Tunable mechanical resonator with aluminum nitride piezoelectric

The electromechanical response of piezoelectrically-actuated AlN micromachined bridge resonators has been characterized using laser interferometry and electrical admittance measurements. We compare the response of microbridges with different dimensions and buckling (induced by the initial residual stress of the layers). The resonance frequencies are in good agreement with numerical simulations of the electromechanical behavior of the structures. We show that it is possible to perform a rough tuning of the resonance frequencies by allowing a determined amount of builtin stress in the microbridge during its fabrication. Once the resonator is made, a DC bias added to the AC excitation signal allows to fine-tune the frequency. Our microbridges yield a tuning factor of around 88 Hz/V for a 500 ?m-long microbridge.

Amorphous piezoresistive and piezoelectric sensors for robotics applications

Ultrasonic transducers have often been used in the development of sensory systems for robotics applications. In most cases, these sensory systems are based on the determination of times of flight for signals from every transducer. In this work we have used piezoresistive and piezoelectric materials to measure the instant and position collision in metallic structures by using the difference of the times of propagation of an acoustic wave when it is produced over a ferromagnetic (iron, steel or another material) based structure. An immediate application of the proposed method is the detection and location of impacts over the metallic links of an industrial robot or the collision position in a metallic structure for an automated inspection

Cross-talk response analysis on a piezoelectric

The study of the cross-talk and its effects in the performance of a matrix array of piezoelectric elements is an important issue. This corresponds to the study of the cross mode of vibration of each one of the piezoelectric elements that form the ultrasonic array. The aim is to detect and measure the cross-talk that is generated for the cross mode of vibration. In order to accomplish this task, an array of 2x3 elements was designed and developed. This was constructed using 8 MHz piezoelectric ceramics. A number of configurations have been experimented, considering the excitation of an increasing number of elements, in order to detect and measure the propagation of wave interference. Initial results show the way cross-talk interferes the beam generated by the array, this causing attenuation of the main beam and other negative effects.

Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content

In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.

Modeling Piezoelectric Harvesting Materials in Road Traffic Applications.

En esta comunicación se presenta el método para obtener modelos equivalentes eléctricos de materiales piezoeléctricos utilizados en entornos con tráfico vial para aplicaciones "Energy Harvesting". Los resultados experimentales se procesan para determinar la estructura topológica óptima y la tecnología de los elementos semiconductores utilizados en la etapa de entrada del sistema de alimentación "harvesting". Asimismo se presenta el modelo de la fuente de alimentación no regulada bajo demanda variable de corriente. Abstract: The method to obtain electrical equivalent models of piezoelectric materials used in energy harvesting road traffic environment is presented in this paper. The experimental results are processed in order to determine the optimal topological structure and technology of the semiconductor elements used in the input stage of the power harvesting system. The non regulated power supply model under variable current demand is also presented.

Simulation, construction and characterization of a piezoelectric transducer using rexolite as acoustic matching

This article describes the simulation and characterization of an ultrasonic transducer using a new material called Rexolite to be used as a matching element. This transducer was simulated using a commercial piezoelectric ceramic PIC255 at 8 MHz. Rexolite, the new material, presents an excellent acoustic matching, specially in terms of the acoustic impedance of water. Finite elements simulations were used in this work. Rexolite was considered as a suitable material in the construction of the transducer due to its malleability and acoustic properties, to validate the simulations a prototype transducer was constructed. Experimental measurements were used to determine the resonance frequency of the prototype transducer. Simulated and experimental results were very similar showing that Rexolite may be an excellent matching, particularly for medical applications.

Piezoelectric sensors system for impact detecting

This work describes an acoustic system that allows the automatic detection and location of mechanical impacts on metallic based structures, which is suitable in robotics and industrial applications. The system is based on the time delays of propagation of the acoustic waves along the metallic based structure and it determines the instant and the position when and were the impact has been produced by piezoelectric sensors and an electronic-computerized system. We have obtained that for distance impact of 40 cm and 50 cm the time delay is 2 s and 72 s respectively.

High-fidelity piezoelectric loudspeaker

This project reports on a literature review about piezoelectric loudspeakers and on an experimental research about how to improve some features of a particular horned piezoelectric tweeter. The work involves an investigation of the performance and principle of operation of piezoelectric loudspeakers to understand how the sound is generated and what its main parameters are. Also, previous research papers about how to improve this type of speakers are reported. The knowledge gained was used to reconsider and re-purpose a particular piezoelectric transducer. After characterising the original state of the device with acoustical and electroacoustical measurements, some improvements were implemented. Moreover, interesting conclusions were reached based on the results of the tests that were carried out. A structural study with a scanning laser was then completed. These sections demonstrated the need for providing the speaker with a rear suspension that guides the vibration of the membrane. Finally, an inverse filter was designed in order to get a flat output response. After simulating the results with Matlab, validating experiments were run in the anechoic chamber with great success. RESUMEN. Este proyecto consta de un estudio detallado sobre piezoelectricidad y altavoces piezoeléctricos, así como de una parte experimental consistente en mejorar algunas características de un altavoz piezoeléctrico particular: un tweeter de bocina. El estudio profundiza en cuáles son los principios de funcionamiento y los principales parámetros de este tipo de altavoces. Con el conocimiento adquirido a partir de trabajos de previos sobre el tema e investigación bibliográfica se ha llevado a cabo la parte experimental. Esta parte ha requerido de una serie de medidas acústicas y electroacústicas para, primero, caracterizar el altavoz en su estado original y para posteriormente buscar y validar posibles mejoras, principalmente en la respuesta en frecuencia. Además, se ha realizado un estudio estructural del diafragma a partir de medidas tomadas con un vibrómetro laser Doppler. De estos tres procesos se concluyó que el altavoz bajo estudio tiene un problema en el soporte del cristal piezoeléctrico y se demostró la necesidad de equipar el dispositivo de una suspensión trasera que controle el movimiento del diafragma. Finalmente, se ha diseñado e implementado en Matlab un filtro inverso, con el objetivo de conseguir una respuesta plana a la salida del altavoz. Su funcionamiento fue validado en la cámara anecoica satisfactoriamente.

CMOS integration of AlN based piezoelectric microcantilevers

El gran crecimiento de los sistemas MEMS (Micro Electro Mechanical Systems) así como su presencia en la mayoría de los dispositivos que usamos diariamente despertó nuestro interés. Paralelamente, la tecnología CMOS (Complementary Metal Oxide Semiconductor) es la tecnología más utilizada para la fabricación de circuitos integrados. Además de ventajas relacionadas con el funcionamiento electrónico del dispositivo final, la integración de sistemas MEMS en la tecnología CMOS reduce significantemente los costes de fabricación. Algunos de los dispositivos MEMS con mayor variedad de aplicaciones son los microflejes. Estos dispositivos pueden ser utilizados para la extracción de energía, en microscopios de fuerza atómica o en sensores, como por ejemplo, para biodetección. Los materiales piezoeléctricos más comúnmente utilizados en aplicaciones MEMS se sintetizan a altas temperaturas y por lo tanto no son compatibles con la tecnología CMOS. En nuestro caso hemos usado nitruro de alumino (AlN), que se deposita a temperatura ambiente y es compatible con la tecnología CMOS. Además, es biocompatible, y por tanto podría formar parte de un dispositivo que actúe como biosensor. A lo largo de esta tesis hemos prestado especial atención en desarrollar un proceso de fabricación rápido, reproducible y de bajo coste. Para ello, todos los pasos de fabricación han sido minuciosamente optimizados. Los parámetros de sputtering para depositar el AlN, las distintas técnicas y recetas de ataque, los materiales que actúan como electrodos o las capas sacrificiales para liberar los flejes son algunos de los factores clave estudiados en este trabajo. Una vez que la fabricación de los microflejes de AlN ha sido optimizada, fueron medidos para caracterizar sus propiedades piezoeléctricas y finalmente verificar positivamente su viabilidad como dispositivos piezoeléctricos. ABSTRACT The huge growth of MEMS (Micro Electro Mechanical Systems) as well as their presence in most of our daily used devices aroused our interest on them. At the same time, CMOS (Complementary Metal Oxide Semiconductor) technology is the most popular technology for integrated circuits. In addition to advantages related with the electronics operation of the final device, the integration of MEMS with CMOS technology reduces the manufacturing costs significantly. Some of the MEMS devices with a wider variety of applications are the microcantilevers. These devices can be used for energy harvesting, in an atomic force microscopes or as sensors, as for example, for biodetection. Most of the piezoelectric materials used for these MEMS applications are synthesized at high temperature and consequently are not compatible with CMOS technology. In our case we have used aluminum nitride (AlN), which is deposited at room temperature and hence fully compatible with CMOS technology. Otherwise, it is biocompatible and and can be used to compose a biosensing device. During this thesis work we have specially focused our attention in developing a high throughput, reproducible and low cost fabrication process. All the manufacturing process steps of have been thoroughly optimized in order to achieve this goal. Sputtering parameters to synthesize AlN, different techniques and etching recipes, electrode material and sacrificial layers are some of the key factors studied in this work to develop the manufacturing process. Once the AlN microcantilevers fabrication was optimized, they were measured to characterize their piezoelectric properties and to successfully check their viability as piezoelectric devices.

Piezoelectric sensing and non-parametric statistical signal processing for health monitoring of hysteretic dampers used in seismic-resistant structures

The paper proposes a new application of non-parametric statistical processing of signals recorded from vibration tests for damage detection and evaluation on I-section steel segments. The steel segments investigated constitute the energy dissipating part of a new type of hysteretic damper that is used for passive control of buildings and civil engineering structures subjected to earthquake-type dynamic loadings. Two I-section steel segments with different levels of damage were instrumented with piezoceramic sensors and subjected to controlled white noise random vibrations. The signals recorded during the tests were processed using two non-parametric methods (the power spectral density method and the frequency response function method) that had never previously been applied to hysteretic dampers. The appropriateness of these methods for quantifying the level of damage on the I-shape steel segments is validated experimentally. Based on the results of the random vibrations, the paper proposes a new index that predicts the level of damage and the proximity of failure of the hysteretic damper

Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers

A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoelectric cantilevers has been developed. The fabrication process is suitable for standard silicon technology and provides low-cost and high-throughput manufacturing. This work reports design, fabrication and characterization of piezoelectric cantilevers based on aluminum nitride (AlN) thin films synthesized at room temperature. The proposed microcantilever system is a sandwich structure composed of chromium (Cr) electrodes and a sputtered AlN film. The key issue for cantilever fabrication is the growth at room temperature of the AlN layer by reactive sputtering, making possible the innovative compatibility of piezoelectric MEMS devices with CMOS circuits already processed. AlN and Cr have been etched by inductively coupled plasma (ICP) dry etching using a BCl3–Cl2–Ar plasma chemistry. As part of the novelty of the post-CMOS micromachining process presented here, a silicon Si (1 0 0) wafer has been used as substrate as well as the sacrificial layer used to release the microcantilevers. In order to achieve this, the Si surface underneath the structure has been wet etched using an HNA (hydrofluoric acid + nitric acid + acetic acid) based solution. X-ray diffraction (XRD) characterization indicated the high crystalline quality of the AlN film. An atomic force microscope (AFM) has been used to determine the Cr electrode surface roughness. The morphology of the fabricated devices has been studied by scanning electron microscope (SEM). The cantilevers have been piezoelectrically actuated and their out-of-plane vibration modes were detected by vibrometry.

Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature

Multiple Frequency Solidly Mounted BAW Filters

This paper reports the simultaneous fabrication of Receive and Transmit Bulk Acoustic Wave filters for the WCDMA standard on the same die. Both filters are based on Solidly Mounted Resonators using a common Bragg mirror, but with each having a specific piezoelectric film thickness. Electrical measurements reveal that the process steps required to provide the two different piezoelectric film thicknesses on the same die does not impact the electrical performances of resonators and filters and that this approach could thus be generalised to more than two filters.

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs

The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature.