Highly conductive p++-AlGaAs/n++-GaInP tunnel junctions for operation up to 15,000 suns in concentrator solar cells

In the last few decades there has been great interest in III-V multijunction solar cells (MJSC) for concentrator applications due to their promise to significantly reduce the cost of electricity. Being formed by series connection of several solar cells with different bandgaps, a key role in a MJSC structure is played by the tunnel junctions (TJ) aimed to implement such series connection. Essentially, tunnel junctions (tunnel diodes or Esaki diodes) are thin, heavily doped p-n junctions where quantum tunneling plays a key role as a conduction mechanism. Such devices were discovered by Nobel laureate Leo Esaki at the end of 1950. The key feature of tunnel junctions for their application in MJSC is that, as long as quantum tunneling is the dominant conduction mechanism, they exhibit a linear I-V dependence until the peak tunneling current (Jp) is reached. This initial ohmic region in the I-V curve is ideal for implementing low-loss interconnections between the subcells with different energy bandgaps that constitute a MJSC.

A level II reliability approach to tunnel support design

A reliability approach to tunnel support design is presented in this paper. The aim of the work is the incorporation of classical Level II techniques to the current design method based on the study of the ground-support interaction diagram.

Components of a Wind Tunnel Balance: Design and Calibration

Components of a Wind Tunnel Balance: Design and Calibration

Measurement of Distributed Antenna Systems at 2.4 GHz in a Realistic Subway Tunnel Environment.

Accurate characterization of the radio channel in tunnels is of great importance for new signaling and train control communications systems. To model this environment, measurements have been taken at 2.4 GHz in a real environment in Madrid subway. The measurements were carried out with four base station transmitters installed in a 2-km tunnel and using a mobile receiver installed on a standard train. First, with an optimum antenna configuration, all the propagation characteristics of a complex subway environment, including near shadowing, path loss,shadow fading, fast fading, level crossing rate (LCR), and average fade duration (AFD), have been measured and computed. Thereafter, comparisons of propagation characteristics in a double-track tunnel (9.8-m width) and a single-track tunnel (4.8-m width) have been made. Finally, all the measurement results have been shown in a complete table for accurate statistical modeling.

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

Extended description of tunnel junctions for distributed modeling of concentrator multi-junction solar cells

One of the key components of highly efficient multi-junction concentrator solar cells is the tunnel junction interconnection. In this paper, an improved 3D distributed model is presented that considers real operation regimes in a tunnel junction. This advanced model is able to accurately simulate the operation of the solar cell at high concentraions at which the photogenerated current surpasses the peak current of the tunnel junctionl Simulations of dual-junction solar cells were carried out with the improved model to illustrate its capabilities and the results have been correlated with experimental data reported in the literature. These simulations show that under certain circumstances, the solar cells short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading toward dark regions, which occurs through the anode/p-barrier of the tunnel junction.

Reliability of tunnel liners

The possibility of application of structural reliability theory to the computation of the safety margins of excavated tunnels is presented. After a brief description of the existing procedures the limitations of the safety coefficients such as they usually defined, the proposed limit states are precised as well as the random variables and the applied methodology. Also presented are simple examples, some of them based in actual cases, and to end, some conclusions are established the most important one being the probability of using the method to solve the inverse problem of identification.

Probabilistic Analysis of Tunnel Liners

The use of probabilistic methods to analyse reliability of structures is being applied to a variety of engineering problems due to the possibility of establishing the failure probability on rational grounds. In this paper we present the application of classical reliability theory to analyse the safety of underground tunnels.

Bit noise from an optical logic gate with laser diodes

Output bits from an optical logic cell present noise due to the type of technique used to obtain the Boolean functions of two input data bits. We have simulated the behavior of an optically programmable logic cell working with Fabry Perot-laser diodes of the same type employed in optical communications (1550nm) but working here as amplifiers. We will report in this paper a study of the bit noise generated from the optical non-linearity process allowing the Boolean function operation of two optical input data signals. Two types of optical logic cells will be analyzed. Firstly, a classical "on-off" behavior, with transmission operation of LD amplifier and, secondly, a more complicated configuration with two LD amplifiers, one working on transmission and the other one in reflection mode. This last configuration has nonlinear behavior emulating SEED-like properties. In both cases, depending on the value of a "1" input data signals to be processed, a different logic function can be obtained. Also a CW signal, known as control signal, may be apply to fix the type of logic function. The signal to noise ratio will be analyzed for different parameters, as wavelength signals and the hysteresis cycles regions associated to the device, in relation with the signals power level applied. With this study we will try to obtain a better understanding of the possible effects present on an optical logic gate with Laser Diodes.

Reliability of tunnel liners

The possibility of application of structural reliability theory to the computation of the safety margins of excavated tunnels is presented. After a brief description of the existing procedures and the limitations of the safety coefficients such as they are usually defined, the proposed limit states are precised as well as the random variables and the applied methodology. Also presented are simple examples, some of them based in actual cases, and to end, some conclusions are established the most important one being the probability of using the method to solve the inverse problem of identification.

Optimisation of a Low-Speed Wind Tunnel. Analysis and Redesign of Corner Vanes.

This paper includes the experimental study, analysis, redesign and subsequent test of the parts of a closed circuit, low speed wind tunnel which are relevant in terms of total pressure loss. The objective is to lower the energy consumption of this system for given conditions in test chamber, so as to reduce the operational costs. In order to achieve this objective, several tasks were performed as the text shows in its different parts. For these tasks, the ETSIAE wind tunnel was used, although the results of this work can be extrapolated to any wind tunnel with the same characteristics. Part II presents a theoretical previous study of the general running of a closed circuit, low speed wind tunnel, as well as the followed procedure to conduct experimental tests for obtaining the total pressure loss in its parts. Results from these tests and their analysis are included in this part. In part III, the analysis of the influence of corner 1 on the pressure loss takes place. As it is said in this part, corner 1 has great importance in the total pressure loss of the wind tunnel. Therefore, it is the first part that should be modified in order to improve the performances of the wind tunnel. During part IV, an optimised guide vane is designed in order to reduce the pressure loss in corner 1 of the wind tunnel. Software MISES is used to achieve this goal by means of selecting the optimum guide vane. In order to introduce the new guide vane in wind tunnels with affordable costs, the easily constructable criterion is kept during design. For this reason, the guide vane will consist of simple aerodynamic contours. Part V includes some possible improvements for the proposed guide vane, in order to evaluate if there is room for improvement in its design. Finally, part VI includes the tests that were conducted in the wind tunnel with the new guide vane cascade and the analysis of their results, in order to asses whether the proposed design fulfills the requirement of lowering the total pressure loss in the wind tunnel. Part VII gathers the main ideas resulting from the whole work.

Wind tunnel study on the influence of different parapets on the roof pressure distribution of low-rise buildings

High suction loads appear on roofs of low-height buildings. The use of parapets with appropriate height at the roof edges alleviates these loads. The performance of six parapet configurations to decrease the suction loads induced on roofs by oblique winds has been studied in a low speed wind tunnel. The studied parapet configurations include vertical wall parapets, either solid or porous, and cantilevered parapets formed by a small horizontal roof close to the building roof. Low-height parapets with a medium porosity and cantilevered parapets are more efficient than solid parapets to reduce the wind suctions generated on the roofs by conical vortices.

Wind tunnel analysis on the influence of cantilever parapets on the wind loads on curved roofs

Different methods to reduce the high suction caused by conical vortices have been reported in the literature: vertical parapets, either solids or porous, placed at the roof edges being the most analysed configuration. Another method for alleviating the high suction peaks due to conical vortices is to round the roof edges. Very recently, the use of some non-standard parapet configurations, like cantilever parapets, has been suggested. In this paper, its efficiency to reduce suction loads on curved roofs is experimentally checked by testing the pressure distribution on the curved roof of a low-rise building model in a wind tunnel. Very high suction loads have been measured on this model, the magnitude of these high suction loads being significantly decreased when cantilever...

Reproducing the Bolund experiment in wind tunnel

The Bolund experiment has been reproduced in a neutral boundary layer wind tunnel (WT) at scale 1:115 for two Reynolds numbers. All the results have been obtained for an incoming flow from the 270o wind direction (transect B in the Bolund experiment jargon). Vertical scans of the velocity field are obtained using non-time resolved two components particle image velocimetry. Time-resolved velocity time series with a three component hot-wire probe have been also measured for transects at 2 and 5 m height and in the vertical transects at met masts M6, M3 and M8 locations. Special attention has been devoted to the detailed characterization of the inflow in order to reduce uncertainties in future comparisons with other physical and numerical simulations. Emphasis is placed on the analysis of spectral functions of the undisturbed flow and those of the flow above the island. The result?s reproducibility and trustworthiness have been addressed through redundancy measurements using particle image velocimetry, two and three components hot-wire anemometry. The bias in the prediction of the mean speed is similar to the one reported during the Bolund experiment by the physical modellers. However, certain reduction of the bias in the estimation of the turbulent kinetic energy is achieved. TheWT results of spectra and cosprectra have revealed a behaviour similar to the full-scale measurements in some relevant locations, showing that WT modelling can contribute to provide valid information about these important structural loading factors.

Fotodiodos basados en (Zn,Mg)O para la detección de luz ultravioleta

La presente tesis fue ideada con el objetivo principal de fabricar y caracterizar fotodiodos Schottky en capas de ZnMgO y en estructuras de pozo cuántico ZnMgO/ZnO para la detección de luz UV. La elección de este material semiconductor vino motivada por la posibilidad que ofrece de detectar y procesar señales simultáneamente, en un amplio margen de longitudes de onda, al igual que su más directo competidor el GaN. En esta memoria se da en primer lugar una visión general de las propiedades estructurales y ópticas del ZnO, prestando especial atención a su ternario ZnMgO y a las estructuras de pozo cuántico ZnMgO/ZnO. Además, se han desarrollado los conocimientos teóricos necesarios para una mejor compresión y discusión de los resultados alcanzados. En lo que respecta a los resultados de esta memoria, en esencia, estos se dividen en dos bloques. Fotodiodos desarrollados sobre capas delgadas de ZnMgO no-polar, y sobre estructuras de pozo cuántico de ZnMgO/ZnO no-polares y semipolares Fotodiodos de capas delgadas de ZnMgO. Es bien conocido que la adición de Mg a la estructura cristalina del ZnO desplaza el borde de absorción hacia energías mayores en el UV. Se ha aprovechado esto para fabricar fotodiodos Schottky sobre capas de ZnMgO crecidas por MOCVD y MBE, los cuales detecten en un ventana de energías comprendida entre 3.3 a 4.6 eV. Sobre las capas de ZnMgO, con diferentes contenidos de Mg(5.6-18.0 %), crecidas por MOCVD se han fabricado fotodiodos Schottky. Se han estudiado en detalle las curvas corrientevoltaje (I-V). Seguidamente, se ha realizado un análisis de la respuesta espectral bajo polarización inversa. Tanto los valores de responsividad obtenidos como el contraste UV/VIS están claramente aumentados por la presencia de ganancia. Paralelamente, se han realizado medidas de espectroscopia de niveles profundos (DLOS), identificándose la presencia de dos niveles profundos de carácter aceptor. El papel desempeñado por estos en la ganancia ha sido analizado meticulosamente. Se ha demostrado que cuando estos son fotoionizados son responsables directos del gran aumento de la corriente túnel que se produce a través de la barrera Schottky, dando lugar a la presencia de la ganancia observada, que además resulta ser función del flujo de fotones incidente. Para extender el rango detección hasta 4.6 eV se fabricaron fotodiodos sobre capas de ZnMgO de altísima calidad cristalina crecidas por MBE. Sobre estos se ha realizado un riguroso análisis de las curvas I-V y de las curvas capacidad-voltaje (CV), para posteriormente identificar los niveles profundos presentes en el material, mediante la técnica de DLOS. Así mismo se ha medido la respuesta espectral de los fotodetectores, la cual muestra un corte abrupto y un altísimo contraste UV/VIS. Además, se ha demostrado como estos son perfectos candidatos para la detección de luz en la región ciega al Sol. Por otra parte, se han fabricado fotodiodos MSM sobre estas mismas capas. Se han estudiado las principales figuras de mérito de estos, observándose unas corrientes bajas de oscuridad, un contraste UV/VIS de 103, y la presencia de fotocorriente persistente. Fotodiodos Schottky de pozos cuánticos de ZnO/ZnMgO. En el segundo bloque de esta memoria, con el objeto final de clarificar el impacto que tiene el tratamiento del H2O2 sobre las características optoelectrónicas de los dispositivos, se ha realizado un estudio detallado, en el que se han analizado por separado fotodiodos tratados y no tratados con H2O2, fabricados sobre pozos cuánticos de ZnMgO/ZnO. Se ha estudiado la respuesta espectral en ambos casos, observándose la presencia de ganancia en los dos. A través de un análisis meticuloso de las características electrónicas y optoeletrónicas de los fotodiodos, se han identificado dos mecanismos de ganancia internos diferentes en función de que la muestra sea tratada o no-tratada. Se han estudiado fotodetectores sensibles a la polarización de la luz (PSPDs) usando estructuras de pozo cuántico no-polares y semipolares sobre sustratos de zafiro y sustratos de ZnO. En lo que respecta a los PSPDs sobre zafiro, en los cuales el pozo presenta una tensión acumulada en el plano, se ha visto que el borde de absorción se desplaza _E _21 meV con respecto a luz linealmente polarizada perpendicular y paralela al eje-c, midiéndose un contraste (RE || c /RE c)max _ 6. Con respecto a los PSPDs crecidos sobre ZnO, los cuales tienen el pozo relajado, se ha obtenido un 4E _30-40, y 21 meV para las heteroestructuras no-polar y semipolar, respectivamente. Además el máximo contraste de responsividad fue de (RE || c /RE c)max _ 6 . Esta sensibilidad a la polarización de la luz ha sido explicada en términos de las transiciones excitónicas entre la banda de conducción y las tres bandas de valencia. ABSTRACT The main goal of the present thesis is the fabrication and characterization of Schottky photodiodes based on ZnMgO layers and ZnMgO / ZnO quantum wells (QWs) for the UV detection. The decision of choosing this semiconductor was mainly motivated by the possibility it offers of detecting and processing signals simultaneously in a wide range of wavelengths like its main competitor GaN. A general overview about the structural and optical properties of ZnO, ZnMgO layers and ZnMgO/ZnO QWs is given in the first part of this thesis. Besides, it is shown the necessary theoretical knowledge for a better understanding of the discussion presented here. The results of this thesis may be divided in two parts. On the one hand, the first part is based on studying non-polar ZnMgO photodiodes. On the other hand, the second part is focused on the characterization of non-polar and semipolar ZnMgO / ZnO QWs Schottky photodiodes. ZnMgO photodiodes. It is well known that the addition of Mg in the crystal structure of ZnO results in a strong blue-shift of the ZnO band-gap. Taking into account this fact Schottky photodiodes were fabricated on ZnMgO layers grown by MOCVD and MBE. Concerning ZnMgO layers grown by MOCVD, a series of Schottky photodiodes were fabricated, by varying the Mg content from 5.6% to 18 %. Firstly, it has been studied in detail the current-voltage curves. Subsequently, spectral response was analyzed at reverse bias voltage. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism. Simultaneously, measurements of deep level optical spectroscopy were carried out, identifying the presence of two acceptor-like deep levels. The role played for these in the gain observed was studied in detail. It has been demonstrated that when these are photoionized cause a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux. In order to extend the detection range up to 4.6 eV, photodiodes ZnMgO grown by MBE were fabricated. An exhaustive analysis of the both I-V and CV characteristics was performed. Once again, deep levels were identified by using the technique DLOS. Furthermore, the spectral response was measured, observing sharp absorption edges and high UV/VIS rejections ratio. The results obtained have confirmed these photodiodes are excellent candidates for the light detection in the solar-blind region. In addition, MSM photodiodes have also been fabricated on the same layers. The main figures of merit have been studied, showing low dark currents, a large UV/VIS rejection ratio and persistent photocurrent. ZnMgO/ZnO QWs photodiodes. The second part was focused on ZnMgO/ ZnO QWs. In order to clarify the impact of the H2O2 treatment on the performance of the Schottky diodes, a comparative study using treated and untreated ZnMgO/ZnO photodiodes has been carried out. The spectral response in both cases has shown the presence of gain, under reverse bias. Finally, by means of the analysis of electronic and optoelectronic characteristics, two different internal gain mechanisms have been indentified in treated and non-treated material. Light polarization-sensitive UV photodetectors (PSPDs) using non-polar and semipolar ZnMgO/ZnO multiple quantum wells grown both on sapphire and ZnO substrates have been demonstrated. For the PSPDs grown on sapphire with anisotropic biaxial in-plain strain, the responsivity absorption edge shifts by _E _21 meV between light polarized perpendicular and parallel to the c-axis, and the maximum responsivity contrast is (RE || c /RE c)max _ 6 . For the PSPDs grown on ZnO, with strain-free quantum wells, 4E _30-40, and 21 meV for non-polar and semipolar heterostructures, and maximum (R /R||)max _10. for non-polar heterostructure was achieved. These light polarization sensitivities have been explained in terms of the excitonic transitions between the conduction and the three valence bands.