Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.

Non-linear mechanical behavior of the elastomer polydimethylsiloxane (PDMS) used in the manufacture of microfluidic devices

Polydimethylsiloxane (PDMS) is the elastomer of choice to create a variety of microfluidic devices by soft lithography techniques (eg., [1], [2], [3], [4]). Accurate and reliable design, manufacture, and operation of microfluidic devices made from PDMS, require a detailed characterization of the deformation and failure behavior of the material. This paper discusses progress in a recently-initiated research project towards this goal. We have conducted large-deformation tension and compression experiments on traditional macroscale specimens, as well as microscale tension experiments on thin-film (≈ 50µm thickness) specimens of PDMS with varying ratios of monomer:curing agent (5:1, 10:1, 20:1). We find that the stress-stretch response of these materials shows significant variability, even for nominally identically prepared specimens. A non-linear, large-deformation rubber-elasticity model [5], [6] is applied to represent the behavior of PDMS. The constitutive model has been implemented in a finite-element program [7] to aid the design of microfluidic devices made from this material. As a first attempt towards the goal of estimating the non-linear material parameters for PDMS from indentation experiments, we have conducted micro-indentation experiments using a spherical indenter-tip, and carried out corresponding numerical simulations to verify how well the numerically-predicted P(load-h(depth of indentation) curves compare with the corresponding experimental measurements. The results are encouraging, and show the possibility of estimating the material parameters for PDMS from relatively simple micro-indentation experiments, and corresponding numerical simulations.