4 resultados para multi-scale

em Massachusetts Institute of Technology


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We present a novel ridge detector that finds ridges on vector fields. It is designed to automatically find the right scale of a ridge even in the presence of noise, multiple steps and narrow valleys. One of the key features of such ridge detector is that it has a zero response at discontinuities. The ridge detector can be applied to scalar and vector quantities such as color. We also present a parallel perceptual organization scheme based on such ridge detector that works without edges; in addition to perceptual groups, the scheme computes potential focus of attention points at which to direct future processing. The relation to human perception and several theoretical findings supporting the scheme are presented. We also show results of a Connection Machine implementation of the scheme for perceptual organization (without edges) using color.

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The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

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The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

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This thesis describes a new representation for two-dimensional round regions called Local Rotational Symmetries. Local Rotational Symmetries are intended as a companion to Brady's Smoothed Local Symmetry Representation for elongated shapes. An algorithm for computing Local Rotational Symmetry representations at multiple scales of resolution has been implemented and results of this implementation are presented. These results suggest that Local Rotational Symmetries provide a more robustly computable and perceptually accurate description of round regions than previous proposed representations. In the course of developing this representation, it has been necessary to modify the way both Smoothed Local Symmetries and Local Rotational Symmetries are computed. First, grey-scale image smoothing proves to be better than boundary smoothing for creating representations at multiple scales of resolution, because it is more robust and it allows qualitative changes in representations between scales. Secondly, it is proposed that shape representations at different scales of resolution be explicitly related, so that information can be passed between scales and computation at each scale can be kept local. Such a model for multi-scale computation is desirable both to allow efficient computation and to accurately model human perceptions.