Microfabrication processes for microfluidic devices on a single laser Workstation: direct writing lithography on SU-8, laser ablation on polymers and mask manufacturing

We demonstrate the capability of a laser micromachining workstation for cost-effective manufacturing of a variety of microfluidic devices, including SU-8 microchannels on silicon wafers and 3D complex structures made on polyimide Kapton® or poly carbonate (PC). The workstation combines a KrF excimer laser at 248 nm and a Nd3+:YVO4 DPSS with a frequency tripled at 355 nm with a lens magnification 10X, both lasers working at a pulsed regime with nanoseconds (ns) pulse duration. Workstation also includes a high-resolution motorized XYZ-tilt axis (~ 1 um / axis) and a Through The Lens (TTL) imaging system for a high accurate positioning over a 120 x 120 mm working area. We have surveyed different fabrication techniques: direct writing lithography,mask manufacturing for contact lithography and polymer laser ablation for complex 3D devices, achieving width channels down to 13μ m on 50μ m SU-8 thickness using direct writing lithography, and width channels of 40 μm for polyimide on SiO2 plate. Finally, we have tested the use of some devices for capillary chips measuring the flow speed for liquids with different viscosities. As a result, we have characterized the presence of liquid in the channel by interferometric microscopy.

Experimental and numerical study of cw green laser crystallization of a-Si:H thin films

Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).

Laser Shock Microforming of Thin Metal Sheets with Q-Switched ns Lasers

The increasing demands in MEMS fabrication are leading to new requirements in production technology. Especially the packaging and assembly require high accuracy in positioning and high reproducibility in combination with low production costs. Conventional assembly technology and mechanical adjustment methods are time consuming and expensive. Each component of the system has to be positioned and fixed. Also adjustment of the parts after joining requires additional mechanical devices that need to be accessible after joining.

LSP Influence on Mechanical Properties of Thin Dissimilar Laser Welded Joints

Assessment of laser shock processing effects on mechanical resistance of thin dissimilar laser welded joints

Numerical prediction of residual stresses fields induced in thin Al2024-T351 sheets by laser shock processing

Outline: • Introduction • Numerical model SHOCKLAS© • Single LSP pulses • Overlapped LSP pulses • Discussion and Outlook

Assessment of laser peening induced effects on Ti6Al4V by non-destructive measurements

Assessment of laser peening induced effects on Ti6Al4V by destructive and non-destructive techniques

A method to obtain the thermal parameters and the photothermal transduction efficiency in an optical hyperthermia device based on laser irradiation of gold nanoparticles

Optical hyperthermia systems based on the laser irradiation of gold nanorods seem to be a promising tool in the development of therapies against cancer. After a proof of concept in which the authors demonstrated the efficiency of this kind of systems, a modeling process based on an equivalent thermal-electric circuit has been carried out to determine the thermal parameters of the system and an energy balance obtained from the time-dependent heating and cooling temperature curves of the irradiated samples in order to obtain the photothermal transduction efficiency. By knowing this parameter, it is possible to increase the effectiveness of the treatments, thanks to the possibility of predicting the response of the device depending on the working configuration. As an example, the thermal behavior of two different kinds of nanoparticles is compared. The results show that, under identical conditions, the use of PEGylated gold nanorods allows for a more efficient heating compared with bare nanorods, and therefore, it results in a more effective therapy.

Marco computacional para la definición de un modelo bio-inspirado en la señalización celular

Las Redes de Procesadores Evolutivos-NEP propuestas en [Mitrana et al., 2001], son un modelo computacional bio-inspirado a partir de la evolución de poblaciones de células, definiendo a nivel sintáctico algunas propiedades biológicas. En este modelo, las células están representadas por medio de palabras que describen secuencias de ADN. Informalmente, en algún instante de tiempo, el sistema evolutivo está representado por una colección de palabras cada una de las cuales representa una célula. El espacio genotipo de las especies, es un conjunto que recoge aquellas palabras que son aceptadas como sobrevivientes (es decir, como \correctas"). Desde el punto de vista de la evolución, las células pertenecen a especies y su comunidad evoluciona de acuerdo a procesos biológicos como la mutación y la división celular. éstos procesos representan el proceso natural de evolución y ponen de manifiesto una característica intrínseca de la naturaleza: el paralelismo. En este modelo, estos procesos son vistos como operaciones sobre palabras. Formalmente, el modelo de las NEP constituyen una arquitectura paralela y distribuida de procesamiento simbólico inspirada en la Máquina de conexión [Hillis, 1981], en el Paradigma de Flujo Lógico [Errico and Jesshope, 1994] y en las Redes de Procesadores Paralelos de Lenguajes (RPPL) [Csuhaj-Varju and Salomaa, 1997]. Al modelo NEP se han ido agregando nuevas y novedosas extensiones hasta el punto que actualmente podemos hablar de una familia de Redes de Procesadores Bio-inspirados (NBP) [Mitrana et al., 2012b]. Un considerable número de trabajos a lo largo de los últimos años han demostrado la potencia computacional de la familia NBP. En general, éstos modelos son computacionalmente completos, universales y eficientes [Manea et al., 2007], [Manea et al., 2010b], [Mitrana and Martín-Vide, 2005]. De acuerdo a lo anterior, se puede afirmar que el modelo NEP ha adquirido hasta el momento un nivel de madurez considerable. Sin embargo, aunque el modelo es de inspiración biológica, sus metas siguen estando motivadas en la Teoría de Lenguajes Formales y las Ciencias de la Computación. En este sentido, los aspectos biológicos han sido abordados desde una perspectiva cualitativa y el acercamiento a la realidad biológica es de forma meramente sintáctica. Para considerar estos aspectos y lograr dicho acercamiento es necesario que el modelo NEP tenga una perspectiva más amplia que incorpore la interacción de aspectos tanto cualitativos como cuantitativos. La contribución de esta Tesis puede considerarse como un paso hacia adelante en una nueva etapa de los NEPs, donde el carácter cuantitativo del modelo es de primordial interés y donde existen posibilidades de un cambio visible en el enfoque de interés del dominio de los problemas a considerar: de las ciencias de la computación hacia la simulación/modelado biológico y viceversa, entre otros. El marco computacional que proponemos en esta Tesis extiende el modelo de las Redes de Procesadores Evolutivos (NEP) y define arquitectura inspirada en la definición de bloques funcionales del proceso de señalización celular para la solución de problemas computacionales complejos y el modelado de fenómenos celulares desde una perspectiva discreta. En particular, se proponen dos extensiones: (1) los Transductores basados en Redes de Procesadores Evolutivos (NEPT), y (2) las Redes Parametrizadas de Procesadores Evolutivos Polarizados (PNPEP). La conservación de las propiedades y el poder computacional tanto de NEPT como de PNPEP se demuestra formalmente. Varias simulaciones de procesos relacionados con la señalización celular son abordadas sintáctica y computacionalmente, con el _n de mostrar la aplicabilidad e idoneidad de estas dos extensiones. ABSTRACT Network of Evolutionary Processors -NEP was proposed in [Mitrana et al., 2001], as a computational model inspired by the evolution of cell populations, which might model some properties of evolving cell communities at the syntactical level. In this model, cells are represented by words which encode their DNA sequences. Informally, at any moment of time, the evolutionary system is described by a collection of words, where each word represents one cell. Cells belong to species and their community evolves according to mutations and division which are defined by operations on words. Only those cells accepted as survivors (correct) are represented by a word in a given set of words, called the genotype space of the species. This feature is analogous with the natural process of evolution. Formally, NEP is based on an architecture for parallel and distributed processing inspired from the Connection Machine [Hillis, 1981], the Flow Logic Paradigm [Errico and Jesshope, 1994] and the Networks of Parallel Language Processors (RPPL) [Csuhaj-Varju and Salomaa, 1997]. Since the date when NEP was proposed, several extensions and variants have appeared engendering a new set of models named Networks of Bio-inspired Processors (NBP) [Mitrana et al., 2012b]. During this time, several works have proved the computational power of NBP. Specifically, their efficiency, universality, and computational completeness have been thoroughly investigated [Manea et al., 2007, Manea et al., 2010b, Mitrana and Martín-Vide, 2005]. Therefore, we can say that the NEP model has reached its maturity. Nevertheless, although the NEP model is biologically inspired, this model is mainly motivated by mathematical and computer science goals. In this context, the biological aspects are only considered from a qualitative and syntactical perspective. In view of this lack, it is important to try to keep the NEP theory as close as possible to the biological reality, extending their perspective incorporating the interplay of qualitative and quantitative aspects. The contribution of this Thesis, can be considered as a starting point in a new era of the NEP model. Then, the quantitative character of the NEP model is mandatory and it can address completely new different types of problems with respect to the classical computational domain (e.g. from the computer science to system biology). Therefore, the computational framework that we propose extends the NEP model and defines an architecture inspired by the functional blocks from cellular signaling in order to solve complex computational problems and cellular phenomena modeled from a discrete perspective. Particularly, we propose two extensions, namely: (1) Transducers based on Network of Evolutionary Processors (NEPT), and (2) Parametrized Network of Polarized Evolutionary Processors (PNPEP). Additionally, we have formally proved that the properties and computational power of NEP is kept in both extensions. Several simulations about processes related with cellular signaling both syntactical and computationally have been considered to show the model suitability.

High-Power High-Efficiency Laser Power Transmission at 100m Using Optimized Multi-Cell GaAs Converter

A high-power high-efficiency laser power transmission system at 100m based on an optimized multi-cell GaAs converter capable of supplying 9.7W of electricity is demonstrated. An I-V testing system integrated with a data acquisition circuit and an analysis software is designed to measure the efficiency and the I-V characteristics of the laser power converter (LPC). The dependencies of the converter’s efficiency with respect to wavelength, laser intensity and temperature are analyzed. A diode laser with 793nm of wavelength and 24W of power is used to test the LPC and the software. The maximum efficiency of the LPC is 48.4% at an input laser power of 8W at room temperature. When the input laser power is 24W (laser intensity of 60000W/m2), the efficiency is 40.4% and the output voltage is 4 V. The overall efficiency from electricity to electricity is 11.6%.

Experimental implementation of a biometric laser synaptic sensor

We fabricate a biometric laser fiber synaptic sensor to transmit information from one neuron cell to the other by an optical way. The optical synapse is constructed on the base of an erbium-doped fiber laser, whose pumped diode current is driven by a pre-synaptic FitzHugh–Nagumo electronic neuron, and the laser output controls a post-synaptic FitzHugh–Nagumo electronic neuron. The implemented laser synapse displays very rich dynamics, including fixed points, periodic orbits with different frequency-locking ratios and chaos. These regimes can be beneficial for efficient biorobotics, where behavioral flexibility subserved by synaptic connectivity is a challenge.

Fotodiodos basados en (Zn,Mg)O para la detección de luz ultravioleta

La presente tesis fue ideada con el objetivo principal de fabricar y caracterizar fotodiodos Schottky en capas de ZnMgO y en estructuras de pozo cuántico ZnMgO/ZnO para la detección de luz UV. La elección de este material semiconductor vino motivada por la posibilidad que ofrece de detectar y procesar señales simultáneamente, en un amplio margen de longitudes de onda, al igual que su más directo competidor el GaN. En esta memoria se da en primer lugar una visión general de las propiedades estructurales y ópticas del ZnO, prestando especial atención a su ternario ZnMgO y a las estructuras de pozo cuántico ZnMgO/ZnO. Además, se han desarrollado los conocimientos teóricos necesarios para una mejor compresión y discusión de los resultados alcanzados. En lo que respecta a los resultados de esta memoria, en esencia, estos se dividen en dos bloques. Fotodiodos desarrollados sobre capas delgadas de ZnMgO no-polar, y sobre estructuras de pozo cuántico de ZnMgO/ZnO no-polares y semipolares Fotodiodos de capas delgadas de ZnMgO. Es bien conocido que la adición de Mg a la estructura cristalina del ZnO desplaza el borde de absorción hacia energías mayores en el UV. Se ha aprovechado esto para fabricar fotodiodos Schottky sobre capas de ZnMgO crecidas por MOCVD y MBE, los cuales detecten en un ventana de energías comprendida entre 3.3 a 4.6 eV. Sobre las capas de ZnMgO, con diferentes contenidos de Mg(5.6-18.0 %), crecidas por MOCVD se han fabricado fotodiodos Schottky. Se han estudiado en detalle las curvas corrientevoltaje (I-V). Seguidamente, se ha realizado un análisis de la respuesta espectral bajo polarización inversa. Tanto los valores de responsividad obtenidos como el contraste UV/VIS están claramente aumentados por la presencia de ganancia. Paralelamente, se han realizado medidas de espectroscopia de niveles profundos (DLOS), identificándose la presencia de dos niveles profundos de carácter aceptor. El papel desempeñado por estos en la ganancia ha sido analizado meticulosamente. Se ha demostrado que cuando estos son fotoionizados son responsables directos del gran aumento de la corriente túnel que se produce a través de la barrera Schottky, dando lugar a la presencia de la ganancia observada, que además resulta ser función del flujo de fotones incidente. Para extender el rango detección hasta 4.6 eV se fabricaron fotodiodos sobre capas de ZnMgO de altísima calidad cristalina crecidas por MBE. Sobre estos se ha realizado un riguroso análisis de las curvas I-V y de las curvas capacidad-voltaje (CV), para posteriormente identificar los niveles profundos presentes en el material, mediante la técnica de DLOS. Así mismo se ha medido la respuesta espectral de los fotodetectores, la cual muestra un corte abrupto y un altísimo contraste UV/VIS. Además, se ha demostrado como estos son perfectos candidatos para la detección de luz en la región ciega al Sol. Por otra parte, se han fabricado fotodiodos MSM sobre estas mismas capas. Se han estudiado las principales figuras de mérito de estos, observándose unas corrientes bajas de oscuridad, un contraste UV/VIS de 103, y la presencia de fotocorriente persistente. Fotodiodos Schottky de pozos cuánticos de ZnO/ZnMgO. En el segundo bloque de esta memoria, con el objeto final de clarificar el impacto que tiene el tratamiento del H2O2 sobre las características optoelectrónicas de los dispositivos, se ha realizado un estudio detallado, en el que se han analizado por separado fotodiodos tratados y no tratados con H2O2, fabricados sobre pozos cuánticos de ZnMgO/ZnO. Se ha estudiado la respuesta espectral en ambos casos, observándose la presencia de ganancia en los dos. A través de un análisis meticuloso de las características electrónicas y optoeletrónicas de los fotodiodos, se han identificado dos mecanismos de ganancia internos diferentes en función de que la muestra sea tratada o no-tratada. Se han estudiado fotodetectores sensibles a la polarización de la luz (PSPDs) usando estructuras de pozo cuántico no-polares y semipolares sobre sustratos de zafiro y sustratos de ZnO. En lo que respecta a los PSPDs sobre zafiro, en los cuales el pozo presenta una tensión acumulada en el plano, se ha visto que el borde de absorción se desplaza _E _21 meV con respecto a luz linealmente polarizada perpendicular y paralela al eje-c, midiéndose un contraste (RE || c /RE c)max _ 6. Con respecto a los PSPDs crecidos sobre ZnO, los cuales tienen el pozo relajado, se ha obtenido un 4E _30-40, y 21 meV para las heteroestructuras no-polar y semipolar, respectivamente. Además el máximo contraste de responsividad fue de (RE || c /RE c)max _ 6 . Esta sensibilidad a la polarización de la luz ha sido explicada en términos de las transiciones excitónicas entre la banda de conducción y las tres bandas de valencia. ABSTRACT The main goal of the present thesis is the fabrication and characterization of Schottky photodiodes based on ZnMgO layers and ZnMgO / ZnO quantum wells (QWs) for the UV detection. The decision of choosing this semiconductor was mainly motivated by the possibility it offers of detecting and processing signals simultaneously in a wide range of wavelengths like its main competitor GaN. A general overview about the structural and optical properties of ZnO, ZnMgO layers and ZnMgO/ZnO QWs is given in the first part of this thesis. Besides, it is shown the necessary theoretical knowledge for a better understanding of the discussion presented here. The results of this thesis may be divided in two parts. On the one hand, the first part is based on studying non-polar ZnMgO photodiodes. On the other hand, the second part is focused on the characterization of non-polar and semipolar ZnMgO / ZnO QWs Schottky photodiodes. ZnMgO photodiodes. It is well known that the addition of Mg in the crystal structure of ZnO results in a strong blue-shift of the ZnO band-gap. Taking into account this fact Schottky photodiodes were fabricated on ZnMgO layers grown by MOCVD and MBE. Concerning ZnMgO layers grown by MOCVD, a series of Schottky photodiodes were fabricated, by varying the Mg content from 5.6% to 18 %. Firstly, it has been studied in detail the current-voltage curves. Subsequently, spectral response was analyzed at reverse bias voltage. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism. Simultaneously, measurements of deep level optical spectroscopy were carried out, identifying the presence of two acceptor-like deep levels. The role played for these in the gain observed was studied in detail. It has been demonstrated that when these are photoionized cause a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux. In order to extend the detection range up to 4.6 eV, photodiodes ZnMgO grown by MBE were fabricated. An exhaustive analysis of the both I-V and CV characteristics was performed. Once again, deep levels were identified by using the technique DLOS. Furthermore, the spectral response was measured, observing sharp absorption edges and high UV/VIS rejections ratio. The results obtained have confirmed these photodiodes are excellent candidates for the light detection in the solar-blind region. In addition, MSM photodiodes have also been fabricated on the same layers. The main figures of merit have been studied, showing low dark currents, a large UV/VIS rejection ratio and persistent photocurrent. ZnMgO/ZnO QWs photodiodes. The second part was focused on ZnMgO/ ZnO QWs. In order to clarify the impact of the H2O2 treatment on the performance of the Schottky diodes, a comparative study using treated and untreated ZnMgO/ZnO photodiodes has been carried out. The spectral response in both cases has shown the presence of gain, under reverse bias. Finally, by means of the analysis of electronic and optoelectronic characteristics, two different internal gain mechanisms have been indentified in treated and non-treated material. Light polarization-sensitive UV photodetectors (PSPDs) using non-polar and semipolar ZnMgO/ZnO multiple quantum wells grown both on sapphire and ZnO substrates have been demonstrated. For the PSPDs grown on sapphire with anisotropic biaxial in-plain strain, the responsivity absorption edge shifts by _E _21 meV between light polarized perpendicular and parallel to the c-axis, and the maximum responsivity contrast is (RE || c /RE c)max _ 6 . For the PSPDs grown on ZnO, with strain-free quantum wells, 4E _30-40, and 21 meV for non-polar and semipolar heterostructures, and maximum (R /R||)max _10. for non-polar heterostructure was achieved. These light polarization sensitivities have been explained in terms of the excitonic transitions between the conduction and the three valence bands.

An initial study on atmospheric pressure ion transport by laser ionization and electrostatic fields.

Laser ionization of mixtures of gases at atmospheric pressure and the subsequent transport through electrostatic field is studied. A prototype is designed to perform the transport and detection of the ions. Relevance of the composition of the mixture of gases and ionization parameters is shown

Laminar counterflow parallel-plate heat exchangers: Exact and approximate solutions

Multilayered, counterflow, parallel-plate heat exchangers are analyzed numerically and theoretically. The analysis, carried out for constant property fluids, considers a hydrodynamically developed laminar flow and neglects longitudinal conduction both in the fluid and in the plates. The solution for the temperature field involves eigenfunction expansions that can be solved in terms of Whittaker functions using standard symbolic algebra packages, leading to analytical expressions that provide the eigenvalues numerically. It is seen that the approximate solution obtained by retaining the first two modes in the eigenfunction expansion provides an accurate representation for the temperature away from the entrance regions, specially for long heat exchangers, thereby enabling simplified expressions for the wall and bulk temperatures, local heat-transfer rate, overall heat-transfer coefficient, and outlet bulk temperatures. The agreement between the numerical and theoretical results suggests the possibility of using the analytical solutions presented herein as benchmark problems for computational heat-transfer codes.

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

FTCS finite difference scheme GPGPU parallel computing for the heat conduction equation = Programación en paralelo GPGPU del método en diferencias finitas FTCS para la ecuación del calor

En el presente artículo se muestran las ventajas de la programación en paralelo resolviendo numéricamente la ecuación del calor en dos dimensiones a través del método de diferencias finitas explícito centrado en el espacio FTCS. De las conclusiones de este trabajo se pone de manifiesto la importancia de la programación en paralelo para tratar problemas grandes, en los que se requiere un elevado número de cálculos, para los cuales la programación secuencial resulta impracticable por el elevado tiempo de ejecución. En la primera sección se describe brevemente los conceptos básicos de programación en paralelo. Seguidamente se resume el método de diferencias finitas explícito centrado en el espacio FTCS aplicado a la ecuación parabólica del calor. Seguidamente se describe el problema de condiciones de contorno y valores iniciales específico al que se va a aplicar el método de diferencias finitas FTCS, proporcionando pseudocódigos de una implementación secuencial y dos implementaciones en paralelo. Finalmente tras la discusión de los resultados se presentan algunas conclusiones. In this paper the advantages of parallel computing are shown by solving the heat conduction equation in two dimensions with the forward in time central in space (FTCS) finite difference method. Two different levels of parallelization are consider and compared with traditional serial procedures. We show in this work the importance of parallel computing when dealing with large problems that are impractical or impossible to solve them with a serial computing procedure. In the first section a summary of parallel computing approach is presented. Subsequently, the forward in time central in space (FTCS) finite difference method for the heat conduction equation is outline, describing how the heat flow equation is derived in two dimensions and the particularities of the finite difference numerical technique considered. Then, a specific initial boundary value problem is solved by the FTCS finite difference method and serial and parallel pseudo codes are provided. Finally after results are discussed some conclusions are presented.