High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Fast Object Recognition in Noisy Images Using Simulated Annealing

A fast simulated annealing algorithm is developed for automatic object recognition. The normalized correlation coefficient is used as a measure of the match between a hypothesized object and an image. Templates are generated on-line during the search by transforming model images. Simulated annealing reduces the search time by orders of magnitude with respect to an exhaustive search. The algorithm is applied to the problem of how landmarks, for example, traffic signs, can be recognized by an autonomous vehicle or a navigating robot. The algorithm works well in noisy, real-world images of complicated scenes for model images with high information content.

Carbon Nanotube Growth Using Ni Catalyst in Different Layouts

Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates with anodized alumina mask prepared in different methods including 2 step anodization of porous alumina template and interference lithography assisted array of pores. The templates helped to define Ni nanodots inside the pores which in turn catalyzed the growth of carbon nanotubes inside the PECVD system at temperature of 700-750C using mixture of ammonia and acetylene gases. The resulting well-aligned multi-walled carbon nanotubes were further investigated using SEM, TEM and Raman spectroscopy. The size, shape and structure of the grown carbon nanotubes were also discussed.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.

Performance-Driven Microfabrication-Oriented Methodology for MEMS Conceptual Design with Application in Microfluidic Device Design

Performance and manufacturability are two important issues that must be taken into account during MEMS design. Existing MEMS design models or systems follow a process-driven design paradigm, that is, design starts from the specification of process sequence or the customization of foundry-ready process template. There has been essentially no methodology or model that supports generic, high-level design synthesis for MEMS conceptual design. As a result, there lacks a basis for specifying the initial process sequences. To address this problem, this paper proposes a performance-driven, microfabrication-oriented methodology for MEMS conceptual design. A unified behaviour representation method is proposed which incorporates information of both physical interactions and chemical/biological/other reactions. Based on this method, a behavioural process based design synthesis model is proposed, which exploits multidisciplinary phenomena for design solutions, including both the structural components and their configuration for the MEMS device, as well as the necessary substances for the chemical/biological/other reactions. The model supports both forward and backward synthetic search for suitable phenomena. To ensure manufacturability, a strategy of using microfabrication-oriented phenomena as design knowledge is proposed, where the phenomena are developed from existing MEMS devices that have associated MEMS-specific microfabrication processes or foundry-ready process templates. To test the applicability of the proposed methodology, the paper also studies microfluidic device design and uses a micro-pump design for the case study.