Shape-Time Photography

We introduce a new method to describe, in a single image, changes in shape over time. We acquire both range and image information with a stationary stereo camera. From the pictures taken, we display a composite image consisting of the image data from the surface closest to the camera at every pixel. This reveals the 3-d relationships over time by easy-to-interpret occlusion relationships in the composite image. We call the composite a shape-time photograph. Small errors in depth measurements cause artifacts in the shape-time images. We correct most of these using a Markov network to estimate the most probable front surface, taking into account the depth measurements, their uncertainties, and layer continuity assumptions.

Robust and Efficient 3D Recognition by Alignment

Alignment is a prevalent approach for recognizing 3D objects in 2D images. A major problem with current implementations is how to robustly handle errors that propagate from uncertainties in the locations of image features. This thesis gives a technique for bounding these errors. The technique makes use of a new solution to the problem of recovering 3D pose from three matching point pairs under weak-perspective projection. Furthermore, the error bounds are used to demonstrate that using line segments for features instead of points significantly reduces the false positive rate, to the extent that alignment can remain reliable even in cluttered scenes.

Generating Compliant Motion of Objects with an Articulated Hand

The flexibility of the robot is the key to its success as a viable aid to production. Flexibility of a robot can be explained in two directions. The first is to increase the physical generality of the robot such that it can be easily reconfigured to handle a wide variety of tasks. The second direction is to increase the ability of the robot to interact with its environment such that tasks can still be successfully completed in the presence of uncertainties. The use of articulated hands are capable of adapting to a wide variety of grasp shapes, hence reducing the need for special tooling. The availability of low mass, high bandwidth points close to the manipulated object also offers significant improvements I the control of fine motions. This thesis provides a framework for using articulated hands to perform local manipulation of objects. N particular, it addresses the issues in effecting compliant motions of objects in Cartesian space. The Stanford/JPL hand is used as an example to illustrate a number of concepts. The examples provide a unified methodology for controlling articulated hands grasping with point contacts. We also present a high-level hand programming system based on the methodologies developed in this thesis. Compliant motion of grasped objects and dexterous manipulations can be easily described in the LISP-based hand programming language.

Modeling, Estimation, and Control of Robot-Soil Interactions

This thesis presents the development of hardware, theory, and experimental methods to enable a robotic manipulator arm to interact with soils and estimate soil properties from interaction forces. Unlike the majority of robotic systems interacting with soil, our objective is parameter estimation, not excavation. To this end, we design our manipulator with a flat plate for easy modeling of interactions. By using a flat plate, we take advantage of the wealth of research on the similar problem of earth pressure on retaining walls. There are a number of existing earth pressure models. These models typically provide estimates of force which are in uncertain relation to the true force. A recent technique, known as numerical limit analysis, provides upper and lower bounds on the true force. Predictions from the numerical limit analysis technique are shown to be in good agreement with other accepted models. Experimental methods for plate insertion, soil-tool interface friction estimation, and control of applied forces on the soil are presented. In addition, a novel graphical technique for inverting the soil models is developed, which is an improvement over standard nonlinear optimization. This graphical technique utilizes the uncertainties associated with each set of force measurements to obtain all possible parameters which could have produced the measured forces. The system is tested on three cohesionless soils, two in a loose state and one in a loose and dense state. The results are compared with friction angles obtained from direct shear tests. The results highlight a number of key points. Common assumptions are made in soil modeling. Most notably, the Mohr-Coulomb failure law and perfectly plastic behavior. In the direct shear tests, a marked dependence of friction angle on the normal stress at low stresses is found. This has ramifications for any study of friction done at low stresses. In addition, gradual failures are often observed for vertical tools and tools inclined away from the direction of motion. After accounting for the change in friction angle at low stresses, the results show good agreement with the direct shear values.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle wafer. The original Si wafer and the relaxed SiGe buffer are subsequently removed, thereby transferring a strained-Si layer directly to Si substrate without intermediate SiGe or oxide layers. Complete removal of Ge from the structure was confirmed by cross-sectional transmission electron microscopy as well as secondary ion mass spectrometry. A plan-view transmission electron microscopy study of the strained-Si/Si interface reveals that the lattice-mismatch between the layers is accommodated by an orthogonal array of edge dislocations. This misfit dislocation array, which forms upon bonding, is geometrically necessary and has an average spacing of approximately 40nm, in excellent agreement with established dislocation theory. To our knowledge, this is the first study of a chemically homogeneous, yet lattice-mismatched, interface.