Intermediate band materials for more efficient solar energy use: quantum modelling and experimental realizations

The intermediate band (IB) solar cell (Fig. 1) has been proposed [1] to increase photovoltaic efficiency by a factor above 1.5, based on the absorption of two sub-bandgap photons to promote an electron across the bandgap. To realize this principle, that can be applied also to obtain efficient photocatalysis with sunlight, we proposed in recent years several materials where a metal or heavy element, substituting for an electropositive atom in a known semiconductor that has an appropriate band gap width (around 2 eV), forms inside the gap the partially filled levels needed for this aim

Dual-Band Tunable Recursive Active Filter

This letter presents a novel recursive active filter topology that provides dual-band performance, with independent tuning capability in both bands. The dual-band operation is achieved by using two independent feedback lines. Additionally, linear phase shifters based on left-handed cells are included in these two branches in order to tune the center frequency of both pass bands.

Nanotechnology for more efficient photovoltaics: the quantum dot intermediate band solar cell

The intermediate band solar cell [1] has been proposed as a concept able to substantially enhance the efficiency limit of an ordinary single junction solar cell. If a band permitted for electrons is inserted within the forbidden band of a semiconductor then a novel path for photo generation is open: electron hole pairs may be formed by the successive absorption of two sub band gap photons using the intermediate band (IB) as a stepping stone. While the increase of the photovoltaic (PV) current is not a big achievement —it suffices to reduce the band gap— the achievement of this extra current at high voltage is the key of the IB concept. In ordinary cells the voltage is limited by the band gap so that reducing it would also reduce the band gap. In the intermediate band solar cell the high voltage is produced when the IB is permitted to have a Quasi Fermi Level (QFL) different from those of the Conduction Band (CB) and the Valence Band (VB). For it the cell must be properly isolated from the external contacts, which is achieved by putting the IB material between two n- and p-type ordinary semiconductors [2]. Efficiency thermodynamic limit of 63% is obtained for the IB solar cell1 vs. the 40% obtained [3] for ordinary single junction solar cells. Detailed information about the IB solar cells can be found elsewhere [4].

Ku band transmitarray lens for microwave applications

In this document a microstrip constrained lens device for Ku band, for microwave purpose, is presented. This paper offers an overview of artificial lens-type devices and the proposed transmitarray lens is thoroughly studied in terms of design and manufacturing, with architecture discussion and selection, along with the design, manufacturing and validation of all the forming components of the transmitarray (transmission circuits, radiating elements, etc.). Each element is properly characterized and assembled properly in the complete transmitarray prototype. Eventually, radiation pattern measurements as well as gain and directivity values, are provided to show the proper behaviour of the proposed transmitarray lens.

Low-Profile Dual Circularly Polarized Antenna Array for Satellite Communications in the X Band

A planar antenna is introduced that works as a portable system for X-band satellite communications. This antenna is low-profile and modular with dimensions of 40 × 40 × 2.5 × cm. It is composed of a square array of 144 printed circuit elements that cover a wide bandwidth (14.7%) for transmission and reception along with dual and interchangeable circular polarization. A radiation efficiency above 50% is achieved by a low-loss stripline feeding network. This printed antenna has a 3 dB beamwidth of 5°, a maximum gain of 26 dBi and an axial ratio under 1.9 dB over the entire frequency band. The complete design of the antenna is shown, and the measurements are compared with simulations to reveal very good agreement.

Theoretical study of band alignment in nano-porous ZnO interacting with substituted Phthalocyanines

The aim of this work is the theoretical study of the band alignment between the two components of a hybrid organic-inorganic solar-cell. The working organic molecules are metal tetra-sulphonated phthalocyanines (M-Pc) and the inorganic material is nano-porous ZnO growth in the 001 direction. The theoretical calculations are being made using the density functional theory (DFT) using a GGA functional with the SIESTA code, which projects electron wave functions and density onto a real space grid and uses as basis set a linear combination of numerical, finite-range localized atomic orbitals. We also used the DFT+U method included in the code that allows a semi-empirical inclusion of electronic correlations in the description of electronic spectra for systems such as zinc oxide.

Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

Control en modo corriente y tensión eficaz con lazo de offset para inversor monofásico embarcado en aviones adecuado para funcionamiento en paralelo y conexión trifásica

La incorporación de un lazo de tensión eficaz de (RMS) es una posibilidad atractiva para el control de inversores de potencia de una manera sencilla. Si se combina con un control en modo corriente usando una sonda de efecto Hall, el ruido de modo común de la etapa de potencia transmitido al control puede ser reducido, mejorando la distorsión armónica total (THD) y manteniendo la posibilidad de operación en paralelo. Además, al estar el control de tensión definido sobre baja frecuencia (DC), obtener una gran ganancia a la frecuencia de interés (0Hz) es sencilla con control basado en PI, lo cual garantiza una onda de tensión de salida a 400Hz sin error, a costa de un peor desempeño ante transitorios y ante cargas no lineales. Sin embargo, la implementación de una estrategia de control de esta naturaleza puede provocar la aparición de offset en la salida. Por otra parte, el esquema oculta la información de la fase de la onda de tensión de salida, necesaria para sincronizar tres módulos monofásicos en un montaje trifásico. En este artículo el diseño e implementación del sistema completo es abordado, resolviendo los inconvenientes mencionados mediante un tercer lazo analógico de control para el offset y un algoritmo de sincronización implementado en una FPGA.

Current Mode with RMS Voltage and Offset Control Loops for a Single-Phase Aircraft Inverter Suitable for Parallel and 3-Phase Operation Modes

Rms voltage regulation may be an attractive possibility for controlling power inverters. Combined with a Hall Effect sensor for current control, it keeps its parallel operation capability while increasing its noise immunity, which may lead to a reduction of the Total Harmonic Distortion (THD). Besides, as voltage regulation is designed in DC, a simple PI regulator can provide accurate voltage tracking. Nevertheless, this approach does not lack drawbacks. Its narrow voltage bandwidth makes transients last longer and it increases the voltage THD when feeding non-linear loads, such as rectifying stages. On the other hand, the implementation can fall into offset voltage error. Furthermore, the information of the output voltage phase is hidden for the control as well, making the synchronization of a 3-phase setup not trivial. This paper explains the concept, design and implementation of the whole control scheme, in an on board inverter able to run in parallel and within a 3-phase setup. Special attention is paid to solve the problems foreseen at implementation level: a third analog loop accounts for the offset level is added and a digital algorithm guarantees 3-phase voltage synchronization.

Modular Planar Antenna at X-band for satellite communications

An antenna which has been conceived as a portable system for satellite communications based on the recommendations ITU-R S.580-6 [1] and ITU-R S.465-5 [2] for small antennas, i.e., with a diameter lower than 50 wavelengths, is introduced. It is a planar and a compact structure with a size of 40×40×2 cm. The antenna is formed by an array of 256 printed elements covering a large bandwidth (14.7%) at X-Band. The specification includes transmission (Tx) and reception (Rx) bands simultaneously. The printed antenna has a radiation pattern with a 3dB beamwidth of 5°, over a 31dBi gain, and a dual and an interchangeable circular polarization

Portable low profile antenna at X-band

An antenna which has been conceived as a portable system for satellite communications based on the recommendations ITU-R S.580-6 and ITU-R S.465-5 for small antennas, i.e., with a diameter lower than 50 wavelengths, is introduced. It is a planar and a compact structure with a size of 40×40×2 cm. The antenna is formed by an array of 256 printed elements covering a large bandwidth (14.7%) at X-Band with a VSWR of 1.4:1. The specification includes transmission (Tx) and reception (Rx) bands simultaneously. The printed antenna has a radiation pattern with a 3dB beamwidth of 5°, over a 31dBi gain, and a dual and an interchangeable circular polarization.

Research on intermediate band solar cells and development of experimental techniques for their characterization under concentrated illumination

Abstract This work is a contribution to the research and development of the intermediate band solar cell (IBSC), a high efficiency photovoltaic concept that features the advantages of both low and high bandgap solar cells. The resemblance with a low bandgap solar cell comes from the fact that the IBSC hosts an electronic energy band -the intermediate band (IB)- within the semiconductor bandgap. This IB allows the collection of sub-bandgap energy photons by means of two-step photon absorption processes, from the valence band (VB) to the IB and from there to the conduction band (CB). The exploitation of these low energy photons implies a more efficient use of the solar spectrum. The resemblance of the IBSC with a high bandgap solar cell is related to the preservation of the voltage: the open-circuit voltage (VOC) of an IBSC is not limited by any of the sub-bandgaps (involving the IB), but only by the fundamental bandgap (defined from the VB to the CB). Nevertheless, the presence of the IB allows new paths for electronic recombination and the performance of the IBSC is degraded at 1 sun operation conditions. A theoretical argument is presented regarding the need for the use of concentrated illumination in order to circumvent the degradation of the voltage derived from the increase in the recombi¬nation. This theory is supported by the experimental verification carried out with our novel characterization technique consisting of the acquisition of photogenerated current (IL)-VOC pairs under low temperature and concentrated light. Besides, at this stage of the IBSC research, several new IB materials are being engineered and our novel character¬ization tool can be very useful to provide feedback on their capability to perform as real IBSCs, verifying or disregarding the fulfillment of the “voltage preservation” principle. An analytical model has also been developed to assess the potential of quantum-dot (QD)-IBSCs. It is based on the calculation of band alignment of III-V alloyed heterojunc-tions, the estimation of the confined energy levels in a QD and the calculation of the de¬tailed balance efficiency. Several potentially useful QD materials have been identified, such as InAs/AlxGa1-xAs, InAs/GaxIn1-xP, InAs1-yNy/AlAsxSb1-x or InAs1-zNz/Alx[GayIn1-y]1-xP. Finally, a model for the analysis of the series resistance of a concentrator solar cell has also been developed to design and fabricate IBSCs adapted to 1,000 suns. Resumen Este trabajo contribuye a la investigación y al desarrollo de la célula solar de banda intermedia (IBSC), un concepto fotovoltaico de alta eficiencia que auna las ventajas de una célula solar de bajo y de alto gap. La IBSC se parece a una célula solar de bajo gap (o banda prohibida) en que la IBSC alberga una banda de energía -la banda intermedia (IB)-en el seno de la banda prohibida. Esta IB permite colectar fotones de energía inferior a la banda prohibida por medio de procesos de absorción de fotones en dos pasos, de la banda de valencia (VB) a la IB y de allí a la banda de conducción (CB). El aprovechamiento de estos fotones de baja energía conlleva un empleo más eficiente del espectro solar. La semejanza antre la IBSC y una célula solar de alto gap está relacionada con la preservación del voltaje: la tensión de circuito abierto (Vbc) de una IBSC no está limitada por ninguna de las fracciones en las que la IB divide a la banda prohibida, sino que está únicamente limitada por el ancho de banda fundamental del semiconductor (definido entre VB y CB). No obstante, la presencia de la IB posibilita nuevos caminos de recombinación electrónica, lo cual degrada el rendimiento de la IBSC a 1 sol. Este trabajo argumenta de forma teórica la necesidad de emplear luz concentrada para evitar compensar el aumento de la recom¬binación de la IBSC y evitar la degradación del voltage. Lo anterior se ha verificado experimentalmente por medio de nuestra novedosa técnica de caracterización consistente en la adquisicin de pares de corriente fotogenerada (IL)-VOG en concentración y a baja temperatura. En esta etapa de la investigación, se están desarrollando nuevos materiales de IB y nuestra herramienta de caracterizacin está siendo empleada para realimentar el proceso de fabricación, comprobando si los materiales tienen capacidad para operar como verdaderas IBSCs por medio de la verificación del principio de preservación del voltaje. También se ha desarrollado un modelo analítico para evaluar el potencial de IBSCs de puntos cuánticos. Dicho modelo está basado en el cálculo del alineamiento de bandas de energía en heterouniones de aleaciones de materiales III-V, en la estimación de la energía de los niveles confinados en un QD y en el cálculo de la eficiencia de balance detallado. Este modelo ha permitido identificar varios materiales de QDs potencialmente útiles como InAs/AlxGai_xAs, InAs/GaxIni_xP, InAsi_yNy/AlAsxSbi_x ó InAsi_zNz/Alx[GayIni_y]i_xP. Finalmente, también se ha desarrollado un modelado teórico para el análisis de la resistencia serie de una célula solar de concentración. Gracias a dicho modelo se han diseñado y fabricado IBSCs adaptadas a 1.000 soles.

Dual circular polarized steering antenna for satellite communications in X band

In this work, a dual circular polarized steering antenna for satellite communications in X band is presented. The antenna consists of printed elements grouped in an array. This terminal works in a frequency band from 7.25 GHz up to 8.4 GHz (15% of bandwidth), where both bands, reception (RX) and transmission (TX) are included simultaneously and Left Handed Circular Polarization (LHCP) and Right Handed Circular Polarization (RHCP) are interchangeable. The antenna is compact, narrow bandwidth and reaches a gain of 16 dBi. It has the capability to steer in elevation to 45±, 75±, 105± and 135± electronically with a Butler matrix and 360± in azimuth with a motorized junction.

Voltage recovery in intermediate band solar cells

The intermediate band solar cell (IBSC) is based on a novel photovoltaic concept and has a limiting efficiency of 63.2%, which compares favorably with the 40.7% efficiency of a conventional, single junction solar cell. It is characterized by a material hosting a collection of energy levels within its bandgap, allowing the cell to exploit photons with sub-bandgap energies in a two-step absorption process, thus improving the utilization of the solar spectrum. However, these intermediate levels are often regarded as an inherent source of supplementary recombination, although this harmful effect can in theory be counteracted by the use of concentrated light. We present here a novel, low-temperature characterization technique using concentrated light that reveals how the initially enhanced recombination in the IBSC is reduced so that its open-circuit voltage is completely recovered and reaches that of a conventional solar cell.