Precipitated iron: a limit on gettering efficacy in multicrystalline silicon

A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering process on interstitial and precipitated iron in multicrystalline silicon. The model predicts a large concentration of precipitated iron remaining after standard gettering for most as-grown iron distributions. Although changes in the precipitated iron distribution are predicted to be small, the simulated post-processing interstitial iron concentration is predicted to depend strongly on the as-grown distribution of precipitates, indicating that precipitates must be considered as internal sources of contamination during processing. To inform and validate the model, the iron distributions before and after a standard phosphorus diffusion step are studied in samples from the bottom, middle, and top of an intentionally Fe-contaminated laboratory ingot. A census of iron-silicide precipitates taken by synchrotron-based X-ray fluorescence microscopy confirms the presence of a high density of iron-silicide precipitates both before and after phosphorus diffusion. A comparable precipitated iron distribution was measured in a sister wafer after hydrogenation during a firing step. The similar distributions of precipitated iron seen after each step in the solar cell process confirm that the effect of standard gettering on precipitated iron is strongly limited as predicted by simulation. Good agreement between the experimental and simulated data supports the hypothesis that gettering kinetics is governed by not only the total iron concentration but also by the distribution of precipitated iron. Finally, future directions based on the modeling are suggested for the improvement of effective minority carrier lifetime in multicrystalline silicon solar cells.

Performance of UV-enhanced PMMA fresnel lenses and impact on LCOE

Tiny increases in the transmittance of optical materials within a CPV module can have an important impact on the economy of a plant. This is certainly true in systems comprising multi-junction solar cells, whose high performance, based on a balanced photocurrent generation among the series-connected junctions, is very sensitive to spectrum variations. Every efficiency point gained causes not only an increase in the kilowatts hour produced, but a higher benefit on it, since the difference between electricity tariff and Levelized Cost of Electricity (LCOE) rises. This work studies the impact on the LCOE of a plant based on modules comprising PMMA lenses of two different types, standard UV blocking grade which is normally used for outdoor applications at high DNI climate and a specialty stabilized UV-enhanced transmittance acrylic (see Figure 1). Energy production will be compared for these two systems throughout the year at different sites to analyze when (season, time of the day) and where the usage of the enhanced PMMA is justified.

Outline of Europe-Japan collaborative research on concentrator photovoltaics

The Europe-Japan Collaborative Research Project on Concentrator Photovoltaics (CPV) has been initiated under support by the EC (European Commission) and NEDO (New Energy and Industrial Technology Development Organization) since June 2011. This is project (NGCPV Project; a New Generation of Concentrator PhotoVoltaic cells, modules and systems) is aiming to accelerate the move to very high efficiency and lower cost CPV technologies and to enhance widespread deployment of CPV systems. 7 organizations such as UPM, FhG-ISE Imperial College, BSQ, CEA-INES, ENEA, and PSE in Europe and 9 organizations such as TTI, Univ. Tokyo, AIST, Sharp Co. Daido Steel Co., Kobe Univ., Miyazaki Univ., Asahi Kasei Co., and Takano Co. participate in this project. The targets of this project are 1) to develop world-record efficiency CPV cells of more than 45%, 2) to develop world-record efficiency CPV modules of 35%, 3) to establish standard measurements of CPV cells and modules, 4) to install 50kW CPV system in Spain, to carry out field test of CPV system and to manage power generation of CPV systems, and 5) to develop high-efficiency and low-cost new materials and structure cells such as III-V-N, III-V-on-Si tandem, quantum dots and wells. This paper presents outline of this project and most recent results such as world record efficiency (37.9% under 1-sun) cell and high-efficiency (43.5% under 240-306 suns) concentrator cell with inverted epitaxial grown InGaP/GaAs/InGaAs 3-junction solar cells.

Estudio de las propiedades mecánicas de obleas de silicio

En esta tesis se propone un procedimiento para evaluar la resistencia mecánica de obleas de silicio cristalino y se aplica en diferentes casos válidos para la industria. En el sector de la industria fotovoltaica predomina la tecnología basada en paneles de silicio cristalino. Estos paneles están compuestos por células solares conectadas en serie y estas células se forman a partir de obleas de silicio. Con el objetivo de disminuir el coste del panel, en los últimos años se ha observado una clara tendencia a la reducción del espesor de las obleas. Esta reducción del espesor modifica la rigidez de las obleas por lo que ha sido necesario modificar la manera tradicional de manipularlas con el objetivo de mantener un bajo ratio de rotura. Para ello, es necesario conocer la resistencia mecánica de las obleas. En la primera parte del trabajo se describen las obleas de silicio, desde su proceso de formación hasta sus propiedades mecánicas. Se muestra la influencia de la estructura cristalográfica en la resistencia y en el comportamiento ya que el cristal de silicio es anisótropo. Se propone también el método de caracterización de la resistencia. Se utiliza un criterio probabilista basado en los métodos de dimensionamiento de materiales frágiles en el que la resistencia queda determinada por los parámetros de la ley de Weibull triparamétrica. Se propone el procedimiento para obtener estos parámetros a partir de campañas de ensayos, modelización numérica por elementos finitos y un algoritmo iterativo de ajuste de los resultados. En la segunda parte de la tesis se describen los diferentes tipos de ensayos que se suelen llevar a cabo con este material. Se muestra además, para cada uno de los ensayos descritos, un estudio comparativo de diferentes modelos de elementos finitos simulando los ensayos. Se comparan tanto los resultados aportados por cada modelo como los tiempos de cálculo. Por último, se presentan tres aplicaciones diferentes donde se ha aplicado este procedimiento de estudio. La primera aplicación consiste en la comparación de la resistencia mecánica de obleas de silicio en función del método de crecimiento del lingote. La resistencia de las tradicionales obleas monocristalinas obtenidas por el método Czochralski y obleas multicristalinas es comparada con las novedosas obleas quasi-monocristalinas obtenidas por métodos de fundición. En la segunda aplicación se evalúa la profundidad de las grietas generadas en el proceso de corte del lingote en obleas. Este estudio se realiza de manera indirecta: caracterizando la resistencia de grupos de obleas sometidas a baños químicos de diferente duración. El baño químico reduce el espesor de las obleas eliminando las capas más dañadas. La resistencia de cada grupo es analizada y la comparación permite obtener la profundidad de las grietas generadas en el proceso de corte. Por último, se aplica este procedimiento a un grupo de obleas con características muy especiales: obleas preparadas para formar células de contacto posterior EWT. Estas obleas presentan miles de agujeros que las debilitan considerablemente. Se aplica el procedimiento de estudio propuesto con un grupo de estas obleas y se compara la resistencia obtenida con un grupo de referencia. Además, se propone un método simplificado de estudio basado en la aplicación de una superficie de intensificación de tensiones. ABSTRACT In this thesis, a procedure to evaluate the mechanical strength of crystalline silicon wafers is proposed and applied in different studies. The photovoltaic industry is mainly based on crystalline silicon modules. These modules are composed of solar cells which are based on silicon wafers. Regarding the cost reduction of solar modules, a clear tendency to use thinner wafers has been observed during last years. Since the stiffness varies with thickness, the manipulation techniques need to be modified in order to guarantee a low breakage rate. To this end, the mechanical strength has to be characterized correctly. In the first part of the thesis, silicon wafers are described including the different ways to produce them and the mechanical properties of interest. The influence of the crystallographic structure in the strength and the behaviour (the anisotropy of the silicon crystal) is shown. In addition, a method to characterize the mechanical strength is proposed. This probabilistic procedure is based on methods to characterize brittle materials. The strength is characterized by the values of the three parameters of the Weibull cumulative distribution function (cdf). The proposed method requires carrying out several tests, to simulate them through Finite Element models and an iterative algorithm in order to estimate the parameters of the Weibull cdf. In the second part of the thesis, the different types of test that are usually employed with these samples are described. Moreover, different Finite Element models for the simulation of each test are compared regarding the information supplied by each model and the calculation times. Finally, the method of characterization is applied to three examples of practical applications. The first application consists in the comparison of the mechanical strength of silicon wafers depending on the ingot growth method. The conventional monocrystalline wafers based on the Czochralski method and the multicrystalline ones are compared with the new quasi-monocrystalline substrates. The second application is related to the estimation of the crack length caused by the drilling process. An indirect way is used to this end: several sets of silicon wafers are subjected to chemical etchings of different duration. The etching procedure reduces the thickness of the wafers removing the most damaged layers. The strength of each set is obtained by means of the proposed method and the comparison permits to estimate the crack length. At last, the procedure is applied to determine the strength of wafers used for the design of back-contact cells of type ETW. These samples are drilled in a first step resulting in silicon wafers with thousands of tiny holes. The strength of the drilled wafers is obtained and compared with the one of a standard set without holes. Moreover, a simplified approach based on a stress intensification surface is proposed.

Lifetime improvement after phosphorous diffusion gettering on upgraded metallurgical grade silicon

Wide experimental evidence of the phosphorus diffusion gettering beneficial effect on solar grade silicon is found by measuring electron effective lifetime and interstitial iron concentration in as-grown and post processed samples from two ingots of upgraded metallurgical grade silicon produced by Ferrosolar. Results after two different P-diffusion processes are compared: P emitter diffusion at 850ºC followed by fast cool-down (called “standard process”) or followed by slow cool-down (called “extended process”). It is shown that final lifetimes of this low cost material are in the range of those obtained with conventional material. The extended process can be beneficial for wafers with specific initial distribution and concentration of iron, e.g. materials with high concentration of big Fe precipitates, while for other cases the standard process is enough efficient. An analysis based on the comparison of measured lifetime and dissolved iron concentration with theoretical calculations helps to infer the initial iron distribution and concentration, and according to that, choose the more effective type of gettering.

Experimental and numerical study of cw green laser crystallization of a-Si:H thin films

Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).

On the simulation of the UPMSAT-2 microsatellite power

Simulation of satellite subsystems behaviour is extramely important in the design at early stages. The subsystems are normally simulated in the both ways : isolated and as part of more complex simulation that takes into account imputs from other subsystems (concurrent design). In the present work, a simple concurrent simulation of the power subsystem of a microsatellite, UPMSat-2, is described. The aim of the work is to obtain the performance profile of the system (battery charging level, power consumption by the payloads, power supply from solar panels....). Different situations such as battery critical low or high level, effects of high current charging due to the low temperature of solar panels after eclipse,DoD margins..., were analysed, and different safety strategies studied using the developed tool (simulator) to fulfil the mission requirements. Also, failure cases were analysed in order to study the robustness of the system. The mentioned simulator has been programed taking into account the power consumption performances (average and maximum consumptions per orbit/day) of small part of the subsystem (SELEX GALILEO SPVS modular generators built with Azur Space solar cells, SAFT VES16 6P4S Li-ion battery, SSBV magnetometers, TECNOBIT and DATSI/UPM On Board Data Handling -OBDH-...). The developed tool is then intended to be a modular simulator, with the chance of use any other components implementing some standard data.

Durability of dielectric fluids for concentrating photovoltaic systems

Several dielectric fluids that might be used for immersing optics are analyzed in this paper. Their transmittances, both before and after an accelerated exposure to ultraviolet (UV) radiation equivalent to several years under real sun, are presented. In addition, the photocurrent losses caused by the decrease in transmittance experienced by each fluid are estimated for current III?V multijunction (MJ) solar cells. The most stable fluids were found to be paraffin and silicone oils whose transmittances remained practically unaltered after a UV dosage equivalent to 3 years of AM1.5D radiation.

Obtaining an intermediate band photovoltaic material through the Bi insertion in CdTe

Defect interaction can take place in CdTe under Te and Bi rich conditions. We demonstrate in this work through first principles calculations, that this phenomenon allows a Jahn Teller distortion to form an isolated half-filled intermediate band in the host semiconductor band-gap. This delocalized energy band supports the experimental deep level reported in the host band-gap of CdTe at a low bismuth concentration. Furthermore, the calculated optical absorption of CdTe:Bi in this work shows a significant subband-gap absorption that also supports the enhancement of the optical absorption found in the previous experimental results.

Integración arquitectónica y constructiva de sistemas fotovoltaicos de tecnología de lámina delgada en relación con la disipación térmica y almacenamiento de calor

Esta tesis doctoral contribuye al análisis y desarrollo de nuevos elementos constructivos que integran sistemas de generación eléctrica a través de células fotovoltaicas (FV); particularmente, basados en tecnología FV de lámina delgada. Para ello se estudia el proceso de la integración arquitectónica de éstos elementos (conocido internacionalmente como “Building Integrated Photovoltaic – BIPV”) mediante diferentes metodologías. Se inicia con el estudio de los elementos fotovoltaicos existentes y continúa con los materiales que conforman actualmente las pieles de los edificios y su posible adaptación a las diferentes tecnologías. Posteriormente, se propone una estrategia de integración de los elementos FV en los materiales constructivos. En ésta se considera la doble función de los elementos BIPV, eléctrica y arquitectónica, y en especial se plantea el estudio de la integración de elementos de disipación térmica y almacenamiento de calor mediante los materiales de cambio de fase (“Phase Change Materials – PCM”), todo esto con el objeto de favorecer el acondicionamiento térmico pasivo a través del elemento BIPV. Para validar dicha estrategia, se desarrolla una metodología experimental que consiste en el diseño y desarrollo de un prototipo denominado elemento BIPV/TF – PCM, así como un método de medida y caracterización en condiciones de laboratorio. Entre los logros alcanzados, destaca la multifuncionalidad de los elementos BIPV, el aprovechamiento de la energía residual del elemento, la reducción de los excedentes térmicos que puedan modificar el balance térmico de la envolvente del edificio, y las mejoras conseguidas en la producción eléctrica de los módulos fotovoltaicos por reducción de temperatura, lo que hará más sostenible la solución BIPV. Finalmente, como resultado del análisis teórico y experimental, esta tesis contribuye significativamente al estudio práctico de la adaptabilidad de los elementos BIPV en el entorno urbano por medio de una metodología que se basa en el desarrollo y puesta en marcha de una herramienta informática, que sirve tanto a ingenieros como arquitectos para verificar la calidad de la integración arquitectónica y calidad eléctrica de los elementos FV, antes, durante y después de la ejecución de un proyecto constructivo. ABSTRACT This Doctoral Thesis contributes to the analysis and development of new building elements that integrate power generation systems using photovoltaic solar cells (PV), particularly based on thin-film PV technology. For this propose, the architectural integration process is studied (concept known as "Building Integrated Photovoltaic - BIPV") by means of different methodologies. It begins with the study of existing PV elements and materials that are currently part of the building skins and the possible adaptation to different technologies. Subsequently, an integration strategy of PV elements in building materials is proposed. Double function of BIPV elements is considered, electrical and architectural, especially the heat dissipation and heat storage elements are studied, particularly the use Phase Change Materials– PCM in order to favor the thermal conditioning of buildings by means of the BIPV elements. For this propose, an experimental methodology is implemented, which consist of the design and develop of a prototype "BIPV/TF- PCM element" and measurement method (indoor laboratory conditions) in order to validate this strategy. Among the most important achievements obtained of this develop and results analysis includes, in particular, the multifunctionality of BIPV elements, the efficient use of the residual energy of the element, reduction of the excess heat that it can change the heat balance of the building envelope and improvements in electricity production of PV modules by reducing the temperature, are some benefits achieved that make the BIPV element will be more sustainable. Finally, as a result of theoretical and experimental analysis, this thesis contributes significantly to the practical study of the adaptability of BIPV elements in the urban environment by means of a novel methodology based on the development and implementation by computer software of a useful tool which serves as both engineers and architects to verify the quality of architectural integration and electrical performance of PV elements before, during, and after execution of a building projects.

Sistema portátil de medida de dispositivos sometidos a ensayos en campo

El proyecto fin de carrera “Sistema Portátil de Medida de Dispositivos Sometidos a Ensayos en Campo” es un proyecto acometido para el desarrollo y evaluación de un sistema de medición portátil y confiable, que permita la realización de mediciones de curvas I-V en campo, en condiciones reales de funcionamiento. Dado que la finalidad de este proyecto fin de carrera es la obtención de un sistema para la realización de mediciones en campo, en la implementación del proyecto se tendrán como requisitos principales de diseño el tamaño, la fuente de alimentación, el peso del sistema, además de la fiabilidad y una relativa precisión en la realización de mediciones. Durante la realización de este proyecto y dados los requerimientos anteriores de portabilidad y fiabilidad, se ha buscado ofrecer una solución de compromiso diseñando un equipamiento que sea realizable, que cumpla con los objetivos anteriores con un coste que no sea elevado y con la característica de que disponga de una facilidad de manejo que permita a cualquier usuario la utilización del mismo. El sistema final diseñado está basado en el dispositivo de adquisición de datos MyDAQ de National Instruments que permite la realización de múltiples tipos de mediciones. En base a este dispositivo de adquisición de datos, se ha diseñado un sistema de medición con una arquitectura que se implementa a través de un ordenador portátil, con un software de medición instalado que recopila e interpreta los datos, y que alimenta y controla al dispositivo a través del puerto USB. El sistema también implementa una carga variable que permite la medición de la curva I-V en iluminación de células o mini-paneles fotovoltaicos. Este diseño permite que para la realización de las mediciones de las curvas I-V en iluminación en campo sólo se requiera conectar el dispositivo de adquisición a un PC portátil con batería y a la carga variable. Aunque este diseño es específico para la medición de células solares se ha implementado de forma que pueda extrapolarse fácilmente a otro tipo de medición de tensión y corriente. Para la comprobación de la precisión del sistema portátil de medidas, durante el proyecto se ha procedido a la comparación de los resultados obtenidos del sistema diseñado con un equipo de caracterización en laboratorio. Dicho sistema de alta exactitud permite cuantificar la degradación real de la célula y establecer una comparación de mediciones con el sistema portátil de medida, ofreciendo resultados satisfactorios en todas las mediciones realizadas y permitiendo concluir la evaluación del sistema portátil como apto para las mediciones de dispositivos en campo. El proceso de evaluación del equipamiento diseñado consistiría en la medida de la curva I-V en laboratorio de un dispositivo fotovoltaico con instrumentación de alta precisión y condiciones controladas de luz y temperatura de un dispositivo, célula o mini-panel. Tras la medida inicial las células se instalarían en campo y se realizaría una caracterización periódica de los dispositivos mediante el sistema portátil de medida, que permitiría evidenciar si en la curva I-V bajo iluminación existe degradación, y en qué zona de la curva. Al finalizar el ensayo o en periodos intermedios se desmontarían los dispositivos para volver a medir la curva I-V con exactitud en laboratorio. Por tanto el sistema portátil de medida, debe permitir evaluar la evolución de la curva I-V en condiciones ambientales similares a obtenidas en medidas anteriores, y a partir de la misma determinar el modo de degradación del dispositivo, no siendo necesaria una elevada precisión de medida para ofrecer resultados exactos de degradación, que sólo podrán medirse en el laboratorio. ABSTRACT. The final degree project "Portable Measurement System For Devices Under Field Tests" is a project undertaken for the development and evaluation of portable and reliable measurement equipment, which allows the realization of I-V curve measurements in field conditions actual operation. Since the purpose of this final project is to obtain a system for conducting field measurements in the implementation of the project will have as main design requirements for size, power supply, system weight, plus reliability and precision relative to the taking of measurements. During the development of this project and given the above requirements portability and reliability, has sought to offer a compromise designing equipment that is achievable, that meets the above objectives with a cost that is not high and the feature that available management facility that allows any user to use it. The final system is designed based on the acquisition device MyDAQ NI data that allows the execution of multiple types of measurements. Based on this data acquisition device, we have designed a measurement system with an architecture that is implemented via a laptop, with measurement software installed that collects and interprets data, and feeds and controls the device through the USB port. The system also implements a variable load which allows measurement of the I-V curve lighting photovoltaic cells. This design allows performing measurements of I-V curves in lighting field is only required to connect the device to purchase a laptop with a battery and variable load. Although this design is specific for the measurement of solar cells has been implemented so that it can easily be extrapolated to other types of measuring voltage and current. To test the accuracy of the portable measurement system during the project has been carried out to compare the results of the designed system, a team of laboratory characterization. This system of high accuracy to quantify the actual degradation of the cell and a comparison of measurements with portable measurement system, providing satisfactory results in all measurements and allowing complete portable system assessment as suitable for measurements of devices field. The evaluation process designed equipment would be far laboratory I-V curve of a photovoltaic device with high precision instrumentation controlled light and temperature of a device, panel or mini-cell conditions. After initial measurement cells settle in a periodic field and device characterization will be achieved through the portable measurement system, which would show whether the I-V curve under illumination degradation exists, and in which area of the curve. At the end of the trial or in interim periods devices to remeasure the I-V curve accurately in laboratory dismount. Therefore the portable measurement system should allow evaluating the evolution of the I-V curve similar to previous measurements obtained in ambient conditions, and from it determine the mode of degradation of the device, not a high measurement accuracy to be necessary to provide degradation accurate results, which can only be measured in the laboratory.

Accurate Simulation of MPPT Methods Performance When Applied to Commercial Photovoltaic Panels

Anew, simple, and quick-calculationmethodology to obtain a solar panel model, based on the manufacturers’ datasheet, to perform MPPT simulations, is described. The method takes into account variations on the ambient conditions (sun irradiation and solar cells temperature) and allows fast MPPT methods comparison or their performance prediction when applied to a particular solar panel. The feasibility of the described methodology is checked with four different MPPT methods applied to a commercial solar panel, within a day, and under realistic ambient conditions.

Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4

The substitution of cation atoms by V, Cr and It in the natural and synthetic quaternary Cu2ZnSnS4 semiconductor is analyzed using first-principles methods. In most of the substitutions, the electronic structure of these modified CZTS is characterized for intermediate bands with different occupation and position within of the energy band gap. A study of the symmetry and composition of these intermediate bands is carried out for all substitutions. These bands permit additional photon absorption and emission channels depending on their occupation. The optical properties are obtained and analyzed. The absorption coefficients are split into contributions from the different absorption channels and from the inter- and intra-atomic components. The sub bandgap transitions are significant in many cases because the anion states contribute to the valence, conduction and intermediates bands. These properties could therefore be used for novel optoelectronic devices.

Analysis of SnS2 hyperdoped with V proposed as efficient absorber material

Intermediate-band materials can improve the photovoltaic efficiency of solar cells through the absorption of two subband-gap photons that allow extra electron-hole pair formations. Previous theoretical and experimental findings support the proposal that the layered SnS2 compound, with a band-gap of around 2 eV, is a candidate for an intermediate-band material when it is doped with a specific transition-metal. In this work we characterize vanadium doped SnS2 using density functional theory at the dilution level experimentally found and including a dispersion correction combined with the site-occupancy-disorder method. In order to analyze the electronic characteristics that depend on geometry, two SnS2 polytypes partially substituted with vanadium in symmetry-adapted non-equivalent configurations were studied. In addition the magnetic configurations of vanadium in a SnS2 2H-polytype and its comparison with a 4H-polytype were also characterized. We demonstrate that a narrow intermediate-band is formed, when these dopant atoms are located in different layers. Our theoretical predictions confirm the recent experimental findings in which a paramagnetic intermediate-band material in a SnS2 2H-polytype with 10% vanadium concentration is obtained.

Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices

The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity.