización de los componentes ya mencionados. Por último, algunos de los dispositivos desarrollados han sido diseñados para ser integrados en diferentes sistemas. De esta forma, se mejoran las prestaciones y capacidades de dichos sistemas.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Polarization analysis in anisotropous nonlinear dielectric media

Análisis de la polarización en medios dieléctricos anisótropos no lineales centrosimétricos y no centrosimétricos.