Study of the Mechanical Strength Improvement of Wafers for EWT Solar Cells by Chemical Etching after the Drilling Process

Mechanical stability of EWT solar cells deteriorates when holes are created in the wafer. Nevertheless, the chemical etching after the hole generation process improves the mechanical strength by removing part of the damage produced in the drilling process. Several sets of wafers with alkaline baths of different duration have been prepared. The mechanical strength has been measured by the ring on ring bending test and the failure stresses have been obtained through a FE simulation of the test. This paper shows the comparison of these groups of wafers in order to obtain an optimum value of the decreased thickness produced by the chemical etching

Damage reduction of the laser drilling process on back contact solar cells by chemical treatment

Production of back contact solar cells requires holes generations on the wafers to keep both positive and negative contacts on the back side of the cell. This drilling process weakens the wafer mechanically due to the presence of the holes and the damage introduced during the process as microcracks. In this study, several chemical processes have been applied to drilled wafers in order to eliminate or reduce the damage generated during this fabrication step. The treatments analyzed are the followings: alkaline etching during 1, 3 and 5 minutes, acid etching for 2 and 4 minutes and texturisation. To determine mechanical strength of the samples a common mechanical study has been carried out testing the samples by the Ring on Ring bending test and obtaining the stress state in the moment of failure by FE simulation. Finally the results obtained for each treatment were fitted to a three parameter Weibull distribution

Fracture strength of drilled wafers: study of the stress concentration factor and determination of the weibull distribution of the fracture stress

In the photovoltaic field, the back contact solar cells technology has appeared as an alternative to the traditional silicon modules. This new type of cells places both positive and negative contacts on the back side of the cells maximizing the exposed surface to the light and making easier the interconnection of the cells in the module. The Emitter Wrap-Through solar cell structure presents thousands of tiny holes to wrap the emitter from the front surface to the rear surface. These holes are made in a first step over the silicon wafers by means of a laser drilling process. This step is quite harmful from a mechanical point of view since holes act as stress concentrators leading to a reduction in the strength of these wafers. This paper presents the results of the strength characterization of drilled wafers. The study is carried out testing the samples with the ring on ring device. Finite Element models are developed to simulate the tests. The stress concentration factor of the drilled wafers under this load conditions is determined from the FE analysis. Moreover, the material strength is characterized fitting the fracture stress of the samples to a three-parameter Weibull cumulative distribution function. The parameters obtained are compared with the ones obtained in the analysis of a set of samples without holes to validate the method employed for the study of the strength of silicon drilled wafers.

Study of the effect of different hole sizes on mechanical strength of wafers for back contact solar cells

Drilling process on wafers to produce EWT or MWT solar cells is a critical fabrication step, which affects on their mechanical stability. The amount of damage introduced during drilling process depends on the density of holes, their size and the chemical process applied afterwards. To quantify the relation between size of the holes and reduction of mechanical strength, several sets of wafers have been prepared, with different hole diameter. The mechanical strength of these sets has been measured by the ring on ring bending test, and the stress state in the moment of failure has been deduced by FE simulation.

Estudio de las propiedades mecánicas de obleas de silicio

En esta tesis se propone un procedimiento para evaluar la resistencia mecánica de obleas de silicio cristalino y se aplica en diferentes casos válidos para la industria. En el sector de la industria fotovoltaica predomina la tecnología basada en paneles de silicio cristalino. Estos paneles están compuestos por células solares conectadas en serie y estas células se forman a partir de obleas de silicio. Con el objetivo de disminuir el coste del panel, en los últimos años se ha observado una clara tendencia a la reducción del espesor de las obleas. Esta reducción del espesor modifica la rigidez de las obleas por lo que ha sido necesario modificar la manera tradicional de manipularlas con el objetivo de mantener un bajo ratio de rotura. Para ello, es necesario conocer la resistencia mecánica de las obleas. En la primera parte del trabajo se describen las obleas de silicio, desde su proceso de formación hasta sus propiedades mecánicas. Se muestra la influencia de la estructura cristalográfica en la resistencia y en el comportamiento ya que el cristal de silicio es anisótropo. Se propone también el método de caracterización de la resistencia. Se utiliza un criterio probabilista basado en los métodos de dimensionamiento de materiales frágiles en el que la resistencia queda determinada por los parámetros de la ley de Weibull triparamétrica. Se propone el procedimiento para obtener estos parámetros a partir de campañas de ensayos, modelización numérica por elementos finitos y un algoritmo iterativo de ajuste de los resultados. En la segunda parte de la tesis se describen los diferentes tipos de ensayos que se suelen llevar a cabo con este material. Se muestra además, para cada uno de los ensayos descritos, un estudio comparativo de diferentes modelos de elementos finitos simulando los ensayos. Se comparan tanto los resultados aportados por cada modelo como los tiempos de cálculo. Por último, se presentan tres aplicaciones diferentes donde se ha aplicado este procedimiento de estudio. La primera aplicación consiste en la comparación de la resistencia mecánica de obleas de silicio en función del método de crecimiento del lingote. La resistencia de las tradicionales obleas monocristalinas obtenidas por el método Czochralski y obleas multicristalinas es comparada con las novedosas obleas quasi-monocristalinas obtenidas por métodos de fundición. En la segunda aplicación se evalúa la profundidad de las grietas generadas en el proceso de corte del lingote en obleas. Este estudio se realiza de manera indirecta: caracterizando la resistencia de grupos de obleas sometidas a baños químicos de diferente duración. El baño químico reduce el espesor de las obleas eliminando las capas más dañadas. La resistencia de cada grupo es analizada y la comparación permite obtener la profundidad de las grietas generadas en el proceso de corte. Por último, se aplica este procedimiento a un grupo de obleas con características muy especiales: obleas preparadas para formar células de contacto posterior EWT. Estas obleas presentan miles de agujeros que las debilitan considerablemente. Se aplica el procedimiento de estudio propuesto con un grupo de estas obleas y se compara la resistencia obtenida con un grupo de referencia. Además, se propone un método simplificado de estudio basado en la aplicación de una superficie de intensificación de tensiones. ABSTRACT In this thesis, a procedure to evaluate the mechanical strength of crystalline silicon wafers is proposed and applied in different studies. The photovoltaic industry is mainly based on crystalline silicon modules. These modules are composed of solar cells which are based on silicon wafers. Regarding the cost reduction of solar modules, a clear tendency to use thinner wafers has been observed during last years. Since the stiffness varies with thickness, the manipulation techniques need to be modified in order to guarantee a low breakage rate. To this end, the mechanical strength has to be characterized correctly. In the first part of the thesis, silicon wafers are described including the different ways to produce them and the mechanical properties of interest. The influence of the crystallographic structure in the strength and the behaviour (the anisotropy of the silicon crystal) is shown. In addition, a method to characterize the mechanical strength is proposed. This probabilistic procedure is based on methods to characterize brittle materials. The strength is characterized by the values of the three parameters of the Weibull cumulative distribution function (cdf). The proposed method requires carrying out several tests, to simulate them through Finite Element models and an iterative algorithm in order to estimate the parameters of the Weibull cdf. In the second part of the thesis, the different types of test that are usually employed with these samples are described. Moreover, different Finite Element models for the simulation of each test are compared regarding the information supplied by each model and the calculation times. Finally, the method of characterization is applied to three examples of practical applications. The first application consists in the comparison of the mechanical strength of silicon wafers depending on the ingot growth method. The conventional monocrystalline wafers based on the Czochralski method and the multicrystalline ones are compared with the new quasi-monocrystalline substrates. The second application is related to the estimation of the crack length caused by the drilling process. An indirect way is used to this end: several sets of silicon wafers are subjected to chemical etchings of different duration. The etching procedure reduces the thickness of the wafers removing the most damaged layers. The strength of each set is obtained by means of the proposed method and the comparison permits to estimate the crack length. At last, the procedure is applied to determine the strength of wafers used for the design of back-contact cells of type ETW. These samples are drilled in a first step resulting in silicon wafers with thousands of tiny holes. The strength of the drilled wafers is obtained and compared with the one of a standard set without holes. Moreover, a simplified approach based on a stress intensification surface is proposed.

Tool wear monitoring using neuro-fuzzy techniques: a comparative study in a turning process

Tool wear detection is a key issue for tool condition monitoring. The maximization of useful tool life is frequently related with the optimization of machining processes. This paper presents two model-based approaches for tool wear monitoring on the basis of neuro-fuzzy techniques. The use of a neuro-fuzzy hybridization to design a tool wear monitoring system is aiming at exploiting the synergy of neural networks and fuzzy logic, by combining human reasoning with learning and connectionist structure. The turning process that is a well-known machining process is selected for this case study. A four-input (i.e., time, cutting forces, vibrations and acoustic emissions signals) single-output (tool wear rate) model is designed and implemented on the basis of three neuro-fuzzy approaches (inductive, transductive and evolving neuro-fuzzy systems). The tool wear model is then used for monitoring the turning process. The comparative study demonstrates that the transductive neuro-fuzzy model provides better error-based performance indices for detecting tool wear than the inductive neuro-fuzzy model and than the evolving neuro-fuzzy model.

Competence Monitoring in Project Teams by using Web based portfolio management systems

This paper reports a learning experience related to the acquisition of project management competences. Students from three different universities and backgrounds, cooperate in a common project that drives the learning-teaching process. Previous related works on this initiative have already evaluated the goodness of this multidisciplinary, project-based learning approach in the context of a new educative paradigm. Yet the innovative experience has allowed the authors to define a rubric in order to measure specific competences in project management. The study shows the rubric’s main aspects as well as competence acquisition evaluation alternatives, based in the metrics defined. Key indicators and specific reports obtained from data base fields in the web tool will support this work. As a result, new competences can be assessed, such ones like teamwork, problem solving, communication and leadership. Final goal is to provide an overall competence map to the students at the same time they improve their skills.

A portable NIR device for the optical supervision of milk coagulation process

The coagulation of milk is the fundamental process in cheese-making, based on a gel formation as consequence of physicochemical changes taking place in the casein micelles, the monitoring the whole process of milk curd formation is a constant preoccupation for dairy researchers and cheese companies (Lagaude et al., 2004). In addition to advances in composition-based applications of near infrared spectroscopy (NIRS), innovative uses of this technology are pursuing dynamic applications that show promise, especially in regard to tracking a sample in situ during food processing (Bock and Connelly, 2008). In this way the literature describes cheese making process applications of NIRS for curd cutting time determination, which conclude that NIRS would be a suitable method of monitoring milk coagulation, as shown i.e. the works published by Fagan et al. (Fagan et al., 2008; Fagan et al., 2007), based in the use of the commercial CoAguLite probe (with a LED at 880nm and a photodetector for light reflectance detection).

On-Chip Thermal Monitoring: Design, Placement and Interconnection of Temperature Sensors

La temperatura es una preocupación que juega un papel protagonista en el diseño de circuitos integrados modernos. El importante aumento de las densidades de potencia que conllevan las últimas generaciones tecnológicas ha producido la aparición de gradientes térmicos y puntos calientes durante el funcionamiento normal de los chips. La temperatura tiene un impacto negativo en varios parámetros del circuito integrado como el retardo de las puertas, los gastos de disipación de calor, la fiabilidad, el consumo de energía, etc. Con el fin de luchar contra estos efectos nocivos, la técnicas de gestión dinámica de la temperatura (DTM) adaptan el comportamiento del chip en función en la información que proporciona un sistema de monitorización que mide en tiempo de ejecución la información térmica de la superficie del dado. El campo de la monitorización de la temperatura en el chip ha llamado la atención de la comunidad científica en los últimos años y es el objeto de estudio de esta tesis. Esta tesis aborda la temática de control de la temperatura en el chip desde diferentes perspectivas y niveles, ofreciendo soluciones a algunos de los temas más importantes. Los niveles físico y circuital se cubren con el diseño y la caracterización de dos nuevos sensores de temperatura especialmente diseñados para los propósitos de las técnicas DTM. El primer sensor está basado en un mecanismo que obtiene un pulso de anchura variable dependiente de la relación de las corrientes de fuga con la temperatura. De manera resumida, se carga un nodo del circuito y posteriormente se deja flotando de tal manera que se descarga a través de las corrientes de fugas de un transistor; el tiempo de descarga del nodo es la anchura del pulso. Dado que la anchura del pulso muestra una dependencia exponencial con la temperatura, la conversión a una palabra digital se realiza por medio de un contador logarítmico que realiza tanto la conversión tiempo a digital como la linealización de la salida. La estructura resultante de esta combinación de elementos se implementa en una tecnología de 0,35 _m. El sensor ocupa un área muy reducida, 10.250 nm2, y consume muy poca energía, 1.05-65.5nW a 5 muestras/s, estas cifras superaron todos los trabajos previos en el momento en que se publicó por primera vez y en el momento de la publicación de esta tesis, superan a todas las implementaciones anteriores fabricadas en el mismo nodo tecnológico. En cuanto a la precisión, el sensor ofrece una buena linealidad, incluso sin calibrar; se obtiene un error 3_ de 1,97oC, adecuado para tratar con las aplicaciones de DTM. Como se ha explicado, el sensor es completamente compatible con los procesos de fabricación CMOS, este hecho, junto con sus valores reducidos de área y consumo, lo hacen especialmente adecuado para la integración en un sistema de monitorización de DTM con un conjunto de monitores empotrados distribuidos a través del chip. Las crecientes incertidumbres de proceso asociadas a los últimos nodos tecnológicos comprometen las características de linealidad de nuestra primera propuesta de sensor. Con el objetivo de superar estos problemas, proponemos una nueva técnica para obtener la temperatura. La nueva técnica también está basada en las dependencias térmicas de las corrientes de fuga que se utilizan para descargar un nodo flotante. La novedad es que ahora la medida viene dada por el cociente de dos medidas diferentes, en una de las cuales se altera una característica del transistor de descarga |la tensión de puerta. Este cociente resulta ser muy robusto frente a variaciones de proceso y, además, la linealidad obtenida cumple ampliamente los requisitos impuestos por las políticas DTM |error 3_ de 1,17oC considerando variaciones del proceso y calibrando en dos puntos. La implementación de la parte sensora de esta nueva técnica implica varias consideraciones de diseño, tales como la generación de una referencia de tensión independiente de variaciones de proceso, que se analizan en profundidad en la tesis. Para la conversión tiempo-a-digital, se emplea la misma estructura de digitalización que en el primer sensor. Para la implementación física de la parte de digitalización, se ha construido una biblioteca de células estándar completamente nueva orientada a la reducción de área y consumo. El sensor resultante de la unión de todos los bloques se caracteriza por una energía por muestra ultra baja (48-640 pJ) y un área diminuta de 0,0016 mm2, esta cifra mejora todos los trabajos previos. Para probar esta afirmación, se realiza una comparación exhaustiva con más de 40 propuestas de sensores en la literatura científica. Subiendo el nivel de abstracción al sistema, la tercera contribución se centra en el modelado de un sistema de monitorización que consiste de un conjunto de sensores distribuidos por la superficie del chip. Todos los trabajos anteriores de la literatura tienen como objetivo maximizar la precisión del sistema con el mínimo número de monitores. Como novedad, en nuestra propuesta se introducen nuevos parámetros de calidad aparte del número de sensores, también se considera el consumo de energía, la frecuencia de muestreo, los costes de interconexión y la posibilidad de elegir diferentes tipos de monitores. El modelo se introduce en un algoritmo de recocido simulado que recibe la información térmica de un sistema, sus propiedades físicas, limitaciones de área, potencia e interconexión y una colección de tipos de monitor; el algoritmo proporciona el tipo seleccionado de monitor, el número de monitores, su posición y la velocidad de muestreo _optima. Para probar la validez del algoritmo, se presentan varios casos de estudio para el procesador Alpha 21364 considerando distintas restricciones. En comparación con otros trabajos previos en la literatura, el modelo que aquí se presenta es el más completo. Finalmente, la última contribución se dirige al nivel de red, partiendo de un conjunto de monitores de temperatura de posiciones conocidas, nos concentramos en resolver el problema de la conexión de los sensores de una forma eficiente en área y consumo. Nuestra primera propuesta en este campo es la introducción de un nuevo nivel en la jerarquía de interconexión, el nivel de trillado (o threshing en inglés), entre los monitores y los buses tradicionales de periféricos. En este nuevo nivel se aplica selectividad de datos para reducir la cantidad de información que se envía al controlador central. La idea detrás de este nuevo nivel es que en este tipo de redes la mayoría de los datos es inútil, porque desde el punto de vista del controlador sólo una pequeña cantidad de datos |normalmente sólo los valores extremos| es de interés. Para cubrir el nuevo nivel, proponemos una red de monitorización mono-conexión que se basa en un esquema de señalización en el dominio de tiempo. Este esquema reduce significativamente tanto la actividad de conmutación sobre la conexión como el consumo de energía de la red. Otra ventaja de este esquema es que los datos de los monitores llegan directamente ordenados al controlador. Si este tipo de señalización se aplica a sensores que realizan conversión tiempo-a-digital, se puede obtener compartición de recursos de digitalización tanto en tiempo como en espacio, lo que supone un importante ahorro de área y consumo. Finalmente, se presentan dos prototipos de sistemas de monitorización completos que de manera significativa superan la características de trabajos anteriores en términos de área y, especialmente, consumo de energía. Abstract Temperature is a first class design concern in modern integrated circuits. The important increase in power densities associated to recent technology evolutions has lead to the apparition of thermal gradients and hot spots during run time operation. Temperature impacts several circuit parameters such as speed, cooling budgets, reliability, power consumption, etc. In order to fight against these negative effects, dynamic thermal management (DTM) techniques adapt the behavior of the chip relying on the information of a monitoring system that provides run-time thermal information of the die surface. The field of on-chip temperature monitoring has drawn the attention of the scientific community in the recent years and is the object of study of this thesis. This thesis approaches the matter of on-chip temperature monitoring from different perspectives and levels, providing solutions to some of the most important issues. The physical and circuital levels are covered with the design and characterization of two novel temperature sensors specially tailored for DTM purposes. The first sensor is based upon a mechanism that obtains a pulse with a varying width based on the variations of the leakage currents on the temperature. In a nutshell, a circuit node is charged and subsequently left floating so that it discharges away through the subthreshold currents of a transistor; the time the node takes to discharge is the width of the pulse. Since the width of the pulse displays an exponential dependence on the temperature, the conversion into a digital word is realized by means of a logarithmic counter that performs both the timeto- digital conversion and the linearization of the output. The structure resulting from this combination of elements is implemented in a 0.35_m technology and is characterized by very reduced area, 10250 nm2, and power consumption, 1.05-65.5 nW at 5 samples/s, these figures outperformed all previous works by the time it was first published and still, by the time of the publication of this thesis, they outnumber all previous implementations in the same technology node. Concerning the accuracy, the sensor exhibits good linearity, even without calibration it displays a 3_ error of 1.97oC, appropriate to deal with DTM applications. As explained, the sensor is completely compatible with standard CMOS processes, this fact, along with its tiny area and power overhead, makes it specially suitable for the integration in a DTM monitoring system with a collection of on-chip monitors distributed across the chip. The exacerbated process fluctuations carried along with recent technology nodes jeop-ardize the linearity characteristics of the first sensor. In order to overcome these problems, a new temperature inferring technique is proposed. In this case, we also rely on the thermal dependencies of leakage currents that are used to discharge a floating node, but now, the result comes from the ratio of two different measures, in one of which we alter a characteristic of the discharging transistor |the gate voltage. This ratio proves to be very robust against process variations and displays a more than suficient linearity on the temperature |1.17oC 3_ error considering process variations and performing two-point calibration. The implementation of the sensing part based on this new technique implies several issues, such as the generation of process variations independent voltage reference, that are analyzed in depth in the thesis. In order to perform the time-to-digital conversion, we employ the same digitization structure the former sensor used. A completely new standard cell library targeting low area and power overhead is built from scratch to implement the digitization part. Putting all the pieces together, we achieve a complete sensor system that is characterized by ultra low energy per conversion of 48-640pJ and area of 0.0016mm2, this figure outperforms all previous works. To prove this statement, we perform a thorough comparison with over 40 works from the scientific literature. Moving up to the system level, the third contribution is centered on the modeling of a monitoring system consisting of set of thermal sensors distributed across the chip. All previous works from the literature target maximizing the accuracy of the system with the minimum number of monitors. In contrast, we introduce new metrics of quality apart form just the number of sensors; we consider the power consumption, the sampling frequency, the possibility to consider different types of monitors and the interconnection costs. The model is introduced in a simulated annealing algorithm that receives the thermal information of a system, its physical properties, area, power and interconnection constraints and a collection of monitor types; the algorithm yields the selected type of monitor, the number of monitors, their position and the optimum sampling rate. We test the algorithm with the Alpha 21364 processor under several constraint configurations to prove its validity. When compared to other previous works in the literature, the modeling presented here is the most complete. Finally, the last contribution targets the networking level, given an allocated set of temperature monitors, we focused on solving the problem of connecting them in an efficient way from the area and power perspectives. Our first proposal in this area is the introduction of a new interconnection hierarchy level, the threshing level, in between the monitors and the traditional peripheral buses that applies data selectivity to reduce the amount of information that is sent to the central controller. The idea behind this new level is that in this kind of networks most data are useless because from the controller viewpoint just a small amount of data |normally extreme values| is of interest. To cover the new interconnection level, we propose a single-wire monitoring network based on a time-domain signaling scheme that significantly reduces both the switching activity over the wire and the power consumption of the network. This scheme codes the information in the time domain and allows a straightforward obtention of an ordered list of values from the maximum to the minimum. If the scheme is applied to monitors that employ TDC, digitization resource sharing is achieved, producing an important saving in area and power consumption. Two prototypes of complete monitoring systems are presented, they significantly overcome previous works in terms of area and, specially, power consumption.

Monitoring spinach shelf-life with hyperspectral image through

Different procedures for monitoring the evolution of leafy vegetables, under plastic covers during cold storage, have been studied. Fifteen spinach leaves were put inside Petri dishes covered with three different plastic films and stored at 4 °C for 21 days. Hyperspectral images were taken during this storage. A radiometric correction is proposed in order to avoid the variation in transmittance of the plastic films during time in the hyperspectral images. Afterwards, three spectral pre-processing procedures (no pre-process, Savitsky–Golay and Standard Normal Variate, combined with Principal Component Analysis) were applied to obtain different models. The corresponding artificial images of scores were studied by means of Analysis of Variance to compare their ability to sense the aging of the leaves. All models were able to monitor the aging through storage. Radiometric correction seemed to work properly and could allow the supervision of shelf-life in leafy vegetables through commercial transparent films.

Design of a solar incubator. Part 1: Monitoring temperature and enthalpy gradients under commercial production

The real increase in energy prices and the intention of reducing pollutant emissions in developed countries makes interesting to use solar energy in all the processes where its application is possible. As it is demonstrated in countries sited at latitudes with optimal conditions of solar radiation and temperature, it is possible to use solar energy as heat source for small-scale hatchery [1,2], but beyond, making a design for proper installation; it is possible to use solar energy as main or support energy source in medium and large size incubators . Monitoring of a normal actual process using temperature and relative humidity sensors is necessary to know the actual operating conditions that the solar heating system must be designed and sized for. Moreover, the identification and analysis of temperature and enthalpy gradients inside the incubator is of major importance.

Hybrid incremental modeling based on least squares and fuzzy K-NN for monitoring tool wear in turning processes

There is now an emerging need for an efficient modeling strategy to develop a new generation of monitoring systems. One method of approaching the modeling of complex processes is to obtain a global model. It should be able to capture the basic or general behavior of the system, by means of a linear or quadratic regression, and then superimpose a local model on it that can capture the localized nonlinearities of the system. In this paper, a novel method based on a hybrid incremental modeling approach is designed and applied for tool wear detection in turning processes. It involves a two-step iterative process that combines a global model with a local model to take advantage of their underlying, complementary capacities. Thus, the first step constructs a global model using a least squares regression. A local model using the fuzzy k-nearest-neighbors smoothing algorithm is obtained in the second step. A comparative study then demonstrates that the hybrid incremental model provides better error-based performance indices for detecting tool wear than a transductive neurofuzzy model and an inductive neurofuzzy model.

Systematic Approach for the selection of monitoring technologies in CO2 geological storage projects. Application of multicriteria decision making

Geologic storage of carbon dioxide (CO2) has been proposed as a viable means for reducing anthropogenic CO2 emissions. Once injection begins, a program for measurement, monitoring, and verification (MMV) of CO2 distribution is required in order to: a) research key features, effects and processes needed for risk assessment; b) manage the injection process; c) delineate and identify leakage risk and surface escape; d) provide early warnings of failure near the reservoir; and f) verify storage for accounting and crediting. The selection of the methodology of monitoring (characterization of site and control and verification in the post-injection phase) is influenced by economic and technological variables. Multiple Criteria Decision Making (MCDM) refers to a methodology developed for making decisions in the presence of multiple criteria. MCDM as a discipline has only a relatively short history of 40 years, and it has been closely related to advancements on computer technology. Evaluation methods and multicriteria decisions include the selection of a set of feasible alternatives, the simultaneous optimization of several objective functions, and a decision-making process and evaluation procedures that must be rational and consistent. The application of a mathematical model of decision-making will help to find the best solution, establishing the mechanisms to facilitate the management of information generated by number of disciplines of knowledge. Those problems in which decision alternatives are finite are called Discrete Multicriteria Decision problems. Such problems are most common in reality and this case scenario will be applied in solving the problem of site selection for storing CO2. Discrete MCDM is used to assess and decide on issues that by nature or design support a finite number of alternative solutions. Recently, Multicriteria Decision Analysis has been applied to hierarchy policy incentives for CCS, to assess the role of CCS, and to select potential areas which could be suitable to store. For those reasons, MCDM have been considered in the monitoring phase of CO2 storage, in order to select suitable technologies which could be techno-economical viable. In this paper, we identify techniques of gas measurements in subsurface which are currently applying in the phase of characterization (pre-injection); MCDM will help decision-makers to hierarchy the most suitable technique which fit the purpose to monitor the specific physic-chemical parameter.

Some advances in extensive bridge monitoring using low cost dynamic characterization

Dynamic measurements will become a standard for bridge monitoring in the near future. This fact will produce an important cost reduction for maintenance. US Administration has a long term intensive research program in order to diminish the estimated current maintenance cost of US$7 billion per year over 20 years. An optimal intervention maintenance program demands a historical dynamical record, as well as an updated mathematical model of the structure to be monitored. In case that a model of the structure is not actually available it is possible to produce it, however this possibility does not exist for missing measurement records from the past. Current acquisition systems to monitor structures can be made more efficient by introducing the following improvements, under development in the Spanish research Project “Low cost bridge health monitoring by ambient vibration tests using wireless sensors”: (a) a complete wireless system to acquire sensor data, (b) a wireless system that permits the localization and the hardware identification of the whole sensor system. The applied localization system has been object of a recent patent, and (c) automatization of the modal identification process, aimed to diminish human intervention. This system is assembled with cheap components and allows the simultaneous use of a large number of sensors at a low placement cost. The engineer’s intervention is limited to the selection of sensor positions, probably based on a preliminary FE analysis. In case of multiple setups, also the position of a number of fixed reference sensors has to be decided. The wireless localization system will obtain the exact coordinates of all these sensors positions. When the selection of optimal positions is difficult, for example because of the lack of a proper FE model, this can be compensated by using a higher number of measuring (also reference) points. The described low cost acquisition system allows the responsible bridge administration to obtain historical dynamic identification records at reasonable costs that will be used in future maintenance programs. Therefore, due to the importance of the baseline monitoring record of a new bridge, a monitoring test just after its construction should be highly recommended, if not compulsory.

Health monitoring of web plastifying dampers subjected to cyclic loading through vibration tests

This article investigates experimentally the application of health monitoring techniques to assess the damage on a particular kind of hysteretic (metallic) damper called web plastifying dampers, which are subjected to cyclic loading. In general terms, hysteretic dampers are increasingly used as passive control systems in advanced earthquake-resistant structures. Nonparametric statistical processing of the signals obtained from simple vibration tests of the web plastifying damper is used here to propose an area index damage. This area index damage is compared with an alternative energy-based index of damage proposed in past research that is based on the decomposition of the load?displacement curve experienced by the damper. Index of damage has been proven to accurately predict the level of damage and the proximity to failure of web plastifying damper, but obtaining the load?displacement curve for its direct calculation requires the use of costly instrumentation. For this reason, the aim of this study is to estimate index of damage indirectly from simple vibration tests, calling for much simpler and cheaper instrumentation, through an auxiliary index called area index damage. Web plastifying damper is a particular type of hysteretic damper that uses the out-of-plane plastic deformation of the web of I-section steel segments as a source of energy dissipation. Four I-section steel segments with similar geometry were subjected to the same pattern of cyclic loading, and the damage was evaluated with the index of damage and area index damage indexes at several stages of the loading process. A good correlation was found between area index damage and index of damage. Based on this correlation, simple formulae are proposed to estimate index of damage from the area index damage.