Smooth light extraction in lighting optical fibre

Smooth light extraction in lighting optical fibre

Enhanced external radiative efficiency for 20.8 efficient single-junction GaInP solar cells

We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction.

LED backlight designs with the flow-line method

An LED backlight has been designed using the flow-line design method. This method allows a very efficient control of the light extraction. The light is confined inside the guide by total internal reflection, being extracted only by specially calculated surfaces: the ejectors. Backlight designs presented here have a total optical efficiency of up to 80% (including Fresnel and absorption losses) with an FWHM below 30 degrees. The experimental results of the first prototype are shown.

Liquid lead and Lithium. A Comprehensive molecular dynamics study

Pb17Li is today a reference breeder material in diverse fusion R&D programs worldwide. One of the main issues in these programs is the problem of liquid metals breeder blanket behavior. Structural material of the blanket should meet high requirements because of extreme operating conditions. Therefore the knowledge of eutectic properties like optimal composition, physical and thermodynamic behavior or diffusion coefficients of Tritium are extremely necessary for current designs. In particular, the knowledge of the function linking the tritium concentration dissolved in liquid materials with the tritium partial pressure at a liquid/gas interface in equilibrium, CT=f(PT), is of basic importance because it directly impacts all functional properties of a blanket determining: tritium inventory, tritium permeation rate and tritium extraction efficiency. Nowadays, understanding the structure and behavior of this compound is a real goal in fusion engineering and materials science. Simulations of liquids can provide much information to the community; not only supplementing experimental data, but providing new tests of theories and ideas, making specific predictions that require experimental tests, and ultimately helping to lead to the deeper understanding and better predictive behavior.

New simulations to qualify eutectic lithium-lead as breeder material

Pb17Li is today a reference breeder material in diverse fusion R&D programs worldwide. One of the main issues is the problem of liquid metals breeder blanket behavior. The knowledge of eutectic properties like optimal composition, physical and thermodynamic behavior or diffusion coefficients of Tritium are extremely necessary for current designs. In particular, the knowledge of the function linking the tritium concentration dissolved in liquid materials with the tritium partial pressure at a liquid/gas interface in equilibrium, CT =f(PT ), is of basic importance because it directly impacts all functional properties of a blanket determining: tritium inventory, tritium permeation rate and tritium extraction efficiency. Nowadays, understanding the structure and behavior of this compound is a real goal in fusion engineering and materials science. Atomistic simulations of liquids can provide much information; not only supplementing experimental data, but providing new tests of theories and ideas, making specific predictions that require experimental tests, and ultimately helping to a deeper understanding

Estudios de eficiencia en el uso de la luz y estimaciones de biomasa en cultivos energéticos de Salix sp. en Central New York, USA

La productividad es un factor importante que influye en la viabilidad económica de un cultivo energético de sauce y maximizarla se convierte en un tema primordial. Esta investigación está directamente relacionada con dicha característica. La productividad varía según los clones cultivados, que pueden ser mejorados y seleccionados genéticamente. Los programas genéticos requieren de una información previa (productividad media en función del porte y número de los tallos, características de las hojas, resistencia a las plagas, etc.) que ayudará a obtener clones más productivos y resistentes. Por ello, nuestra investigación consta de dos estudios: (1) Evaluación de la eficiencia del uso de la luz o LUE (Light Use Efficiency). El incremento de biomasa y la eficiencia del uso de la luz (LUE) fue estudiado en 15 clones del genero Salix durante los meses de junio a septiembre de 2011 en Belleville (Central New York, USA). Los objetivos de este estudio fueron: (1) Evaluar la eficiencia del uso de la luz en la explicación a la variación en la producción de biomasa y (2) Determinar si existen diferencias significativas entre clones evaluando el índice de área foliar (LAI) y algunos componentes de las hojas (N, P, K,…). Se concluye que la variación de biomasa está relacionada con la cantidad de luz interceptada y con la eficiencia de su uso. Dicha información debe de ser transferida para ayudar a mejorar genéticamente los futuros clones a comercializar, con el fin de maximizar la productividad y aumentar la resistencia a plagas. (2) Estimación de biomasa a través de modelos de regresión. Los estudios de investigación relacionados con la productividad requieren estimaciones no destructivas de la biomasa aérea. Sin embargo, el nivel de precisión requerido y la inversión de tiempo son excesivos para operaciones comerciales con grandes extensiones (plantaciones de 10.000 ha). Por esta razón, se estudia el nivel de especificidad (específico, intermedio y general) en la toma de datos de campo sobre los mismos 15 clones (12 de ellos se pueden agrupar en 5 grupos según su genotipo origen) del genero Salix, empleados en el estudio anterior. Para todos los niveles estudiados se observaron diferencias significativas. Pero desde nuestro punto de vista, las diferencias obtenidas no son relevantes. Para validar los modelos finalmente seleccionados se calcularon los porcentajes de error entre la biomasa estimada por los modelos de regresión calculados y la biomasa real obtenida tras los pesajes de biomasa, todo ello se realizó para cada clon según nivel de especificidad. ABSTRACT Productivity is an important factor in the economic viability of a willow crop´s, therefore, maximize it becomes a major factor. This study is directly related to this feature. Productivity, among other factors, may vary depending on different clones, which can be improved and selected genetically. Genetic programs require prior information (average productivity, size and number of stems, leaf characteristics, resistance to pests, etc.) to help you get more productive clones resistant to local pests. Our research consists of two studies: (1) Evaluation of the efficiency of use of light (LUE, Light Use Efficiency). The increase of biomass and light use efficiency (LUE) was tested on 15 clones of the genus Salix during June and September 2011 in Belleville (Central New York, USA). The objectives of this study were: (1) evaluate the light use efficiency and its relationship with the variation in biomass production and (2) determine whether there are significant differences between clones evaluating the leaf area index (LAI) and some traits of the leaves (N, P, K). We studied the correlation with the light use efficiency. It is concluded that the variation of biomass was related to the amount of light intercepted and its efficiency. Such information must be transferred to help improve future genetically clones to market in order to maximize productivity and increase resistance to pests. (2) Estimation of biomass through regression models. Research studies related to productivity estimates require precision and non destructive biomass. However, the level of accuracy required and the investment of time are excessive for large commercial operations with extensions (plantations of 10,000 ha). Precisely for this reason, we study the level of specificity (specific, intermediate and general) in making field data on the same 15 clones (12 of them can be grouped into five groups according to their genotype origin) of the genus Salix, employees in the previous study. For all levels studied some significant differences were observed. But from our practical standpoint, the differences are not relevant. Finally, to validate the selected models, we calculated the percent of bias between estimated biomass (by the regression models) and real biomass obtained after the weighing of biomass, all this process was done for each clone by level of specificity.

Properties and applications of high electron density structures based on InN and related compounds

El objetivo principal del presente trabajo es estudiar y explotar estructuras que presentan un gas bidimensional de electrones (2DEG) basadas en compuestos nitruros con alto contenido de indio. Existen muchas preguntas abiertas, relacionadas con el nitruro de indio y sus aleaciones, algunas de las cuales se han abordado en este estudio. En particular, se han investigado temas relacionados con el análisis y la tecnología del material, tanto para el InN y heteroestructuras de InAl(Ga)N/GaN como para sus aplicaciones a dispositivos avanzados. Después de un análisis de la dependencia de las propiedades del InN con respecto a tratamientos de procesado de dispositivos (plasma y térmicos), el problema relacionado con la formación de un contacto rectificador es considerado. Concretamente, su dificultad es debida a la presencia de acumulación de electrones superficiales en la forma de un gas bidimensional de electrones, debido al pinning del nivel de Fermi. El uso de métodos electroquímicos, comparados con técnicas propias de la microelectrónica, ha ayudado para la realización de esta tarea. En particular, se ha conseguido lamodulación de la acumulación de electrones con éxito. En heteroestructuras como InAl(Ga)N/GaN, el gas bidimensional está presente en la intercara entre GaN y InAl(Ga)N, aunque no haya polarización externa (estructuras modo on). La tecnología relacionada con la fabricación de transistores de alta movilidad en modo off (E-mode) es investigada. Se utiliza un método de ataque húmedo mediante una solución de contenido alcalino, estudiando las modificaciones estructurales que sufre la barrera. En este sentido, la necesidad de un control preciso sobre el material atacado es fundamental para obtener una estructura recessed para aplicaciones a transistores, con densidad de defectos e inhomogeneidad mínimos. La dependencia de la velocidad de ataque de las propiedades de las muestras antes del tratamiento es observada y comentada. Se presentan también investigaciones relacionadas con las propiedades básicas del InN. Gracias al uso de una puerta a través de un electrolito, el desplazamiento de los picos obtenidos por espectroscopia Raman es correlacionado con una variación de la densidad de electrones superficiales. En lo que concierne la aplicación a dispositivos, debido al estado de la tecnología actual y a la calidad del material InN, todavía no apto para dispositivos, la tesis se enfoca a la aplicación de heteroestructuras de InAl(Ga)N/GaN. Gracias a las ventajas de una barrera muy fina, comparada con la tecnología de AlGaN/GaN, el uso de esta estructura es adecuado para aplicaciones que requieren una elevada sensibilidad, estando el canal 2DEG más cerca de la superficie. De hecho, la sensibilidad obtenida en sensores de pH es comparable al estado del arte en términos de variaciones de potencial superficial, y, debido al poco espesor de la barrera, la variación de la corriente con el pH puede ser medida sin necesidad de un electrodo de referencia externo. Además, estructuras fotoconductivas basadas en un gas bidimensional presentan alta ganancia debida al elevado campo eléctrico en la intercara, que induce una elevada fuerza de separación entre hueco y electrón generados por absorción de luz. El uso de metalizaciones de tipo Schottky (fotodiodos Schottky y metal-semiconductormetal) reduce la corriente de oscuridad, en comparación con los fotoconductores. Además, la barrera delgada aumenta la eficiencia de extracción de los portadores. En consecuencia, se obtiene ganancia en todos los dispositivos analizados basados en heteroestructuras de InAl(Ga)N/GaN. Aunque presentando fotoconductividad persistente (PPC), los dispositivos resultan más rápidos con respeto a los valores que se dan en la literatura acerca de PPC en sistemas fotoconductivos. ABSTRACT The main objective of the present work is to study and exploit the two-dimensionalelectron- gas (2DEG) structures based on In-related nitride compounds. Many open questions are analyzed. In particular, technology and material-related topics are the focus of interest regarding both InNmaterial and InAl(Ga)N/GaNheterostructures (HSs) as well as their application to advanced devices. After the analysis of the dependence of InN properties on processing treatments (plasma-based and thermal), the problemof electrical blocking behaviour is taken into consideration. In particular its difficulty is due to the presence of a surface electron accumulation (SEA) in the form of a 2DEG, due to Fermi level pinning. The use of electrochemical methods, compared to standard microelectronic techniques, helped in the successful realization of this task. In particular, reversible modulation of SEA is accomplished. In heterostructures such as InAl(Ga)N/GaN, the 2DEGis present at the interface between GaN and InAl(Ga)N even without an external bias (normally-on structures). The technology related to the fabrication of normally off (E-mode) high-electron-mobility transistors (HEMTs) is investigated in heterostructures. An alkali-based wet-etching method is analysed, standing out the structural modifications the barrier underwent. The need of a precise control of the etched material is crucial, in this sense, to obtain a recessed structure for HEMT application with the lowest defect density and inhomogeneity. The dependence of the etch rate on the as-grown properties is observed and commented. Fundamental investigation related to InNis presented, related to the physics of this degeneratematerial. With the help of electrolyte gating (EG), the shift in Raman peaks is correlated to a variation in surface eletron density. As far as the application to device is concerned, due to the actual state of the technology and material quality of InN, not suitable for working devices yet, the focus is directed to the applications of InAl(Ga)N/GaN HSs. Due to the advantages of a very thin barrier layer, compared to standard AlGaN/GaN technology, the use of this structure is suitable for high sensitivity applications being the 2DEG channel closer to the surface. In fact, pH sensitivity obtained is comparable to the state-of-the-art in terms of surface potential variations, and, due to the ultrathin barrier, the current variation with pH can be recorded with no need of the external reference electrode. Moreover, 2DEG photoconductive structures present a high photoconductive gain duemostly to the high electric field at the interface,and hence a high separation strength of photogenerated electron and hole. The use of Schottky metallizations (Schottky photodiode and metal-semiconductor-metal) reduce the dark current, compared to photoconduction, and the thin barrier helps to increase the extraction efficiency. Gain is obtained in all the device structures investigated. The devices, even if they present persistent photoconductivity (PPC), resulted faster than the standard PPC related decay values.

Multiphase Parallel Interleaved And Primary-Parallel Secondary-Series Forward Micro-Inverter Comparison.

Using multiphase technique is interesting in PV AC-module application due to light-load efficiency improvement by applying phase shedding, and the possibility of low-profile implementation. This paper presents a comparison, in terms of size and efficiency, of the parallel interleaved and the parallel-series connected multiphase configurations, as a function of the number of phases, for a forward micro-inverter operated in DCM. 8-phase prototypes of both multiphase configurations are built and compared between them and with the single phase forward micro-inverter, validating the presented analysis.

High-efficiency Köhler photovoltaic concentrators with external light confinement

Metal grid lines are a vital element in multijunction solar cells in order to take out from the cell the generated photocurrent. Nevertheless all this implies certain shadowing factor and thus certain reflectivity on cells surface that lowers its light absorption. This reflectivity produces a loss in electrical efficiency and thus a loss in global energy production for CPV systems. We present here an optical design for recovering this portion of reflected light, and thus leading to a system efficiency increase. This new design is based on an external confinement cavity, an optical element able to redirect the light reflected by the cell towards its surface again. It has been possible thanks to the recent invention of the advanced Köhler concentrators by LPI, likely to integrate one of these cavities easily. We have proven the excellent performance of these cavities integrated in this kind of CPV modules offering outstanding results: 33.2% module electrical efficiency @Tcell=25ºC and relative efficiency and Isc gains of over 6%.

Calculation Methodology and Fabrication Procedures for Particle Accelerator Strip-Line Kickers: Application to the CTF3 Combiner Ring Extraction Kicker and TL2 Tail Clippers

A particle accelerator is any device that, using electromagnetic fields, is able to communicate energy to charged particles (typically electrons or ionized atoms), accelerating and/or energizing them up to the required level for its purpose. The applications of particle accelerators are countless, beginning in a common TV CRT, passing through medical X-ray devices, and ending in large ion colliders utilized to find the smallest details of the matter. Among the other engineering applications, the ion implantation devices to obtain better semiconductors and materials of amazing properties are included. Materials supporting irradiation for future nuclear fusion plants are also benefited from particle accelerators. There are many devices in a particle accelerator required for its correct operation. The most important are the particle sources, the guiding, focalizing and correcting magnets, the radiofrequency accelerating cavities, the fast deflection devices, the beam diagnostic mechanisms and the particle detectors. Most of the fast particle deflection devices have been built historically by using copper coils and ferrite cores which could effectuate a relatively fast magnetic deflection, but needed large voltages and currents to counteract the high coil inductance in a response in the microseconds range. Various beam stability considerations and the new range of energies and sizes of present time accelerators and their rings require new devices featuring an improved wakefield behaviour and faster response (in the nanoseconds range). This can only be achieved by an electromagnetic deflection device based on a transmission line. The electromagnetic deflection device (strip-line kicker) produces a transverse displacement on the particle beam travelling close to the speed of light, in order to extract the particles to another experiment or to inject them into a different accelerator. The deflection is carried out by the means of two short, opposite phase pulses. The diversion of the particles is exerted by the integrated Lorentz force of the electromagnetic field travelling along the kicker. This Thesis deals with a detailed calculation, manufacturing and test methodology for strip-line kicker devices. The methodology is then applied to two real cases which are fully designed, built, tested and finally installed in the CTF3 accelerator facility at CERN (Geneva). Analytical and numerical calculations, both in 2D and 3D, are detailed starting from the basic specifications in order to obtain a conceptual design. Time domain and frequency domain calculations are developed in the process using different FDM and FEM codes. The following concepts among others are analyzed: scattering parameters, resonating high order modes, the wakefields, etc. Several contributions are presented in the calculation process dealing specifically with strip-line kicker devices fed by electromagnetic pulses. Materials and components typically used for the fabrication of these devices are analyzed in the manufacturing section. Mechanical supports and connexions of electrodes are also detailed, presenting some interesting contributions on these concepts. The electromagnetic and vacuum tests are then analyzed. These tests are required to ensure that the manufactured devices fulfil the specifications. Finally, and only from the analytical point of view, the strip-line kickers are studied together with a pulsed power supply based on solid state power switches (MOSFETs). The solid state technology applied to pulsed power supplies is introduced and several circuit topologies are modelled and simulated to obtain fast and good flat-top pulses.

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

Ultra-High Efficiency, High-Concentration PV System Based On Spectral Division Between GaInP/GaInAs/Ge And BPC Silicon Cells

A novel HCPV nonimaging concentrator concept with high concentration (>500×) is presented. It uses the combination of a commercial concentration GaInP∕GaInAs∕Ge 3J cell and a concentration Back‐Point‐Contact (BPC) concentration silicon cell for efficient spectral utilization, and external confinement techniques for recovering the 3J cell′s reflection. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free‐form RXI‐type concentrator with a band‐pass filter embedded it, both POE and SOE performing Köhler integration to produce light homogenization. The band‐pass filter sends the IR photons in the 900–1200 nm band to the silicon cell. Computer simulations predict that four‐terminal terminal designs could achieve ∼46% added cell efficiencies using commercial 39% 3J and 26% Si cells. A first proof‐of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ∼ 100× and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J with peak efficiency of 36.9%

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells

III-nitride nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitride nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow with high order on pre-defined sites on a pre-patterned substrate

Strict and non-strict independent and-parallelism in logic programs: Correctness, efficiency, and compile-time conditions.

This paper presents some fundamental properties of independent and-parallelism and extends its applicability by enlarging the class of goals eligible for parallel execution. A simple model of (independent) and-parallel execution is proposed and issues of correctness and efficiency discussed in the light of this model. Two conditions, "strict" and "non-strict" independence, are defined and then proved sufficient to ensure correctness and efñciency of parallel execution: if goals which meet these conditions are executed in parallel the solutions obtained are the same as those produced by standard sequential execution. Also, in absence of failure, the parallel proof procedure does not genérate any additional work (with respect to standard SLD-resolution) while the actual execution time is reduced. Finally, in case of failure of any of the goals no slow down will occur. For strict independence the results are shown to hold independently of whether the parallel goals execute in the same environment or in sepárate environments. In addition, a formal basis is given for the automatic compile-time generation of independent and-parallelism: compile-time conditions to efficiently check goal independence at run-time are proposed and proved sufficient. Also, rules are given for constructing simpler conditions if information regarding the binding context of the goals to be executed in parallel is available to the compiler.

One-watt fiber-based power-by-light system for satellite applications

In this work, a fiber-based optical powering (or power-by-light) system capable of providing more than 1 W is developed. The prototype was used in order to power a shunt regulator for controlling the activation and deactivation of solar panels in satellites. The work involves the manufacture of a light receiver (a GaAs multiple photovoltaic converter (MPC)), a power conditioning block, and a regulator and the implementation and characterization of the whole system. The MPC, with an active area of just 3.1 mm2, was able to supply 1 W at 5 V with an efficiency of 30%. The maximum measured device efficiency was over 40% at an input power (Pin) of 0.5 W. Open circuit voltage over 7 V was measured for Pin over 0.5 W. A system optoelectronic efficiency (including the optical fiber, connectors, and MPC) of 27% was measured at an output power (Pout) of 1 W. At Pout = 0.2 W, the efficiency was as high as 36%. The power conditioning block and the regulator were successfully powered with the system. The maximum supplied power in steady state was 0.2 W, whereas in transient state, it reached 0.44 W. The paper also describes the characterization of the system within the temperature range going from -70 to +100?°C.