4 resultados para network flow model
em Massachusetts Institute of Technology
Resumo:
Most logistics network design models assume exogenous customer demand that is independent of the service time or level. This paper examines the benefits of segmenting demand according to lead-time sensitivity of customers. To capture lead-time sensitivity in the network design model, we use a facility grouping method to ensure that the different demand classes are satisfied on time. In addition, we perform a series of computational experiments to develop a set of managerial insights for the network design decision making process.
Resumo:
Stock markets employ specialized traders, market-makers, designed to provide liquidity and volume to the market by constantly supplying both supply and demand. In this paper, we demonstrate a novel method for modeling the market as a dynamic system and a reinforcement learning algorithm that learns profitable market-making strategies when run on this model. The sequence of buys and sells for a particular stock, the order flow, we model as an Input-Output Hidden Markov Model fit to historical data. When combined with the dynamics of the order book, this creates a highly non-linear and difficult dynamic system. Our reinforcement learning algorithm, based on likelihood ratios, is run on this partially-observable environment. We demonstrate learning results for two separate real stocks.
Resumo:
A lubrication-flow model for a free film in a corner is presented. The model, written in the hyperbolic coordinate system ξ = x² – y², η = 2xy, applies to films that are thin in the η direction. The lubrication approximation yields two coupled evolution equations for the film thickness and the velocity field which, to lowest order, describes plug flow in the hyperbolic coordinates. A free film in a corner evolving under surface tension and gravity is investigated. The rate of thinning of a free film is compared to that of a film evolving over a solid substrate. Viscous shear and normal stresses are both captured in the model and are computed for the entire flow domain. It is shown that normal stress dominates over shear stress in the far field, while shear stress dominates close to the corner.
Resumo:
The MOS transistor physical model as described in [3] is presented here as a network model. The goal is to obtain an accurate model, suitable for simulation, free from certain problems reported in the literature [13], and conceptually as simple as possible. To achieve this goal the original model had to be extended and modified. The paper presents the derivation of the network model from physical equations, including the corrections which are required for simulation and which compensate for simplifications introduced in the original physical model. Our intrinsic MOS model consists of three nonlinear voltage-controlled capacitors and a dependent current source. The charges of the capacitors and the current of the current source are functions of the voltages $V_{gs}$, $V_{bs}$, and $V_{ds}$. The complete model consists of the intrinsic model plus the parasitics. The apparent simplicity of the model is a result of hiding information in the characteristics of the nonlinear components. The resulted network model has been checked by simulation and analysis. It is shown that the network model is suitable for simulation: It is defined for any value of the voltages; the functions involved are continuous and satisfy Lipschitz conditions with no jumps at region boundaries; Derivatives have been computed symbolically and are available for use by the Newton-Raphson method. The model"s functions can be measured from the terminals. It is also shown that small channel effects can be included in the model. Higher frequency effects can be modeled by using a network consisting of several sections of the basic lumped model. Future plans include a detailed comparison of the network model with models such as SPICE level 3 and a comparison of the multi- section higher frequency model with experiments.