Multiple-User Quantum Optical Communication

A fundamental understanding of the information carrying capacity of optical channels requires the signal and physical channel to be modeled quantum mechanically. This thesis considers the problems of distributing multi-party quantum entanglement to distant users in a quantum communication system and determining the ability of quantum optical channels to reliably transmit information. A recent proposal for a quantum communication architecture that realizes long-distance, high-fidelity qubit teleportation is reviewed. Previous work on this communication architecture is extended in two primary ways. First, models are developed for assessing the effects of amplitude, phase, and frequency errors in the entanglement source of polarization-entangled photons, as well as fiber loss and imperfect polarization restoration, on the throughput and fidelity of the system. Second, an error model is derived for an extension of this communication architecture that allows for the production and storage of three-party entangled Greenberger-Horne-Zeilinger states. A performance analysis of the quantum communication architecture in qubit teleportation and quantum secret sharing communication protocols is presented. Recent work on determining the channel capacity of optical channels is extended in several ways. Classical capacity is derived for a class of Gaussian Bosonic channels representing the quantum version of classical colored Gaussian-noise channels. The proof is strongly mo- tivated by the standard technique of whitening Gaussian noise used in classical information theory. Minimum output entropy problems related to these channel capacity derivations are also studied. These single-user Bosonic capacity results are extended to a multi-user scenario by deriving capacity regions for single-mode and wideband coherent-state multiple access channels. An even larger capacity region is obtained when the transmitters use non- classical Gaussian states, and an outer bound on the ultimate capacity region is presented

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.