Multiple-User Quantum Optical Communication

A fundamental understanding of the information carrying capacity of optical channels requires the signal and physical channel to be modeled quantum mechanically. This thesis considers the problems of distributing multi-party quantum entanglement to distant users in a quantum communication system and determining the ability of quantum optical channels to reliably transmit information. A recent proposal for a quantum communication architecture that realizes long-distance, high-fidelity qubit teleportation is reviewed. Previous work on this communication architecture is extended in two primary ways. First, models are developed for assessing the effects of amplitude, phase, and frequency errors in the entanglement source of polarization-entangled photons, as well as fiber loss and imperfect polarization restoration, on the throughput and fidelity of the system. Second, an error model is derived for an extension of this communication architecture that allows for the production and storage of three-party entangled Greenberger-Horne-Zeilinger states. A performance analysis of the quantum communication architecture in qubit teleportation and quantum secret sharing communication protocols is presented. Recent work on determining the channel capacity of optical channels is extended in several ways. Classical capacity is derived for a class of Gaussian Bosonic channels representing the quantum version of classical colored Gaussian-noise channels. The proof is strongly mo- tivated by the standard technique of whitening Gaussian noise used in classical information theory. Minimum output entropy problems related to these channel capacity derivations are also studied. These single-user Bosonic capacity results are extended to a multi-user scenario by deriving capacity regions for single-mode and wideband coherent-state multiple access channels. An even larger capacity region is obtained when the transmitters use non- classical Gaussian states, and an outer bound on the ultimate capacity region is presented

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.